ES1A - ES1M SENSITRON SEMICONDUCTOR 1.0A SURFACE MOUNT SUPER FAST RECTIFIER Data Sheet 2621, Rev. A Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss Super-Fast Recovery Time Plastic Case Material has UL Flammability Classification Rating 94V-O B A F C H Mechanical Data SMA/DO-214AC Min Max Min Max A 2.50 2.90 0.098 0.114 B 4.00 4.60 0.157 0.181 C 1.40 1.60 0.055 0.063 D 0.152 0.305 0.006 0.012 Dim Case: Low Profile Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) E 4.80 5.28 0.189 0.208 F 2.00 2.44 0.079 0.096 G 0.051 0.203 0.002 0.008 H 0.76 0.060 1.52 0.030 In mm Maximum Ratings and Electrical Characteristics Characteristic RMS Reverse Voltage Average Rectified Output Current In inch @TA=25C unless otherwise specified Symbol ES1A ES1B ES1C ES1D ES1E ES1G Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage ES1J ES1K ES1M Unit VRRM VRWM VR 50 100 150 200 300 400 600 800 1000 V VR(RMS) 35 70 105 140 210 280 420 560 700 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM @TA = 25C @TA = 100C IRM Peak Reverse Current At Rated DC Blocking Voltage @TL = 75C G E 0.975 1.35 1.60 5.0 500 A Reverse Recovery Time (Note 1) trr Typical Junction Capacitance (Note 2) Cj 45 pF RJL 35 K/W Tj, TSTG -50 to +150 C Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 50 V 60 100 nS Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A, 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 2 3. Mounted on P.C. Board with 8.0mm land area. * ! ! !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0* Single phase half wave Resistive or Inductive load 0.75 0.50 Tj = 25C Pulse width = 300s 10 ES1A - ES1D 0.25 ES1E - ES1G 1.0 ES1J-ES1M 0.1 0 0.01 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 150 175 T ,LEAD TEMPERATURE VF, INSTANTANEOUS FORWARD VOLTAGE (V) ( C) L Fig. 2 Typical Forward Characteristics Fig. 1 Forward Current Derating Curve 100 30 Pulse 8.3 ms single half-sine-wave width Tj = 25C f = 1.0MHz (JEDEC method) 20 Cj, CAPACITANCE (pF) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) 21, , A 1.00 IFSM, PEAK FORWARD SURGE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) M 10 10 1 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 1 100 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr +0.5A 50 NI (Non-inductive) 10 NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0 NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit * ! ! !!"#$* * % & '(&)*+,,---. & ./0*12&%# %3 & ./0* SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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