N-Channel QFET(R) MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. * 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, ID = 6.5 A * Low Gate Charge (Typ. 43 nC) * Low Crss (Typ. 20 pF) * 100% Avalanche Tested D G D S TO-220 Absolute Maximum Ratings T Symbol VDSS ID G G D S TO-220F = 25 C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQP13N50C - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS IAR EAR dv/dt PD TJ, TSTG TL S o C - Pulsed (Note 1) FQPF13N50C 500 Units V 13 13 * 8 8* A A 52 52 * A 30 V Single Pulsed Avalanche Energy (Note 2) 860 mJ Avalanche Current (Note 1) 13 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 19.5 4.5 -55 to +150 mJ V/ns W W/C C 300 C (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 195 1.56 48 0.39 * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case, Max. RJS Thermal Resistance, Case-to-Sink, Typ. RJA Thermal Resistance, Junction-to-Ambient, Max. (c)2003 Semiconductor Components Industries, LLC. September-2017, Rev. 3 FQP13N50C 0.64 FQPF13N50C 2.58 Units C/W 0.5 -- C/W 62.5 62.5 C/W Publication Order Number: FQP13N50C-F105/D FQP13N50C / FQPF13N50C -- N-Channel QFET(R) MOSFET FQP13N50C / FQPF13N50C Part Number FQP13N50C-F105 FQPF13N50C-F105 Top Mark FQP13N50C Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FQPF13N50C TO-220F Tube N/A N/A 50 units Electrical Characteristics T Symbol o C = 25 C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 500 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.5 IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 A VDS = 400 V, TC = 125C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.5 A -- 0.39 0.48 gFS Forward Transconductance VDS = 40 V, ID = 6.5 A -- 15 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1580 2055 pF -- 180 235 pF -- 20 25 pF ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 13 A, RG = 25 (Note 4) VDS = 400 V, ID = 13 A, VGS = 10 V (Note 4) -- 25 60 -- 100 210 ns -- 130 270 ns -- 100 210 ns -- 43 56 nC -- 7.5 -- nC -- 18.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A ISM -- -- 52 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 13 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 410 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 13 A, dIF / dt = 100 A/s -- 4.5 -- C 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 6 mH, IAS = 13 A, VDD = 50 V, RG = 25 , starting TJ = 25oC. 3. ISD 13 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQP13N50C / FQPF13N50C -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : .5 V Top : ID, Drain Current [A] 1 10 o 150 C ID, Drain Current [A] 1 10 0 o -55 C o 25 C 0 10 10 Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250 s Pulse Test -1 -1 10 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 VGS = 10V IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 1.5 1.0 VGS = 20V 0.5 10 0 10 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 Note : TJ = 25 -1 0 5 10 15 20 25 30 10 35 0.2 0.4 ID, Drain Current [A] 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V 10 VDS = 250V VGS, Gate-Source Voltage [V] 2500 Ciss Capacitance [pF] 2000 Coss 1500 Notes ; 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 VDS = 400V 8 6 4 2 Note : ID = 13A 0 -1 10 0 0 10 0 1 10 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics www.onsemi.com 3 Figure 6. Gate Charge Characteristics FQP13N50C / FQPF13N50C -- N-Channel QFET(R) MOSFET ! (continued) 1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 6.5 A 0.5 0.0 -100 200 0 100 150 200 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 2 10 Operation in This Area is Limited by R DS(on) 10 10 s 10 s 100 s 100 s ID, Drain Current [A] 1 1 ms 10 ms 100 ms DC 1 10 0 10 Notes : 10 1 ms 10 ms 100 ms DC 0 10 Notes : -1 10 o 1. TC = 25 C o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -1 10 -2 0 1 10 2 10 3 10 10 10 12 10 8 6 4 2 75 100 2 10 3 10 Figure 9-2. Maximum Safe Operating Area for FQPF13N50C 14 50 1 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP13N50C 0 25 0 10 VDS, Drain-Source Voltage [V] ID, Drain Current [A] 50 TJ, Junction Temperature [ C] 2 ID, Drain Current [A] -50 o o 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature www.onsemi.com 4 FQP13N50C / FQPF13N50C -- N-Channel QFET(R) MOSFET ! ZJC(t), Thermal Response [oC/W] 10 (continued) 0 D = 0 .5 0 .2 10 N o te s : 1 . Z J C ( t) = 0 .6 4 /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) -1 0 .1 0 .0 5 0 .0 2 0 .0 1 10 -2 PDM s in g le p u ls e t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ZJC(t), Thermal Response [oC/W] Figure 11-1. Transient Thermal Response Curve for FQP13N50C 10 D = 0 .5 0 0 .2 N o te s : 1 . Z J C (t) = 2 .5 8 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM t1 10 10 t2 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF13N50C www.onsemi.com 5 FQP13N50C / FQPF13N50C -- N-Channel QFET(R) MOSFET ! FQP13N50C / FQPF13N50C -- N-Channel QFET(R) MOSFET 50K 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FQP13N50C / FQPF13N50C -- N-Channel QFET(R) MOSFET DUT FQP13N50C / FQPF13N50C -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 FQP13N50C / FQPF13N50C -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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