PBSS5160U - Philips Semiconductors / NXP Semiconductors

1. Product proﬁle

1.1 General description

PNP low VCEsat (BISS) transistor in a SOT323 (SC-70) plastic package.

NPN complement: PBSS4160U.

1.2 Features

■Low collector-emitter saturation voltage VCEsat

■High collector current capability IC and ICM

■High efﬁciency leading to less heat generation

■Reduces printed-circuit board area required

■Cost effective replacement of medium power transistors BCP52 and BCX52.

1.3 Applications

■Major application segments

◆Automotive

◆Telecom infrastructure

◆Industrial

■Power management

◆DC-to-DC conversion

◆Supply line switching

■Peripheral driver

◆Inductive load driver (e.g. relays, buzzers and motors)

◆Driver in low supply voltage applications (e.g. lamps and LEDs).

1.4 Quick reference data

PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

Rev. 02 — 09 August 2004 Objective data sheet

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage - - −60 V

ICcollector current (DC) - - −1A

ICM peak collector current - - −2A

RCEsat equivalent on-resistance - - 330 mΩ

Objective data sheet Rev. 02 — 09 August 2004 2 of 12

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

[1] * = p: made in Hong Kong.

* = t: made in Malaysia.

* = W: made in China.

Table 2: Discrete pinning

Pin Description Simpliﬁed outline Symbol

1 base

2 emitter

3 collector

sot323_so

sym013

Table 3: Ordering information

Type number Package

Name Description Version

PBSS5160U SC-70 plastic surface mounted package; 3 leads SOT323

Table 4: Marking

Type number Marking code[1]

PBSS5160U 53*

Objective data sheet Rev. 02 — 09 August 2004 3 of 12

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

5. Limiting values

[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.

[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for

collector 1 cm2.

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - −80 V

VCEO collector-emitter

voltage open base - −60 V

VEBO emitter-base voltage open collector - −5V

ICcollector current (DC) [1] -−0.8 A

[2] -−1A

ICM peak collector current t = 1 ms or limited by

Tj(max)

-−2A

IBbase current (DC) - −300 mA

IBM peak base current tp≤ 300 µs; δ≤ 0.02 - −1A

Ptot total power dissipation Tamb ≤ 25 °C[1] - 250 mW

[2] - 350 mW

Tjjunction temperature - 150 °C

Tamb operating ambient

temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

FR4 PCB; standard footprint.

Fig 1. Power derating curve.

Tamb (°C)

0 16012040 80

006aaa146

100

200

300

Ptot

(mW)

Objective data sheet Rev. 02 — 09 August 2004 4 of 12

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

6. Thermal characteristics

[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.

[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-a) thermal resistance from junction to ambient in free air [1] 500 K/W

[2] 357 K/W

Mounted on FR4 PCB; standard footprint.

(1) δ = 1.

(2) δ = 0.75.

(3) δ = 0.5.

(4) δ = 0.33.

(5) δ = 0.2.

(6) δ = 0.1.

(7) δ = 0.05.

(8) δ = 0.02.

(9) δ = 0.01.

(10) δ = 0.

Fig 2. Transient thermal impedance as a function of pulse time; typical values.

006aaa147

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth

(K/W)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

Objective data sheet Rev. 02 — 09 August 2004 5 of 12

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp≤ 300 µs; δ≤ 0.02.

Table 7: Characteristics

amb

= 25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off current VCB = −60 V; IE = 0 A - - −100 nA

VCB = −60 V; IE = 0 A; Tj= 150 °C--−50 µA

ICES collector-emitter cut-off

current VCE = −60 V; VBE = 0 V - - −100 nA

IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA

hFE DC current gain VCE = −5 V; IC = −1 mA 200 350 -

VCE = −5 V; IC = −500 mA [1] 150 250 -

VCE = −5 V; IC = −1 A [1] 100 160 -

VCEsat collector-emitter saturation

voltage IC = −100 mA; IB = −1 mA - −110 −160 mV

IC = −500 mA; IB = −50 mA - −130 −175 mV

IC = −1 A; IB = −100 mA [1] -−250 −330 mV

VBEsat base-emitter saturation

voltage IC = −1 A; IB = −50 mA - −0.95 −1.1 V

RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA [1] - 250 330 mΩ

VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A - −0.82 −0.9 V

fTtransition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 220 - MHz

Cccollector capacitance VCB = −10 V; IE = Ie = 0 A; f = 1 MHz - 9 15 pF

Objective data sheet Rev. 02 — 09 August 2004 6 of 12

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

VCE = −5V.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

VCE = −5V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

Fig 3. DC current gain as a function of collector

current; typical values. Fig 4. Base-emitter voltage as a function of collector

current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

IC/IB = 10.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Fig 5. Collector-emitter saturation voltage as a

function of collector current; typical values. Fig 6. Collector-emitter saturation voltage as a

function of collector current; typical values.

001aaa719

200

400

600

hFE

IC (mA)

−10−1−104

−103

−1−102

−10

(2)

(1)

(3)

001aaa717

−0.4

−0.8

−1.2

VBE

(V)

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2)

(3)

001aab118

−1

−10−1

−10

VCEsat

(V)

−10−2

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2)

(3)

001aab130

−10−1

−10−2

−1

VCEsat

(V)

−10−3

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2)

(3)

Objective data sheet Rev. 02 — 09 August 2004 7 of 12

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

Tamb = 25 °C.

(1) IC/IB = 100.

(2) IC/IB = 50.

(3) IC/IB = 10.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values. Fig 8. Base-emitter saturation voltage as a function of

collector current; typical values.

001aab129

−1

−10−1

−10

VCEsat

(V)

−10−2

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2)

(3)

001aaa723

−0.4

−0.8

−1.2

VBEsat

(V)

IC (mA)

−10−1−104

−103

−1−102

−10

(3)

(2)

(1)

Objective data sheet Rev. 02 — 09 August 2004 8 of 12

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

Tamb = 25 °C.

(1) IB = −40 mA.

(2) IB = −36 mA.

(3) IB = −32 mA.

(4) IB = −28 mA.

(5) IB = −24 mA.

(6) IB = −20 mA.

(7) IB = −16 mA.

(8) IB = −12 mA.

(9) IB = −8 mA.

(10) IB = −4 mA.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Fig 9. Collector current as a function of

collector-emitter voltage; typical values. Fig 10. Equivalent on-resistance as a function of

collector current; typical values.

VCE (V)

0−5−4−2−3−1

001aaa716

−0.8

−1.2

−0.4

−1.6

−2

(A)

(1)(2)(3)(4)(5)

(10)

(9)

(6)

(9)

(8)

(7)

(6)

001aaa720

IC (mA)

−10−1−104

−103

−1−102

−10

102

103

RCEsat

(Ω)

10−1

(2)

(1)

(3)

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

Objective data sheet Rev. 02 — 09 August 2004 9 of 12

8. Package outline

Fig 11. Package outline.

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT323

97-02-28

Objective data sheet Rev. 02 — 09 August 2004 10 of 12

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

9. Revision history

Table 8: Revision history

Document ID Release date Data sheet status Change notice Order number Supersedes

PBSS5160U_2 20040809 Objective data sheet - 9397 750 13265 PBSS5160U_1

Modiﬁcations: •Table 1: values of IC and ICM amended

•Table 5: values of IC amended

•Table 7: typical values of hFE and VCEsat added (were <tbd>)

•Figs 1,2,3,4,5,6,7,8,9 and 10 added.

PBSS5160U_1 20040503 Objective data sheet - 9397 750 12885 -

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

Objective data sheet Rev. 02 — 09 August 2004 11 of 12

10. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

12. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights. Date of release: 09 August 2004

Document order number: 9397 750 13265

Published in The Netherlands

Philips Semiconductors PBSS5160U

60 V, 1 A PNP low VCEsat (BISS) transistor

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information . . . . . . . . . . . . . . . . . . . . 11