SE1470 AlGaAs Infrared Emitting Diode FEATURES * Compact metal can coaxial package * 24 (nominal) beam angle * 880 nm wavelength * Higher output power than GaAs at equivalent drive currents * Wide operating temperature range (- 55C to +125C) * Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1470-XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals 0.005(0.12) 2 plc decimals 0.020(0.51) SE1470-XXX .091(2.26) CATHODE (CASE) ANODE .020(0.51) DIA .062(1.57) DIA .079(2.01) .076(1.93) DIA .010(0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1470-XXXL .091(2.26) .020 (0.51) DIA CATHODE ~ ~ .079(2.01) .076(1.93) DIA ANODE .020 (0.51) DIA ~ ~ .062(1.57) DIA .010(0.25) ~ ~ .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) TYPICAL MIN DIM_001b.ds4 12 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE1470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) 50 mA 75 mW [A] -55C to 125C -65C to 150C 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.71 mW/C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 13 SE1470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 gra_007.ds4 Normalized radiant intensity Relative intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 Radiant Intensity vs Forward Current 0.0 0.0 +10 +20 +30 +40 4.0 gra_201.ds4 1.6 1.5 1.5 1.4 1.3 1.2 1.1 10 20 30 40 50 1.2 IF = 20 mA 1.1 -25 Fig. 6 gra_011.ds4 Normalized light current Relative intensity 25 50 75 100 125 Coupling Characteristics with SD1440 gra_012.ds4 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.8 0.6 0.4 0.2 0.0 800 840 880 920 960 1000 0.0 Wavelength - nm 14 0 Temperature - C Spectral Bandwidth 0.0 760 gra_202.ds4 1.3 Forward current - mA Fig. 5 20.0 1.4 1.0 -50 1.0 0 16.0 12.0 Forward Voltage vs Temperature 1.6 Forward voltage - V Forward voltage - V Fig. 4 Forward Voltage vs Forward Current 8.0 Forward current - mA Angular displacement - degrees Fig. 3 gra_008.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Lens-to-lens seperation - inches h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE1470 AlGaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature gra_130.ds4 Relative power output 10 5.0 IF = 40 mA IF = 30 mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50 +75 +100 TA - Free-air temperature - (C) All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 15