STP62NS04Z N-channel clamped 12.5 m, 62 A, TO-220 fully protected MESH OVERLAYTM Power MOSFET Features Type VDSS RDS(on) max ID STP62NS04Z Clamped < 0.015 62 A 3 100% avalanche tested 1 Low capacitance and gate charge 175 C maximum junction temperature 2 TO-220 Application Switching applications Description Figure 1. Internal schematic diagram D(2) Fully clamped MOSFET is produced by using ST's most advanced MESH OVERLAYTM process based on strip layout. The inherent benefits of this new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operating conditions such as those encountered in the automotive environment. It is also recommended for any other application requiring extra ruggedness. G(1) S(3) Table 1. SC12470 Device summary Order code Marking Package Packaging STP62NS04Z P62NS04Z TO-220 Tube May 2009 Doc ID 9859 Rev 6 1/12 www.st.com 12 Contents STP62NS04Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 9859 Rev 6 STP62NS04Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) Clamped V VGS Gate-source voltage Clamped V ID Drain current (continuous) at TC = 25 C 62 A ID Drain current (continuous) at TC=100 C 37.5 A IDG Drain gate current (continuous) 50 mA IGS Gate sourcecurrent (continuous) 50 mA Drain current (pulsed) 248 A Total dissipation at TC = 25 C 110 W Derating factor 0.74 W/C 8 V/ns 500 mJ 8 V -55 to 175 C Value Unit IDM (1) PTOT (2) dv/dt EAS (3) VESD TJ Tstg Peak diode recovery voltage slope Single pulse avalanche energy ESD (HBM - C = 100 pF, R = 1.5 k) Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD 40 A, di/dt 100 A/s, VDD V(BR)DSS, Tj TJMAX 3. Starting TJ = 25 C, ID = 20 A, VDD = 20 V Table 3. Symbol Thermal data Parameter Rthj-c Thermal resistance junction-casemax 1.36 C/W Rthj-a Thermal resistance junction-ambient max 62.5 C/W Tl Maximum lead temperature for soldering purpose 300 C Doc ID 9859 Rev 6 3/12 Electrical characteristics 2 STP62NS04Z Electrical characteristics (TCASE=25 C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 16 V 10 A IGSS Gate body leakage current (VDS = 0) VGS = 10 V 10 A VGSS Gate-source breakdown voltage IGS = 100 A 18 VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A 2 RDS(on) Static drain-source on resistance VGS = 10 V, ID = 30 A V(BR)DSS Table 5. Symbol 33 V V 4 V 12.5 15 m Min. Typ. Max. Unit Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 15 V, ID = 30 A - 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 1330 420 135 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 20 V, ID = 40 A VGS =10 V 47 - 34 10 11.5 nC nC nC Min. Typ. Max. Unit - ns ns ns ns - ns ns ns 1. Pulsed: pulse duration=300s, duty cycle 1.5% Table 6. Symbol 4/12 Switching times Parameter Test conditions td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 20 V, ID= 20 A, RG=4.7 , VGS = 10 V Figure 14 on page 8 - 13 104 41 42 tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time Vclamp = 30 V, ID = 40 A RG = 4.7 , VGS = 10 V Figure 14 on page 8 - 30 54 90 Doc ID 9859 Rev 6 STP62NS04Z Electrical characteristics Table 7. Symbol ISD Parameter Test conditions Min Typ. Max Unit Source-drain current - 62 A (1) Source-drain current (pulsed) - 248 A (2) Forward on voltage ISD = 62 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40 A, di/dt = 100 A/s, VDD = 20 V, TJ = 150 C Figure 16 on page 8 - ISDM VSD Source drain diode trr Qrr IRRM 45 65 2.9 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Doc ID 9859 Rev 6 5/12 Electrical characteristics STP62NS04Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characterisics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 Doc ID 9859 Rev 6 STP62NS04Z Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature Doc ID 9859 Rev 6 7/12 Test circuits 3 STP62NS04Z Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform V(BR)DSS VD IDM ID VDD VDD AM01472v1 8/12 Doc ID 9859 Rev 6 AM01471v1 STP62NS04Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 9859 Rev 6 9/12 Package mechanical data STP62NS04Z TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 10/12 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 Doc ID 9859 Rev 6 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.147 0.104 0.151 0.116 STP62NS04Z 5 Revision history Revision history Table 8. Document revision history Date Revision Changes 21-Jun-2004 2 Preliminary datasheet 22-Aug-2005 3 Complete document with curves 21-Jan-2006 4 New ECOPAK label 02-Oct-2006 5 New template, no content change 14-May-2009 6 Updated scheme in Figure 1 Doc ID 9859 Rev 6 11/12 STP62NS04Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 9859 Rev 6