May 2009 Doc ID 9859 Rev 6 1/12
12
STP62NS04Z
N-channel clamped 12.5 mΩ, 62 A, TO-220
fully protected MESH OVERLAY™ Power MOSFET
Features
■100% avalanche tested
■Low capacitance and gate charge
■175 °C maximum junction temperature
Application
■Switching applications
Description
Fully clamped MOSFET is produced by using
ST's most advanced MESH OVERLAY™ process
based on strip layout. The inherent benefits of this
new technology coupled with the extra clamping
capabilities make this product particularly suitable
for the harshest operating conditions such as
those encountered in the automotive
environment. It is also recommended for any
other application requiring extra ruggedness.
Figure 1. Internal schematic diagram
Type VDSS
RDS(on)
max ID
STP62NS04Z Clamped < 0.015 Ω62 A
123
TO-220
D(2)
G(1)
S(3)SC12470
Table 1. Device summary
Order code Marking Package Packaging
STP62NS04Z P62NS04Z TO-220 Tube
www.st.com
Contents STP62NS04Z
2/12 Doc ID 9859 Rev 6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP62NS04Z Electrical ratings
Doc ID 9859 Rev 6 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) Clamped V
VGS Gate-source voltage Clamped V
ID Drain current (continuous) at TC = 25 °C 62 A
IDDrain current (continuous) at TC=100 °C 37.5 A
IDG Drain gate current (continuous) ± 50 mA
IGS Gate sourcecurrent (continuous) ± 50 mA
IDM(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 248 A
PTOT Total dissipation at TC = 25 °C 110 W
Derating factor 0.74 W/°C
dv/dt (2)
2. ISD ≤ 40 A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Peak diode recovery voltage slope 8 V/ns
EAS (3)
3. Starting TJ = 25 °C, ID = 20 A, VDD = 20 V
Single pulse avalanche energy 500 mJ
VESD ESD (HBM - C = 100 pF, R = 1.5 kΩ)8V
TJ
Tstg
Operating junction temperature
Storage temperature -55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-c Thermal resistance junction-casemax 1.36 °C/W
Rthj-a Thermal resistance junction-ambient max 62.5 °C/W
Tl
Maximum lead temperature for soldering
purpose 300 °C
Electrical characteristics STP62NS04Z
4/12 Doc ID 9859 Rev 6
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 1 mA, VGS= 0 33 V
IDSS
Zero gate voltage drain
current (VGS = 0) VDS = 16 V 10 µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±10 V 10 µA
VGSS
Gate-source
breakdown voltage IGS = 100 µA 18 V
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 30 A 12.5 15 mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS = 15 V, ID = 30 A - 20 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f = 1 MHz,
VGS = 0 -
1330
420
135
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 20 V, ID = 40 A
VGS =10 V -
34
10
11.5
47 nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 20 V, ID= 20 A,
RG=4.7 Ω, VGS = 10 V
Figure 14 on page 8
-
13
104
41
42
-
ns
ns
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Vclamp = 30 V, ID = 40 A
RG=4.7 Ω, VGS = 10 V
Figure 14 on page 8
-
30
54
90
-
ns
ns
ns
STP62NS04Z Electrical characteristics
Doc ID 9859 Rev 6 5/12
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current - 62 A
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 248 A
VSD(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage ISD = 62 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A,
di/dt = 100 A/µs,
VDD = 20 V, TJ = 150 °C
Figure 16 on page 8
-
45
65
2.9
ns
nC
A
Electrical characteristics STP62NS04Z
6/12 Doc ID 9859 Rev 6
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characterisics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
STP62NS04Z Electrical characteristics
Doc ID 9859 Rev 6 7/12
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs temperature
Test circuits STP62NS04Z
8/12 Doc ID 9859 Rev 6
3 Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
STP62NS04Z Package mechanical data
Doc ID 9859 Rev 6 9/12
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Package mechanical data STP62NS04Z
10/12 Doc ID 9859 Rev 6
TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.480.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
STP62NS04Z Revision history
Doc ID 9859 Rev 6 11/12
5 Revision history
Table 8. Document revision history
Date Revision Changes
21-Jun-2004 2 Preliminary datasheet
22-Aug-2005 3 Complete document with curves
21-Jan-2006 4 New ECOPAK label
02-Oct-2006 5 New template, no content change
14-May-2009 6 Updated scheme in Figure 1
STP62NS04Z
12/12 Doc ID 9859 Rev 6
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