STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features * Maximum junction temperature: TJ = 175 C TAB * Tail-less switching off * VCE(sat) = 1.85 V (typ.) @ IC = 80 A * Tight parameters distribution 2 3 3 1 2 1 * Safe paralleling * Low thermal resistance * Very fast soft recovery antiparallel diode TO-247 TO-3P Applications Figure 1. Internal schematic diagram C (2 or TAB) * Photovoltaic inverters * Uninterruptible power supply * Welding * Power factor correction * Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGW80V60DF GW80V60DF TO-247 Tube STGWT80V60DF GWT80V60DF TO-3P Tube January 2014 This is information on a product in full production. DocID024362 Rev 2 1/18 www.st.com 18 Contents STGW80V60DF, STGWT80V60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DocID024362 Rev 2 STGW80V60DF, STGWT80V60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 600 V (1) IC Continuous collector current at TC = 25 C IC Continuous collector current at TC = 100 C 80 A ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage 20 V 120 (1) A IF Continuous forward current at TC = 25 C IF Continuous forward current at TC = 100 C 80 A IFP(2) Pulsed forward current 360 A PTOT Total dissipation at TC = 25 C 469 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C Value Unit TJ 120 A 1. Current level is limited by bond wires 2. Pulse width limited by maximum junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.32 C/W RthJC Thermal resistance junction-case diode 0.66 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID024362 Rev 2 3/18 Electrical characteristics 2 STGW80V60DF, STGWT80V60DF Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF 4/18 Unit V 1.85 VGE = 15 V, IC = 80 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 80 A TJ = 175 C Forward on-voltage Max. 600 VGE = 15 V, IC = 80 A VCE(sat) Typ. 2.3 2.15 V 2.4 IF = 80 A 1.9 IF = 80 A TJ = 125 C 1.6 V IF = 80 A TJ = 175 C 1.5 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 6 V 7 V VCE = 600 V 100 A VGE = 20 V 250 nA DocID024362 Rev 2 5 2.3 STGW80V60DF, STGWT80V60DF Electrical characteristics Table 5. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 80 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge Min. Typ. Max. Unit - 10800 - nF - 390 - pF - 220 - pF - 448 - nC - 76 - nC - 184 - nC Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 60 - ns Current rise time - 30 - ns - 2200 - A/s - 220 - ns - 17 - ns Turn-on current slope VCE = 400 V, IC = 80 A, RG = 5 , VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 1.8 - mJ Eoff(2) Turn-off switching losses - 1 - mJ Total switching losses - 2.8 - mJ Turn-on delay time - 60 - ns Current rise time - 30 - ns - 2100 - A/s - 240 - ns - 22 - ns Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, IC = 80 A, RG = 5 , VGE = 15 V, TJ = 175 C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 3.8 - mJ Eoff(2) Turn-off switching losses - 1.25 - mJ Total switching losses - 5.05 - mJ Ets 1. Parameter Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. DocID024362 Rev 2 5/18 Electrical characteristics STGW80V60DF, STGWT80V60DF Table 7. Diode switching characteristics (inductive load) Symbol 6/18 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 80 A, VR = 400 V, di/dt = 1000 A/s, VGE = 15 V, see Figure 28 Min. Typ. Max. Unit - 60 - ns - 112 - nC - 3.6 - A - 140 - A/s Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 70 - J trr Reverse recovery time - 340 - ns Qrr Reverse recovery charge - 2200 - nC Irrm Reverse recovery current - 13 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 70 - A/s Err Reverse recovery energy - 880 - J IF = 80 A, VR = 400 V, di/dt = 1000 A/s, VGE = 15 V; TJ = 175 C see Figure 28 DocID024362 Rev 2 STGW80V60DF, STGWT80V60DF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature GIPD041120131017FSR Ptot (W) Figure 3. Collector current vs. case temperature 400 120 300 90 200 60 100 30 0 0 25 50 GIPD041120131118FSR IC (A) 11V VGE=15V 9V VGE 15V, TJ 175 C 0 0 75 100 125 150 175 TC(C) Figure 4. Output characteristics (TJ = 25C) GIPD011020131024FSR IC (A) 50 25 75 100 125 150 175 TC(C) Figure 5. Output characteristics (TJ = 175C) GIPD281020131423FSR IC (A) VGE=15V 120 120 80 80 40 40 13V 11V 9V 7V 0 0 1 2 3 4 Figure 6. VCE(sat) vs. junction temperature GIPD041120131129FSR VCE(sat) (V) 0 0 VCE(V) IC= 160A VCE(V) GIPD041120131136FSR VCE(sat) (V) VGE= 15V TJ= 175C 3.5 3 3 IC= 80A 2.5 2.5 2 2 1.5 1 -50 4 3 Figure 7. VCE(sat) vs. collector current VGE= 15V 3.5 2 1 1.5 IC= 40A 0 50 100 150 TJ= 25C TJ(C) DocID024362 Rev 2 1 20 TJ= -40C 40 60 80 100 120 140 IC(A) 7/18 Electrical characteristics STGW80V60DF, STGWT80V60DF Figure 8. Collector current vs. switching frequency GIPD041120131144FSR Ic [A] 160 Figure 9. Forward bias safe operating area GIPD041120131152FSR IC (A) Tc=80C 100 120 Tc=100 C 10 s 80 10 40 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 , VGE = 0/15 V, TJ =175C) 0 1 1 ms 1 1 f [kHz] 10 Figure 10. Transfer characteristics GIPD041120131324FSR IC (A) 100 s Single pulse Tc= 25C, TJ<= 175C VGE= 15V 10 100 VCE(V) Figure 11. Diode VF vs. forward current GIPD041120131336FSR VF (V) TJ=25C TJ= -40C VCE=5V 2.4 120 TJ=175C TJ=-40C TJ= 25C 2 80 1.6 40 TJ= 175C 1.2 0 6 8 7 VGE(V) 9 Figure 12. Normalized VGE(th) vs junction temperature GIPD041120131351FSR VGE(th) (norm) 1.1 IC= 1mA VCE= VGE 0.8 20 40 60 80 100 120 140 IF(A) Figure 13. Normalized V(BR)CES vs. junction temperature GIPD041120131353FSR V(BR)CES (norm) 1.1 IC= 2mA 1.0 0.9 1.0 0.8 0.7 0.6 -50 8/18 0 50 100 150 TJ(C) 0.9 -50 DocID024362 Rev 2 0 50 100 150 TJ(C) STGW80V60DF, STGWT80V60DF Electrical characteristics Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage GIPD041120131358FSR C (pF) GIPD041120131406FSR VGE (V) 16 IC= 80A VCC= 480V Cies 10000 12 8 1000 4 Coes 100 0.1 1 Cres VCE(V) 10 Figure 16. Switching loss vs collector current E (J) 10000 GIPD041120131413FSR VCC = 400V, VGE = 15V, RG = 10, TJ = 175C 0 0 EON 300 400 500 Qg(nC) GIPD041120131419FSR E (J) 6000 6000 200 Figure 17. Switching loss vs gate resistance 8000 8000 100 VCC = 400 V, VGE = 15 V, IC = 80 A, TJ = 175 C EON EOFF 4000 4000 2000 2000 0 20 40 60 80 100 120 140 Figure 18. Switching loss vs temperature E (J) 0 0 IC(A) EOFF 10 30 20 RG() Figure 19. Switching loss vs collector-emitter voltage GIPD041120131424FSR E (J) VCC= 400V, VGE= 15V, RG= 10, IC= 80A GIPD041120131428FSR TJ= 175C, VGE= 15V, RG= 10, IC= 80A 6000 4000 40 EON EON 4000 3000 EOFF EOFF 2000 2000 1000 0 50 100 150 TJ(C) DocID024362 Rev 2 0 150 250 350 450 VCE(V) 9/18 Electrical characteristics STGW80V60DF, STGWT80V60DF Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance t (ns) GIPD041120131437FSR TJ= 175C, VGE= 15V, RG= 10, VCC= 400V GIPD041120131444FSR t (ns) TJ= 175C, VGE= 15V, IC= 80A, VCC= 400V tdoff tdoff 1000 100 tdon tdon 100 tr tr tf 10 20 tf 40 60 80 100 120 140 IC(A) Figure 22. Reverse recovery current vs. diode current slope Irm (A) 10 0 10 20 30 40 RG() Figure 23. Reverse recovery time vs. diode current slope GIPD041120131449FSR GIPD041120131511FSR trr (ns) IF = 80A, Vr = 400V IF = 80A, Vr = 400V 120 300 100 TJ =175C 80 200 TJ =175C 60 40 100 TJ =25C 20 0 0 500 Figure 24. Reverse recovery charge vs. diode current slope Qrr (nC) 0 0 1000 1500 2000 2500 di/dt(A/s) 500 1000 1500 2000 2500 di/dt(A/s) Figure 25. Reverse recovery energy vs. diode current slope GIPD041120131516FSR IF = 80A, Vr = 400V TJ =25C GIPD041120131521FSR Err (J) IF = 80A, Vr = 400V TJ =175C 1200 6000 TJ =175C 900 4000 TJ =25C 600 TJ =25C 2000 300 0 0 10/18 500 1000 1500 2000 2500 di/dt(A/s) DocID024362 Rev 2 0 0 500 1000 1500 2000 2500 di/dt(A/s) STGW80V60DF, STGWT80V60DF Electrical characteristics Figure 26. Thermal impedance for IGBT ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 27. Thermal impedance for diode DocID024362 Rev 2 11/18 Test circuits 3 STGW80V60DF, STGWT80V60DF Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit AM01504v1 Figure 30. Switching waveform AM01505v1 Figure 31. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 12/18 DocID024362 Rev 2 AM01507v1 STGW80V60DF, STGWT80V60DF 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 32. TO-247 drawing 0075325_G Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 DocID024362 Rev 2 13/18 Package mechanical data STGW80V60DF, STGWT80V60DF Table 8. TO-247 mechanical data mm. Dim. Min. Typ. b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/18 Max. 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID024362 Rev 2 5.70 STGW80V60DF, STGWT80V60DF Package mechanical data Figure 33. TO-3P drawing 8045950_A DocID024362 Rev 2 15/18 Package mechanical data STGW80V60DF, STGWT80V60DF Table 9. TO-3P mechanical data mm Dim. Min. Typ. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 16/18 Max. 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID024362 Rev 2 STGW80V60DF, STGWT80V60DF 5 Revision history Revision history Table 10. Document revision history Date Revision 12-Mar-2013 1 Initial release. 2 Updated title, features and description in cover page. Document status promoted from preliminary to production data. Updated Table 4: Static characteristics, Table 5: Dynamic characteristics, Table 6: IGBT switching characteristics (inductive load) and Table 7: Diode switching characteristics (inductive load). Inserted Section 2.1: Electrical characteristics (curves). 10-Jan-2014 Changes DocID024362 Rev 2 17/18 STGW80V60DF, STGWT80V60DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER'S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR "AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL" INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2014 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18 DocID024362 Rev 2 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: STMicroelectronics: STGW80V60DF STGWT80V60DF