This is information on a product in full production.
January 2014 DocID024362 Rev 2 1/18
18
STGW80V60DF
STGWT80V60DF
Trench gate field-stop IGBT, V series
600 V, 80 A very high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•Tail-less switching off
•V
CE(sat)
= 1.85 V (typ.) @ I
C
= 80 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Very fast soft recovery antiparallel diode
Applications
•Photovoltaic inverters
•Uninterruptible power supply
•Welding
•Power factor correction
•Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2 or TAB)
G (1)
E (3)
TO-247
1
23
TO-3P
1
2
3
TAB
Table 1. Device summary
Order code Marking Package Packaging
STGW80V60DF GW80V60DF TO-247 Tube
STGWT80V60DF GWT80V60DF TO-3P Tube
www.st.com
Contents STGW80V60DF, STGWT80V60DF
2/18 DocID024362 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID024362 Rev 2 3/18
STGW80V60DF, STGWT80V60DF Electrical ratings
1 Electrical ratings
Table 2. Absolu te maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 120
(1)
1. Current level is limited by bond wires
A
I
C
Continuous collector current at T
C
= 100 °C 80 A
I
CP(2)
2. Pulse width limited by maximum junction temperature
Pulsed collector current 240 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current at T
C
= 25 °C 120
(1)
A
I
F
Continuous forward current at T
C
= 100 °C 80 A
I
FP(2)
Pulsed forward current 360 A
P
TOT
Total dissipation at T
C
= 25 °C 469 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.32 °C/W
R
thJC
Thermal resistance junction-case diode 0.66 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGW80V60DF, STGWT80V60DF
4/18 DocID024362 Rev 2
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 80 A 1.85 2.3
V
V
GE
= 15 V, I
C
= 80 A
T
J
= 125 °C 2.15
V
GE
= 15 V, I
C
= 80 A
T
J
= 175 °C 2.4
V
F
Forward on-voltage
I
F
= 80 A 1.9 2.3 V
I
F
= 80 A T
J
= 125 °C 1.6 V
I
F
= 80 A T
J
= 175 °C 1.5 V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 100 μA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
DocID024362 Rev 2 5/18
STGW80V60DF, STGWT80V60DF Electrical characteristics
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
- 10800 - nF
C
oes
Output capacitance - 390 - pF
C
res
Reverse transfer
capacitance - 220 - pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 80 A,
V
GE
= 15 V, see Figure 29
- 448 - nC
Q
ge
Gate-emitter charge - 76 - nC
Q
gc
Gate-collector charge - 184 - nC
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 5 Ω, V
GE
= 15 V,
see Figure 28
-60-ns
t
r
Current rise time - 30 - ns
(di/dt)
on
Turn-on current slope - 2200 - A/μs
t
d(off)
Turn-off delay time - 220 - ns
t
f
Current fall time - 17 - ns
E
on(1)
1. Energy losses include reverse recovery of the diode.
Turn-on switching losses - 1.8 - mJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 1 - mJ
E
ts
Total switching losses - 2.8 - mJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 5 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 28
-60-ns
t
r
Current rise time - 30 - ns
(di/dt)
on
Turn-on current slope - 2100 - A/μs
t
d(off)
Turn-off delay time - 240 - ns
t
f
Current fall time - 22 - ns
E
on(1)
Turn-on switching losses - 3.8 - mJ
E
off(2)
Turn-off switching losses - 1.25 - mJ
E
ts
Total switching losses - 5.05 - mJ
Electrical characteristics STGW80V60DF, STGWT80V60DF
6/18 DocID024362 Rev 2
Table 7. Diode switching characterist ics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 80 A, V
R
= 400 V,
di/dt = 1000 A/μs,
V
GE
= 15 V, see Figure 28
-60-ns
Q
rr
Reverse recovery charge - 112 - nC
I
rrm
Reverse recovery current - 3.6 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 140 - A/μs
E
rr
Reverse recovery energy - 70 - μJ
t
rr
Reverse recovery time
I
F
= 80 A, V
R
= 400 V,
di/dt = 1000 A/μs, V
GE
= 15
V; T
J
= 175 °C
see Figure 28
- 340 - ns
Q
rr
Reverse recovery charge - 2200 - nC
I
rrm
Reverse recovery current - 13 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
-70-A/μs
E
rr
Reverse recovery energy - 880 - μJ
DocID024362 Rev 2 7/18
STGW80V60DF, STGWT80V60DF Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. case temperature
P
tot
300
200
100
0025 T
C
(°C)
(W)
100
400
50 75 175125 150
GIPD041120131017FSR
I
C
60
30
0025 T
C
(°C)
(A)
100
90
50 75
120
175
V
GE
≥ 15V, T
J
≤ 175 °C
125 150
GIPD011020131024FSR
Figure 4. Output characteristics (T
J
= 25°C) Figure 5. Output characteristics (T
J
= 175°C)
I
C
40
0
01V
CE
(V)
(A)
4
80
23
V
GE
=15V
120
9V
11V
GIPD041120131118FSR
I
C
40
0
01V
CE
(V)
(A)
4
80
23
V
GE
=15V
120 9V
11V
7V
13V
GIPD281020131423FSR
Figure 6. V
CE(sat)
vs. junction temperature Figure 7. V
CE(sat)
vs. collector current
V
CE(sat)
3
2.5
2
1.5
-50 T
J
(°C)
(V)
100
3.5
0 50 150
V
GE
= 15V
I
C
= 160A
I
C
= 80A
I
C
= 40A
1
GIPD041120131129FSR
V
CE(sat)
2.5
2
1.5
20 I
C
(A)
(V)
80
3
40 60
3.5
100
1
V
GE
= 15V
T
J
= -40°C
T
J
= 25°C
T
J
= 175°C
120 140
GIPD041120131136FSR
Electrical characteristics STGW80V60DF, STGWT80V60DF
8/18 DocID024362 Rev 2
Figure 8. Collector current vs. switching
frequency Figure 9. Forward bias safe operating area
Figure 10. Transfer characteristics Figure 11. Diode V
F
vs. forward curren t
Figure 12. Normalized V
GE(th)
vs junction
temperature Fig ure 13. Normali ze d V
(BR)CES
vs. junction
temperature
0
40
80
120
160
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R =4.7
,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
GIPD041120131144FSR
I
C
100
10
11V
CE
(V)
(A)
10
10 μs
100 μs
1 ms
Single pulse
Tc= 25°C, T
J
<= 175°C
V
GE
= 15V
100
GIPD041120131152FSR
I
C
120
80
40
0
67 V
GE
(V)
(A)
89
T
J
=175°C
T
J
=-40°C
T
J
=25°C
V
CE
=5V
GIPD041120131324FSR
V
F
2
1.6
1.2
0.820 I
F
(A)
(V)
40
T
J
= 175°C
60 80 100
T
J
= 25°C
T
J
= -40°C
120 140
2.4
GIPD041120131336FSR
V
GE(th)
1.1
1.0
0.6
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 1mA
V
CE
= V
GE
0.7
0.8
0.9
GIPD041120131351FSR
V
(BR)CES
1.1
1.0
0.9
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 2mA
GIPD041120131353FSR
DocID024362 Rev 2 9/18
STGW80V60DF, STGWT80V60DF Electrical characteristics
Figure 14. Capa citance variation Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching loss vs collector current Figure 17. Switching loss vs gate resistance
Figure 18. Switching loss vs temperature Figure 19. Switching loss vs collector-emitter
voltage
C
100 V
CE
(V)
(pF)
0.1 1 10
C
ies
1000
10000
C
oes
C
res
GIPD041120131358FSR
V
GE
8
0Q
g
(nC)
(V)
0 100
I
C
= 80A
V
CC
= 480V
4
200
12
300
16
400 500
GIPD041120131406FSR
E
0I
C
(A)
(μJ)
20 40 60
2000
80 100
4000
E
ON
6000
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, T
J
= 175°C
120
E
OFF
140
8000
10000
GIPD041120131413FSR
E
0R
G
(Ω)
(μJ)
01020
2000
4000
6000
30 40
8000
E
OFF
V
CC
= 400 V, V
GE
= 15 V,
I
C
= 80 A, T
J
= 175 °C
E
ON
GIPD041120131419FSR
E
1000 T
J
(°C)
(μJ)
050
2000
3000
4000
100 150
E
OFF
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, I
C
= 80A
E
ON
GIPD041120131424FSR
E
0V
CE
(V)
(μJ)
150 350
2000
4000
6000
E
OFF
T
J
= 175°C, V
GE
= 15V,
R
G
= 10Ω, I
C
= 80A
E
ON
250 450
GIPD041120131428FSR
Electrical characteristics STGW80V60DF, STGWT80V60DF
10/18 DocID024362 Rev 2
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
t
I
C
(A)
(ns)
20 40 60
10 80
t
f
T
J
= 175°C, V
GE
= 15V,
R
G
= 10Ω, V
CC
= 400V t
doff
100
t
r
t
don
100 120 140
GIPD041120131437FSR
t
10 R
G
(Ω)
(ns)
01020
100
30
t
f
T
J
= 175°C, V
GE
= 15V,
I
C
= 80A, V
CC
= 400V
40
1000
t
don
t
doff
t
r
GIPD041120131444FSR
Figure 22. Reverse recovery current vs. diode
current slope Figure 23. Reverse recovery time vs. diode
current slope
Irm
0di/dt(A/µs)
(A)
0 500 1000
40
1500
IF = 80A, Vr = 400V
2000
60
=175°C
=25°C
80
20
TJ
TJ
100
2500
120
GIPD041120131449FSR
trr
0di/dt(A/µs)
(ns)
0 500 1000
200
1500
IF = 80A, Vr = 400V
2000
300
=175°C
=25°C
100
TJ
TJ
2500
GIPD041120131511FSR
Figure 24. Reverse recovery charge vs. diode
current slope Figure 25. Reverse recovery energy vs. diode
current slope
Qrr
0di/dt(A/µs)
(nC)
0 500 1000
6000
1500
IF = 80A, Vr = 400V
2000
=175°C
=25°C
4000
TJ
TJ
2000
2500
GIPD041120131516FSR
Err
0di/dt(A/µs)
(μJ)
0 500 1000
900
1500
IF = 80A, Vr = 400V
2000
=175°C
=25°C
300
TJ
TJ
600
1200
2500
GIPD041120131521FSR
DocID024362 Rev 2 11/18
STGW80V60DF, STGWT80V60DF Electrical characteristics
Figure 26. Thermal impedance for IGBT
Figure 27. Thermal impedance for diode
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
Test circuits STGW80V60DF, STGWT80V60DF
12/18 DocID024362 Rev 2
3 Test circuits
Figure 28. Test circuit for inductive load
switching Figure 29. Gate charge test circuit
Figure 30. Switching waveform Figure 31. Diode recovery time waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
trr
tatb
Qrr
IRRM
t
VF
dv/dt
DocID024362 Rev 2 13/18
STGW80V60DF, STGWT80V60DF Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 32. TO-2 47 drawing
Table 8. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
0075325_G
Package mechanical data STGW80V60DF, STGWT80V60DF
14/18 DocID024362 Rev 2
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Table 8. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
DocID024362 Rev 2 15/18
STGW80V60DF, STGWT80V60DF Package mechanical data
Figure 33. TO-3P drawing
8045950_A
Package mechanical data STGW80V60DF, STGWT80V60DF
16/18 DocID024362 Rev 2
Table 9. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
DocID024362 Rev 2 17/18
STGW80V60DF, STGWT80V60DF Revision history
5 Revision history
Table 10. Document revision history
Date Revision Changes
12-Mar-2013 1 Initial release.
10-Jan-2014 2
Updated title, features and description in cover page.
Document status promoted from preliminary to production data.
Updated Table 4: Static characteristics, Table 5: D yna mi c
characteristics, Table 6: IGBT switching characteristics (inductive
load) and Table 7: Diode switching characteristics (inductive load).
Inserted Section 2.1: Electric al characteristics (curves).
STGW80V60DF, STGWT80V60DF
18/18 DocID024362 Rev 2
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