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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQT3P20 P-Channel QFET(R) MOSFET -200 V, -0.67 A, 2.7 Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V, ID = 0.335 A * Low Gate Charge ( Typ. 6.0 nC) * Low Crss ( Typ. 7.5 pF) D D S SOT-223 G D Absolute Maximum Ratings Symbol VDSS ID G Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR TJ, TSTG TL S TC = 25C unless otherwise noted. - Continuous (TC = 70C) dv/dt PD D - Pulsed (Note 1) FQT3P20TF -200 Unit V -0.67 A -0.53 A -2.7 A 30 V (Note 2) 150 mJ Avalanche Current (Note 1) -0.67 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 0.25 -5.5 2.5 0.02 -55 to +150 mJ V/ns W W/C C 300 C FQT3P20TF 50 Unit C/W (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient (c)2001 Fairchild Semiconductor Corporation FQT3P20 Rev. C0 1 www.fairchildsemi.com FQT3P20 -- P-Channel QFET(R) MOSFET October 2013 Device Marking FQT3P20 Device FQT3P20TF Electrical Characteristics Symbol Package SOT-223 Reel Size 13" Tape Width 12 mm Quantity 2500 units TC = 25C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit -200 -- -- V -- -0.18 -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- -1 A VDS = -160 V, TC = 125C -- -- -10 A IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA -3.0 -- -5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -0.335 A -- 2.06 2.7 gFS Forward Transconductance VDS = -40 V, ID = -0.335 A -- 0.7 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 190 250 pF -- 45 60 pF -- 7.5 10 pF -- 8.5 25 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -100 V, ID = -2.8 A, RG = 25 (Note 4) VDS = -160 V, ID = -2.8 A, VGS = -10 V (Note 4) -- 35 80 ns -- 12 35 ns -- 25 60 ns -- 6.0 8.0 nC -- 1.7 -- nC -- 2.9 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -0.67 ISM -- -- -2.7 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -0.67 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time --- -100 -5.0 -- V ns Qrr Reverse Recovery Charge -- 0.34 -- C VGS = 0 V, IS = -2.8 A, dIF / dt = 100 A/s Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 500mH, IAS = -0.67A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -2.8A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially independent of operating temperature (c)2001 Fairchild Semiconductor Corporation FQT3P20 Rev. C0 2 www.fairchildsemi.com FQT3P20 -- P-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top : -ID, Drain Current [A] 0 10 -ID , Drain Current [A] 0 10 -1 10 150 25 -55 Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = -40V 2. 250 s Pulse Test -1 -1 0 10 10 1 10 2 10 4 8 6 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 -IDR , Reverse Drain Current [A] RDS(on) [ ], Drain-Source On-Resistance 10 VGS = - 10V 6 VGS = - 20V 4 2 0 10 25 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0 -1 0 2 4 6 10 8 0.2 0.4 0.6 -ID , Drain Current [A] 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 VDS = -40V 10 Capacitance [pF] 300 -V GS , Gate-Source Voltage [V] VDS = -100V Ciss Coss 200 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 100 0 -1 10 VDS = -160V 8 6 4 2 Note : ID = -2.8 A 0 0 10 0 1 10 Figure 5. Capacitance Characteristics (c)2001 Fairchild Semiconductor Corporation FQT3P20 Rev. C0 1 2 3 4 6 7 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQT3P20 -- P-Channel QFET(R) MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 Notes : 1. VGS = 0 V 2. ID = -250 A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 Notes : 1. VGS = -10 V 2. ID = -0.335 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 0.8 1 10 Operation in This Area is Limited by R DS(on) -ID, Drain Current [A] 100 s 0.6 -ID, Drain Current [A] 1 ms 10 ms 0 10 100 ms 0.4 DC -1 10 0.2 Notes : -2 10 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.0 25 -3 10 -1 10 0 1 10 2 10 10 50 75 Figure 9. Maximum Safe Operating Area ZJA(t), Thermal Response [oC/W] 100 125 150 TC, Case Temperature [] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 N o te s : 1 . Z JA( t ) = 5 0 /W M a x . 2 . Duty F a c to r , D = t 1 / t 2 3 . T J M - T A = P D M * Z JA( t ) 0 .2 1 0 .1 0 .0 5 10 0 .0 2 0 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve (c)2001 Fairchild Semiconductor Corporation FQT3P20 Rev. C0 4 www.fairchildsemi.com FQT3P20 -- P-Channel QFET(R) MOSFET Typical Characteristics FQT3P20 -- P-Channel QFET(R) MOSFET Figure 12. Gate Charge Test Circuit & Waveform 200nF 12V VGS Same Type as DUT 50K Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA IG = const. Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT VGS -10V VDS 90% Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L tp ID RG VGS -10V VDD VDD VDS (t) ID (t) DUT IAS BVDSS tp (c)2001 Fairchild Semiconductor Corporation FQT3P20 Rev. C0 Time 5 www.fairchildsemi.com FQT3P20 -- P-Channel QFET(R) MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt (c)2001 Fairchild Semiconductor Corporation FQT3P20 Rev. C0 6 www.fairchildsemi.com FQT3P20 -- P-Channel QFET(R) MOSFET Mechanical Dimensions SOT-223 4L Figure 16. Molded Package, SOT-223, 4 Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TTE23-004 Dimension in Millimeters (c)2001 Fairchild Semiconductor Corporation FQT3P20 Rev. C0 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2001 Fairchild Semiconductor Corporation FQT3P20 Rev. C0 8 www.fairchildsemi.com FQT3P20 -- P-Channel QFET(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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