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Is Now Part of
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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October 2013
©2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
www.fairchildsemi.com
1
P-Channel QFET® MOSFET
-200 V, -0.67 A, 2.7 Ω
FQT3P20 — P-Channel QFET® MOSFET
FQT3P20
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
-0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V,
ID = 0.335 A
Low Gate Charge ( Typ. 6.0 nC)
Low Crss ( Typ. 7.5 pF)
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Thermal Characteristi cs
Symbol Parameter FQT3P20TF Unit
VDSS Drain-Source Volt age -200 V
ID-0.67 ADrain Current - Continuous (TC = 25°C)
- Continuous (TC = 70°C) -0.53 A
IDM Drain Current - Pulsed (Note 1) -2.7 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ
IAR Avalanche Current (Note 1) -0.67 A
EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PDPower Dissipation (TC = 25°C) 2.5 W
- Derate above 25°C 0.02 W/°C
TJ, TSTG Ope rating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQT3P20TF Unit
RθJA Thermal Resistance, Junction-to-Ambient 50 °C/W
G
S
D
SOT-223
D
D
DS
G
G
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQT3P20 FQT3P20TF SOT-223 13" 12 mm 2500 units
©2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
www.fairchildsemi.com
2
FQT3P20 — P-Channel QFET® MOSFET
(Note 4)
(Note 4)
Electrical Characteristics TC = 25°C unless otherwise noted.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 500mH, IAS = -0.67A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -2.8A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
Symbol Parame ter Test Condit ions Min Typ Max Unit
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-200 -- -- V
BVDSS/
TJ
Breakdown Voltage Temperature
Coefficient ID = -250 µA, Referenced to 25°C -- -0.18 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- -1 µA
VDS = -160 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-3.0 -- -5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = -10 V, ID = -0.335 A -- 2.06 2.7
gFS Forward Transconductance VDS = -40 V, ID = -0.335 A -- 0.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 190 250 pF
Coss Output Capacitance -- 45 60 pF
Crss Reverse Transfer Capacit ance -- 7.5 10 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -100 V, ID = -2.8 A,
RG = 25
-- 8.5 25 ns
trTurn-On Rise Time -- 35 80 ns
td(off) Turn-Off Dela y Time -- 12 35 ns
tfTurn-Off Fall Time -- 2 5 60 ns
QgTotal Gate Charge VDS = -160 V, ID = -2.8 A,
VGS = -10 V
-- 6.0 8.0 nC
Qgs Gate-Source Charge -- 1.7 -- nC
Qgd Gate-Drain Charge -- 2.9 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- -0.67 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -2.7 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = -0.67 A -- -- -5.0 V
trr Reverse Recover y Time VGS = 0 V, IS = -2.8 A,
dIF / dt = 100 A/µs -- 100 -- ns
Qrr Reverse Recovery Charge -- 0.34 -- µC
©2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
www.fairchildsemi.com
3
FQT3P20 — P-Channel QFET® MOSFET
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10-1
100
25
150
N o te s :
1. V GS = 0V
2. 250μs Pulse Test
-IDR , Reverse Drain C urrent [A]
-VSD , Source-D rain Voltage [V]
2 64 10
10-1
100
No tes :
1. V DS = -40V
2. 250μs Pulse Test
-55
150
25
-ID , D ra in C u rr en t [A ]
4
-VGS , G ate-Source Voltage [V]
10 2343 67
0
2
4
6
8
10
12
VDS = -100V
VDS = -40V
VDS = -160V
Note : ID = -2.8 A
-VGS , Gate-Source Voltage [V]
QG, To tal Ga t e Charge [nC]
10-1 0101
0
100
200
300
400
Ciss = Cgs + Cgd (Cds = shorted)
= Cgd
ds
Coss = C + Cgd
Crss
N o te s :
1. V GS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
10
-VDS, Drain-Source Voltage [V]
20 4 86
0
2
4
6
8
10
N o te : TJ = 25
VGS = - 20V
VGS = - 10V
RDS(on) [],
Drain-Source O n-Resistance
-ID , Drain Cu r rent [A ]
10-1 0101
10-1
100
VGS
Top : -15.0 V
-1 0 .0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
No te s :
1. 250μs Pulse Test
2. T C = 25
-ID, D r ain C u rr e nt [A]
10
-VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. C apacitance C haracterist ics Figure 6. Ga te Charge Characteris ti cs
Figu re 3. On-R esistance Variat ion vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteri st ic s
8
ZθJA(t), Thermal Response [oC/W]
©2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
www.fairchildsemi.com
4
FQT3P20 — P-Channel QFET® MOSFET
10-5 10-4 10-3 10-2 10-1 100101102103
10 1-
100
101 Notes :
1. Z (t) = 5 0 /W Ma x .
2.
Duty
θJA F a c tor, D=t1/t2
3. T JM - Z*TA = PDM θJA(t)
s in g le p u ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
-ID, Drain C u rre n t [A]
TC, Case Temperature [
]
10-1 100101102
10-3
10-2
10-1
100
101
100 ms
DC
10 ms
1 ms 100 µs
Operation in This Area
is Limited by R DS(on)
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
-ID, Drain Current [A]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
No te s :
1. VGS = -10 V
2. I D = -0.335 A
RDS(ON) , (Nor malize d )
Drain-So urce O n-Res istance
TJ, Junction T emperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
N o te s :
1 . V GS = 0 V
2 . ID = -250 μA
-BV DSS , ( N orma liz e d )
D rain-Sou rce Breakdow n Voltage
TJ, Junction Tem perature [oC]
Typical Characteristics (Continued)
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Breakdo w n Vol ta ge Variation
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperature
t1, Square W ave Pulse Duration [sec]
Figure 11. Tr ans ient Ther m al Res pons e Cur ve
t1
PDM
t2
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
VGS 10%
90%
td(on) tr
ton toff
td(off) tf
VDD
-10V
VDS
RL
DUT
RG
VGS
VDS
VGS 10%
90%
td(on) tr
ton toff
td(off) tf
VDD
-10V
VDS
RL
DUT
RG
VGS
Charge
VGS
-10V
Qg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
-10V
Qg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
GS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
LL
ID
ID
t p
VGS
IG = const.
©2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
www.fairchildsemi.com
5
FQT3P20 — P-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGCompliment of DUT
(N-Channel)
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGCompliment of DUT
(N-Channel)
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
©2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
www.fairchildsemi.com
6
FQT3P20 — P-Channel QFET® MOSFET
Mechanical Dimensions
Dimension in Millimeters
SOT-223 4L
Figure 16. Molded Package, SOT-223, 4 Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TTE23-004
FQT3P20 — P-Channel QFET® MOSFET
©2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
www.fairchildsemi.com
7
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
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Solutions for Your Success™
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®*
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TRUECURRENT®*
SerDes™
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VCX™
VisualMax™
VoltagePlus™
XS™
®
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Datasheet contains preliminary data; supplementary data will be published at a later
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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Rev. I66
®
©2001 Fairchild Semiconductor Corporation
FQT3P20 Rev. C0
www.fairchildsemi.com
8
FQT3P20 — P-Channel QFET® MOSFET
www.onsemi.com
1
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