2N2222
2N2222A
NPN Switching
Transistors
Features
• High current (max.800mA)
• Low voltage (max.40V)
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 2N2222
2N2222A 30
40 V
VCBO Collector-Base Voltage 2N2222
2N2222A 60
75 V
VEBO Emitter-Base Voltage 2N2222
2N2222A 5.0
6.0 V
ICCollector Current (DC) 800 mA
ICM Peak Collector Current 800 mA
IBM Peak Base Current 200 mA
TJOperating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
Ptot
Total power Dissipation
TAЉ25к
TCЉ25к500
1.2 mW
W
RJC Thermal Resistance, Junction to Case 146 K/W
RJA Thermal Resistance, Junction to Ambient 350 K/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
ICBO
Collector cut-off current
(VCB=50Vdc, IE=0) 2N2222
(VCB=50Vdc, IE=0,TA=150к)
(VCB=60Vdc, IE=0) 2N2222A
(VCB=60Vdc, IE=0,TA=150к)
---
---
---
---
10
10
10
10
nAdc
uAdc
nAdc
uAdc
IEBO Emitter Cut-off current
(IC=0, VEB=3Vdc) --- 10 nAdc
hFE
DC Current Gain
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=1.0Vdc)*
(IC=150mAdc, VCE=10Vdc)*
35
50
75
50
100 300
hFE
DC Current Gain
(IC=500mAdc, VCE=10Vdc) * 2N2222
2N2222A 30
40 ---
---
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .209 .230 5.309 5.842 Φ
B .178 .195 4.521 4.953 Φ
C .170 .210 4.318 5.334
D .50 ---- 12.7
E .100 2.54 ΦTYP
F .028 .048 .7112 1.219
G ----- .050 ----- 1.27
H .009 .031 0.229 0.787
J 44° 46° 44° 46°
K .036 .046 0.914 1.168
L .016 .021 0.406 0.533
TO-18
Revision: A 2011/01/01
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
www.mccsemi.com
1 of 3
----
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Symbol Parameter Min Max Units
ON CHARACTERISTICS*
VCE(sat) Collector-Emitter Saturation Voltage8
(IC=150mAdc, IB=15mAdc) 2N2222
(IC=500mAdc, IB=50mAdc) ---
--- 400
1.6 mVdc
Vdc
VCE(sat) Collector-Emitter Saturation Voltage*
(IC=150mAdc, IB=15mAdc) 2N2222A
(IC=500mAdc, IB=50mAdc) ---
--- 300
1.0 mVdc
Vdc
VBE(sat) Base-Emitter Saturation Voltage *
(IC=150mAdc, IB=15mAdc) 2N2222
(IC=500mAdc, IB=50mAdc) ---
--- 1.3
2.6 Vdc
Vdc
VBE(sat) Base-Emitter Saturation Voltage*
(IC=150mAdc, IB=15mAdc) 2N2222A
(IC=500mAdc, IB=50mAdc) 0.6
--- 1.2
2.0 Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
COB Output Capacitance
(VCB=10Vdc,IE=ie=0, f=1.0MHz) --- 8.0 pF
SWITCHING CHARACTERISTICS
TdDelay Time --- 10 ns
tr Rise Time --- 25 ns
tsStorage Time --- 200 ns
tfFall Time
ICON=150mAdc,
IBON=15mAdc, IB(off)=15mAdc --- 60 ns
* Pulse Test: tpЉ300us, Duty CycleЉ2.0%
2N2222,2N2222A MCC
fTTransitionFrequency
(VCE=20Vdc,IC=20mAdc, f=100MHz) 2N2222 250 --- MHz
2N2222A 300 --- MHz
NF Noise Figure
(VCE=5.0Vdc,IC=200uAdc, Rs=2.0KOHM,f=1.0kHz,B=200Hz) 2N2222A --- 4.0 dB
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 3
MCC
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
3 of 3
Ordering Information :
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Device Packing
Part Number-BP
Bulk;100pcs/Box
