TYPES 2N3583, 2N3584, 2N3585, 2N4240 N-P-N SILICON POWER TRANSISTORS HIGH-VOLTAGE POWER TRANSISTORS DESIGNED FOR INDUSTRIAL AND MILITARY APPLICATIONS Min V(BR)CEO of 300 V (2N3585, 2N4240) e Typ VCE(sat) of 0.25 V at Ip =125 mA, Ic=1A = TyP ton of 0.2 us, at 750 mA, 200 V (2N4240) Min fT of 15 MHz at 10 V, 200 mA (2N4240) e 35 W at 25C Case Temperature *mechanical data 014s R MAX SEATING PLANE 5 0.360 MIN BOTH ENDS 0.340 0.250 O Ln . 0.620 9.500 " MAX 470 t 0.962 O1A DIA a 9.350 R MAX 034 5, 0,182 - 0,075 0.142 0" 9.950 maxet ke 0.050 2 HOLES ALL DIMENSIONS ARE IN INCHES THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE ALL JEDEC TO-66 DIMENSIONS AND NOTES ARE APPLICABLE absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage one Continuous Collector Current Peak Collector Current (See Note 2} Continuous Base Current rn Safe Operating Area at 100C Case Temperature we ee Continuous Device Dissipation at (or below) 25C Case Temperature (See Note 3) ae Continuous Device Dissipation at 100 c Case Temperature. (See Note 3) Continuous Device Dissipation at (or below) 25 c Free- Air Temperature {See Note 4) Operating Collector Junction Temperature Range Storage Temperature Range Terminal Temperature 1/32 Inch from Case for 10 Seconds NOTES: 1, This value applies when the base-emitter diode is open-circuited. 2. This value applies for ty, 0.3 ms, duty cycle < 10%. 3. Derate linearly to 200C casa temperature at the rate of 0.2 w/c. 4 . Derate linearly to 200C free-air temperature at the rate of 11.4 mW/C. 2N3583 2N3584 2N3585 2N4240 250V* 375V" 500V* 500 V* 176V" 250v* 300V" 300V* <<. 6 v" _______> 1A 2Aa* 2A* 2A* 5A 5A 5A* 5A ._______ 1 A* _______ <a See Figure 5 __~-_ <__~ 35 w* _____ <____ 20 w*____ <-____ 2w _____ <+ 65C to 200C* ______ <@q -65C to 200C* ____ <____._ 235c*_._____. *JEDEC registered data, This data sheet contains alt applicable registered date in effect at the time of publication, TEXAS INSTRUMENTS 2-309TYPES 2N3583, 2N3584, 2N3585, 2N4240 N-P-N SILICON POWER TRANSISTORS | *electrical characteristics at 25C case temperature (unless otherwise noted) 2N3583 2N3684 2N3685 2N42. ; PARAMETER TEST CONDITIONS 40 UNIT MIN MAX | MIN MAX] MIN MAX| MIN MAX v Collector Emitter | | 200mA, Ig =0 See Note | 175 250 300 300 v = . =0, ee No (BRICEQ) Breakdown Voltage c m 8 e ' Collector Cutoff Vee = 150V, Ig <0 10 A CEO Current ce* 1B Vee =225V, Vee =-15V 1 Voce = Vee =-15V 1 \ Collector Cutoff wae ee 7 =. 7 2 A = =1. m: cev Current CE 4 BE = ' Voce = 225 V, Vege =-1.5V, Toe = 150C 3 Voge = 300 V, Vege =-1.5V, To = 150C 3 3 5 Emitter Cutoff 1 Vep=6V, I!Ic=0 5 0.6 0.5 0.5) mA E80 Current EB~6 c ' Vee=10V, Ic=05A 40 200 Static Forward ce Voe=10V, Ic=1A See Notes 10 hee Current Transfer Ratio Voce z2V, lc=1A 5 and 6 8 80 8 80 M VcE*2V, IC =0.75A 10 100 Igp=75mA, Ic=0. 1.8 B= 75m C= 075A See Notes VBE Base-Emitter Voltage | ip = 0.1 A, IgtlAaA 5 and 6 1.4 1.4 Vv Vce=10V, Ics1A 1.4 Collector-E mitter Igp=75mA, Ic=0.75A See Notes 1 VCE(sat} ; v Saturation Voltage ig=125mA, IG=1A 5and6 5 0.75 0.75 Smatl-Signal Common-E mitter h. VceE=30V, Ic =0.1A, f=1kH 25 360 fe Forward Current cE c ; Transfer Ratio Smali-Signal Common-E mitter Vee=10V, ic =0.24, f= 5 MHz 2 2 2 3 bre Forward Current cE Transfer Ratio NOTES: 5. These parameters must be measured using pulse techniques. ty = 300 us, duty cycle < 2%, 6. These parameters are rneasured with voltage-sensing contacts separate from the current-carrying contacts and located within 0.125 Inch from the device body, *JEDEC ragistered data thermal characteristics PARAMETER MAX _| UNIT Rese Junction-to-Case Thermal Resistance 5 CAN Roya Junction-to-Free-Air Thermal Resistance 87.5 2-310 TEXAS INSTRUMENTSTYPES 2N3583, 2N3584, 2N3585, 2N4240 N-P-N SILICON POWER TRANSISTORS *switching characteristics at 25C case temperature 2N%84 2N4240 PARAMETER TEST CONDITIONS? 2N3585 UNIT TYP MAX| TYP MAX tr Rise Time le = 1 3 tg Storage Time cata, 'e(1} = 100 mA, 1g (2) = WOmA, S54 us tf Fait Time VeE(off =4.3V, Ry = 2002, See Figure 1 1 3 t_Rise Time Ig = 0.75 A ! 75mA, tp(2) = -75 mA O15 05 ts Storage Time Sec oe aay ne 387 , on a . 25 6] us te Fall Time BElof) ~~" N. BLE ee Figure 0.5 3 FVoltage and current vatues shown are nominal; exact values vary slightly with transistor parameters, *JEDEC registered data PARAMETER MEASUREMENT INFORMATION c@ INPUT | L MONITOR output Von" 88 V~ ~ 90% So MONITOR = !NPUT -{--- - = --ov 1NS14 -43V+10% | Rept ) dtonte tort lon off, Leaf Tur | * 10% 562 WIS 2N5385 OUTPUT i 1N914 1N914 1N914 90%: ayt I \Ree2 Rt VOLTAGE WAVEFORMS 270 pF F Ww wo Vea2= +7 s CIRCUIT CONDITIONS gen T WK 43v0 + Veo ek! NOMINAL Ic [Rep [Rep2 | AL . 200 Vv T. 1A 372 {53a | 2002 Vep1~ 10V 075A | 509 | 709 | 2672 ADJUST FOR L- Von 8.5 VAT + NOTES: A. moo INPUT MONITOR TEST CIRCUIT Vgen Is 8 30-V putse (from 0 V)} into a 50-2 termination. duty cycle < 2%, ms are ed onan Resistors must be noninductive types. . The d-c power supplies may require additional bypassing in order to minimize ringing. with the 9 FIGURE 1 . The Vgen waveform is supplied by a generator with following characteristics: tr < 15 ns, ty < 15 ns, Zour = 50 2, tw = 20 Hs, ty S15 ns, Rin > 10 MO, Cin S 11.5 pF. TEXAS INSTRUMENTS 2-311TYPES 2N3583, 2N3584, 2N3585, 2N4240 N-P-N SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS 2N3683 STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT Vce-10v Bry Tos 28C Ss 6 hpgStatic Forward Current Transter Ratio 3 VeeBae-Emitter Voltage-V 10 o BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT Ie _r iB Te = 25C See Notes and 6 COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT Ie .e es os p- Tc re See Notes 5 and 6 o4 03 02 ot VCE (sat) Cotlector-E miter Saturation VoliageV 0 0.01 0.02 0.04 01 02 04071 2 4 001 002 0.04 0.0701 02 04 O71 0.01 0.02 004 0070.1 02 O04 971 igCollector Current-A IgColtector CurrentA IeCollector CurrentA FIGURE 2 FIGURE 3 FIGURE 4 NOTES: &. These parameters must be measured using pulse techniques. ty = 300 us, duty cycle < 2%, . These parameters ara measured with voltage-sensing contacts separate from the current-carrying contacts and located within 0,125 inch from the device body. MAXIMUM SAFE OPERATING AREA THERMAL INFORMATION DISSIPATION DERATING CURVE 4 = 2 e 2 1 & 2N3583 3 < O7 a g S 0.4 3 5 oO Oo 5 0.2 3 8 + am 2 5 0.04 F 7 0.02 c 0.01 4 7 10 20 40 70 100 200 400 0 25 50 76 100 125 150 175 200 VceCollector-E mitter VoltageV Te-~Case TemperatureC FIGURE 5 FIGURE 6 TI cannot ossume ony responsibility for any circuits shown 2-312 TEXAS IN STRUMENTS or represent that they ore free trom patent infringement TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.Prot Typ Tg = 25C VcEO Ico hrE Ic type (Tc = 100 C) min max min max Ww Vv A A BUY 70A 75 1000* 10 15 1,0 BUY 708 75 800* 10 15 1,0 BUY 70C 75 500* 10 15 1,0 BUY 71 40 2200* 2 BDX 31 40 2200* 4 BDX 32 40 1700* 4 2N 3439 Siehe Datenblatt Seite 2-301; See Data Sheet Page 2-301 2N 3440 Siehe Datenblatt Seite 2-301; | See Data Sheet Page 2-301 2N 3583 2 35 175 1 49 200 0,5 2N 3584 2 35 250 2 8 140 1 2N 3585 2 35 300 2 8 140 1 2N 3902 4 100 325 2,5 30 90 1 2N 4240 2 35 300 2 6 240 0,75 2N 5157 4 100 400 3,6 30 90 1 2N 5241 4 125 325 5 15 35 2,5 TIP 525 4 (60) 200 5 30 150 2,5 TIP 531 4 (150) 300 15 20 120 7,5 TIP 532 4 (150) 400 15 20 120 7,5 TIP 533 4 (150) 300 15 20 120 75 TIP 534 4 (150) 400 15 20 120 7,5 TIP 535 5 (100) 200 7,5 20 100 5 TIP 536 5 (100) 200 7,5 20 100 5 TIP 537 5 (100) 400 75 20 100 5 TIP 538 5 (125) 200 15 20 100 75 TIP 539 5 (125) 300 15 20 100 75 TIP 540 5 (125) 400 15 20 100 75 3-10 TEXAS INSTRUMENTSft *IceEv (IcEO) Gehause Anwendungen, Bemerkungen min Ices @ VE package applications, remarks MHz mA Vv (1) 1000 TO-3 Fiir Schalteranwendungen (1) 800 TO-3 switching applications (1) 500 TO-3 1 2200 TO-3 Fernsehanwendung, Horizontal-Ablenkendstufen in Sw TV horizontal deflection black and white 1 2200 TO-3 Fernsehanwendung, Horizontal-Ablenkendstufen in Farbgeraten 1 1700 TO-3 Color TV horizontal deflection 10 1 225 TO-66 Fir industrielle und mititarische Anwendung 10 1 300 TO-66 for industrial and military application 10 1 400 TO-66 5 0,25 400 TO-3 15 2 400 TO-66 2,8 0,5 700 TO-3 2,5 0,5 400 TO-3 40 1 250 TO-3 Verstarker, schnetler Schalter amplifier, high-speed switch 50 1 300 TO-3 Verstarker, schneile Schaltanwendung, Netzgerate 50 1 400 TO-3 amplifier, switch, power supply 50 1 300 TO-3 : 50 1 400 TO-3 10 1 300 TO-3 10 1 400 TO-3 10 1 500 TO-3 10 1 300 TO-3 10 1 400 TO-3 10 1 500 TO0-3 TEXAS INSTRUMENTS