Product Standards
Zener Diode
DE5S062D0R
Absolute Maximum Ratings Ta = 25 C
*1: PT = 150 mW achieved with a printed circuit board. (4 Diode total)
*2:
Electrical Characteristics Ta = 25 C 3 C
1.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page
mV/°C
Dual DE3S062D (Common anode)
Anode1,2,3,4
6.51
2.3
Parameter Symbol
Junction temperature Tj
SC-107BB
150
Code
Embossed type (Thermo-compression sealing) 8 000 pcs / reel (standard)
Conditions
5.89
°C
ESD
Internal Connection
±30 kV
Typ
V
Unit
1of
+150 °C
1.0 μA
3
Min
Unit: mm
Max
Marking Symbol
:
Packaging 5. Cathode4
4 Cathode3
41
Basic Part Number :
Halogen-free / RoHS compliant
High ESD
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
DE5S062D0R
Silicon epitaxial planar type
For ESD protection
DE3S062D in SSMini5 type package
Features
1. Cathode1
2.
SOT-665
Panasonic SSMini5-F4-B
JEITA
3. Cathode2
Parameter Symbol Rating Unit
Temperature coefficient of zener voltage *3 SZ IZ = 1 mA
Zener voltage *1, *2 VZ IZ = 1 mA
Terminal Capacitance
Storage temperature Tstg -55 to
150
Reverse current IR VR = 4 V
Total power dissipation *1 PT mW
Electrostatic discharge *2
+85 °COperating ambient temperature Topr -40 to
Note)
Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
pFCt VR = 0 V, f = 1 MHz 55
1.6
1.6
(0.6)
1.2
0.130.2
1.0
(0.5) (0.5)
123
45
123
45
Doc No.
TT4-EA-12738
Revision.
2
Established
:
2010-09-01
Revised
:
2013-10-28
Product Standards
Zener Diode
DE5S062D0R
Technical Data ( reference )
Page 2 of 3
PT - Ta
0
50
100
150
200
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (°C)
Total power dissipation PT (mW)
Mounted on print board. (4 diode total)
IF - VF
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
Forward current IF (A)
Ta = 25 ℃
IR - VR
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
01234
Reverse voltage VR (V)
Reverse current IR (A)
Ta = 25 ℃
IZ - VZ
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
024681012
Zener voltage VZ (V)
Zener current IZ (A)
Ta = 125 ℃
85 ℃
-40 ℃
25 ℃
SZ - IZ
-5
-3
-1
1
3
5
0246810
Zener current IZ (mA)
Temparature coefficient of zener
voltage SZ (mV/°C)
Ct - VR
0
10
20
30
40
50
60
70
80
012345
Reverse voltage VR (V)
Terminal capacitance Ct (pF)
Ta = 25 ℃
f = 1 MHz
Doc No.
TT4-EA-12738
Revision.
2
Established
:
2010-09-01
Revised
:
2013-10-28
Product Standards
Zener Diode
DE5S062D0R
Unit: mm
Page
SSMini5-F4-B
3of3
Land Pattern (Reference) (Unit: mm)
0.13
+0.05
-0.02
1.00
±0.05
1.60
±0.05
(0.5) (0.5)
1.60
±0.05
0 to 0.05 0.20
±0.05
0.55
±0.05
0.20
+0.05
-0.02
1.20
±0.05
(0.27)
123
4
(5°)
(5°)
5
1.6
0
.
35
0.4
0.5 0.5
Doc No.
TT4-EA-12738
Revision.
2
Established
:
2010-09-01
Revised
:
2013-10-28
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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