HY5S2A6C(L/S)F / HY5S26CF 4Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs. The Hynix HY5S2A6CF is a 134,217,728bit CMOS Synchronous Dynamic Random Access Memory. It is organized as 4banks of 2,097,152x16. The Low Power SDRAM provides for programmable options including CAS latency of 1, 2, or 3, READ or WRITE burst length of 1, 2, 4, 8, or full page, and the burst count sequence(sequential or interleave). And the Low Power SDRAM also provides for special programmable options including Partial Array Self Refresh of a quarter bank, a half bank, 1bank, 2banks, or all banks, Temperature Compensated Self Refresh of 15, 45, 70, or 85 degrees C. A burst of Read or Write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst Read or Write command on any cycle(This pipelined design is not restricted by a 2N rule). Deep Power Down Mode is a additional operating mode for Low Power SDRAM. This mode can achieve maximum power reduction by removing power to the memory array within each SDRAM. By using this feature, the system can cut off alomost all DRAM power without adding the cost of a power switch and giving up mother-board power-line layout flexibility. FEATURES * * * * * * * * * Standard SDRAM Protocol Internal 4bank operation Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features ( HY5S26CF series can't support these features) - PASR(Partial Array Self Refresh) - TCSR(Temperature Compensated Self Refresh) - Deep Power Down Mode CAS latency of 1, 2, or 3 Packages : 54ball, 0.8mm pitch FBGA -25 ~ 85C Operation 128M SDRAM ORDERING INFORMATION Part Number Clock CAS Frequency Latency Organization Interface HY5S2A6C(L/S)F-S HY5S26CF-S 100MHz 3 4banks x 2Mb x 16 LVCMOS HY5S2A6C(L/S)F-B HY5S26CF-B 66Mhz 2 4banks x 2Mb x 16 LVCMOS Package 54ball FBGA * HY5xxxxxx-B Series can support 40Mhz CL1 and 33Mhz CL1. This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.9 / Sep. 02 HY5S2A6C(L/S)F / HY5S26CF BALL CONFIGURATION 9 8 7 3 2 1 A B C 54 Ball FBGA 0.8 mm Ball Pitch D E F G H J < Bottom View > 7 1 2 3 VSS DQ15 VSSQ A DQ14 DQ13 VDDQ DQ12 DQ11 DQ10 8 9 VDDQ DQ0 VDD B VSSQ DQ2 DQ1 VSSQ C VDDQ DQ4 DQ3 DQ9 VDDQ D VSSQ DQ6 DQ5 DQ8 NC VSS E VDD LDQM DQ7 UDQM CLK CKE F /CAS /RAS /WE NC A11 A9 G BA0 BA1 /CS A8 A7 A6 H A0 A1 A10 VSS A5 A4 J A3 A2 VDD < Top View > Rev. 0.9 / Sep. 02 3 HY5S2A6C(L/S)F / HY5S26CF BALL DESCRIPTION BALL OUT SYMBOL TYPE DESCRIPTION F2 CLK INPUT Clock : The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK F3 CKE INPUT Clock Enable : Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh G9 CS INPUT Chip Select : Enables or disables all inputs except CLK, CKE, UDQM and LDQM G7,G8 BA0, BA1 INPUT Bank Address : Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity H7, H8, J8, J7, J3, J2, H3, H2, H1, G3, H9, G2 A0 ~ A11 INPUT Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA8 Auto-precharge flag : A10 F8, F7, F9 RAS, CAS, WE INPUT Command Inputs : RAS, CAS and WE define the operation Refer function truth table for details F1, E8 UDQM, LDQM INPUT Data Mask:Controls output buffers in read mode and masks input data in write mode A8, B9, B8, C9, C8, D9, D8, E9, E1, D2, D1, C2, C1, B2, B1, A2 DQ0 ~ DQ15 I/O Data Input/Output:Multiplexed data input/output pin A9, E7, J9, A1, E3, J1 VDD/VSS SUPPLY Power supply for internal circuits A7, B3, C7, D3, A3, B7, C3, D7 VDDQ/ VSSQ SUPPLY Power supply for output buffers E2, G1 NC Rev. 0.9 / Sep. 02 - No connection 4 HY5S2A6C(L/S)F / HY5S26CF FUNCTIONAL BLOCK DIAGRAM 2Mbit x 4banks x 16 I/O Low Power Synchronous DRAM TCSR, PASR Extended Mode Register Self refresh logic & timer Internal Row Counter Column decoders DQ0 I/O Buffer & Logic Column pre Decoders Memory Cell Array Sense AMP & I/O Gate WE Column Active Row decoders CAS refresh Row decoders RAS State Machine CS 2Mx16 Bank3 2Mx16 Bank2 2Mx16 Bank1 2Mx16 Bank0 Row decoders CKE Row Pre Decoders Row decoders Row Active CLK DQ15 U/LDQM Column Add Counter bank select A0 BA1 BA0 Rev. 0.9 / Sep. 02 Burst Counter Burst Length A11 Address buffers A1 Address Registers Mode Register CAS Latency Data Out Control 5 HY5S2A6C(L/S)F / HY5S26CF BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 BA0 0 A11 A10 A9 A8 A7 0 0 0 0 0 0 A6 A5 A4 A3 CAS Latency BT A2 A1 A0 Burst Length CAS Latency A6 A5 A4 0 0 0 0 0 1 1 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved CAS Latency Reserved Burst Type A3 Burst Type 0 Sequential 1 Interleave Burst Length Rev. 0.9 / Sep. 02 A2 A1 0 0 0 A0 Burst Length A3 = 0 A3=1 0 1 1 0 1 2 2 0 1 0 4 4 0 1 1 8 8 1 0 0 Reserved Reserved 1 0 1 Reserved Reserved 1 1 0 Reserved Reserved 1 1 1 Full Page Reserved 6 HY5S2A6C(L/S)F / HY5S26CF BASIC FUNCTIONAL DESCRIPTION (Continued) Extended Mode Register BA1 BA0 1 0 A11 A10 A9 A8 A7 A6 A5 0 0 0 0 0 0 0 A4 A3 TCSR A2 A1 A0 PASR TCSR (Temperature Compensated Self Refresh) A4 A3 Temperature o C 0 0 70 0 1 45 1 0 15 1 1 85 PASR (Partial Array Self Refresh) Rev. 0.9 / Sep. 02 A2 A1 A0 Self Refresh Coverage 0 0 0 All Banks 0 0 1 Half of Total Bank (BA1=0) 0 1 0 Quarter of Total Bank (BA1=BA0=0) 0 1 1 Reserved 1 0 0 Reserved 1 0 1 One Eighth of Total Bank (Row Address MSB=0) 1 1 0 One Sixteenth of Total Bank (Row Address 2 MSBs=0) 1 1 1 Reserved 7 HY5S2A6C(L/S)F / HY5S26CF Power Up and Initialization Like a Synchronous DRAM, Low Power SDRAM must be powered up and initialized in a predefined manner. Power must be applied to VDD and VDDQ(simultaneously). The clock signal must be started at the same time. After power up, an initial pause of 200 sec is required. And a precharge all command will be issued to the LP SDRAM. Then, 8 or more Auto refresh cycles will be provided. After the Auto refresh cycles are completed, a mode register set(MRS) command will be issued to program the specific mode of operation (Cas Latency, Burst length, etc.) And a extended mode register set command will be issued to program specific mode of self refresh operation(PASR & TCSR). The following these cycles, the LP SDRAM is ready for normal opeartion. Programming the registers Mode Register The mode register contains the specific mode of operation of the LP SDRAM. This register includes the selection of a burst length(1, 2, 4, 8, Full Page), a cas latency(1, 2, or 3), a burst type. The mode register set must be done before any activate command after the power up sequence. Any contents of the mode register be altered by re-programming the mode register through the execution of mode register set command. Extended Mode Register The extended mode register contains the specific features of self refresh opeartion of the LP SDRAM. This register includes the selection of partial arrays to be refreshed(half array, quarter array, etc.), tempearture range of the device(85, 70, 45, 15) for reducing current consumption during self refresh. The extended mode register set must be done before any activate command after the power up sequence. Any contents of the mode register be altered by re-programming the mode register through the execution of extended mode register set command. Bank(Row) Active The Bank Active command is used to activate a row in a specified bank of the device. This command is initiated by activating CS, RAS and deasserting CAS, WE at the positive edge of the clock. The value on the BA1 and BA0 selects the bank, and the value on the A0-A11 selects the row. This row remains active for column access until a precharge command is issued to that bank. Read and write opeartions can only be initiated on this activated bank after the minimum tRCD time is passed from the activate command. Read The READ command is used to initiate the burst read of data. This command is initiated by activating CS, CAS, and deasserting WE, RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A8-A0 address inputs select the sarting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at the end of the READ burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses.The length of burst and the CAS latency will be determined by the values programmed during the MRS command. Write The WRITE command is used to initiate the burst write of data. This command is initiated by activating CS, CAS, WE and deasserting RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A8-A0 address inputs select the starting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at the end of the WRITE burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses. Rev. 0.9 / Sep. 02 8 HY5S2A6C(L/S)F / HY5S26CF Precharge The Precharge command is used to close the open row in a particular bank or the open row in all banks. When the precharge command is issued with address A10, high, then all banks will be precharged, and If A10 is low, the open row in a particular bank will be precharged. The bank(s) will be available when the minimum tRP time is met after the precharge command is issued. Auto Precharge The Auto Precharge command is issued to close the open row in a particular bank after READ or WRITE operation. If A10 is high when a READ or WRITE command is issued, the READ or WRITE with Auto Precharge is initiated. Burst Termination The Burst Termination is used to terminate the burst operation. This function can be accomplished by asserting a Burst Stop command or a Precharge command during a burst READ or WRITE operation. The Precharge command interrupts a burst cycle and close the active bank, and the Burst Stop command terminates the existing burst operation leave the bank open. Data Mask The Data Mask comamnd is used to mask READ or WRITE data. During a READ operation, When this command is issued, data ouputs are disabled and become high impedance after two clock delay. During a WRITE operation, When this command is issued, data inputs can't be written with no clock delay. Clock Suspend The Clock Suspend command is used to suspend the internal clock of DRAM. During normal access mode, CKE is keeping High. When CKE is low, it freezes the internal clock and extends data Read and Write operations. Power Down The Power Down command is used to reduce standby current. Before this command is issued, all banks must be precharged and tRP must be passed after a precharge command. Once the Power Down command is initiated by keeping CKE low, all of the input buffer except CKE are gated off. Auto Refresh The Auto Refresh command is used during normal operation and is similar to CBR refresh in Coventional DRAMs. This command must be issued each time a refresh is required. When an Auto Refresh command is issued , the address bits is "Don't care", because the specific address bits is generated by internal refresh address counter. Self Refresh The Self Refresh command is used to retain cell data in the Low Power SDRAM. In the Self Refresh mode, the Low Power SDRAM operates refresh cycle asynchronously. The Self Refresh command is initiated like an Auto Refresh command except CKE is disabled(Low). The Low Power SDRAM can accomplish an special Self Refresh operation by the specific modes(TCSR, PASR) programmed in extended mode registers. The Low Power SDRAM can control the refresh rate by the temperature value of TCSR (Temperature Compensated Self Refresh) and select the memory array to be refreshed by the value of PASR(Partial Array Self Refresh). The Low Power SDRAM can reduce the self refresh current(IDD6) by using these two modes. Deep Power Down The Deep Power Down Mode is used to achieve maximum power reduction by cutting the power of the whole memory array of the devices. For more information, see the special operation for Low Power consumption of this data sheet. Rev. 0.9 / Sep. 02 9 HY5S2A6C(L/S)F / HY5S26CF COMMAND TRUTH TABLE Function A10/ AP CKEn-1 CKEn CS RAS CAS WE DQM Mode Register Set H X L L L L X Op Code 2 Extended Mode Register Set H X L L L L X Op Code 2 No Operation H X L H H H X X Device Deselect H X H X X X X X Bank Active H X L L H H X Read H X L H L H Read with Autoprecharge H X L H L H Write H X L H L Write with Autoprecharge H X L H Precharge All Banks H X L Precharge selected Bank H X Burst stop H X Data Write/Output Enable H X Data Mask/Output Disable H X Auto Refresh H H L L L Self Refresh Entry H L L L Self Refresh Exit L H H Precharge Power Down Entry H Precharge Power Down Exit L Clock Suspend Entry H L H L Clock Suspend Exit L H Deep Power Down Entry H L Deep Power Down Exit L H ADDR Row Address BA V Column L V X Column H V L X Column L V L L X Column H V L H L X X H X L L H L X X L V L H H L X X X X X X V X H X X L H X X X X X X X L H H H H X X X X X L H H H H X X X X X L H H H H X X X X X L V V V X X X X X X X L H H X L Note 1 Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high. 2. BA1/BA0 must be issued 0/0 in the mode register set, and 1/0 in the extended mode register set. Rev. 0.9 / Sep. 02 10 HY5S2A6C(L/S)F / HY5S26CF CURRENT STATE TRUTH TABLE (Sheet 1 of 3) Current State idle Row Active Read Write Command CS RAS CAS WE BA0,BA1 A11-A0 L L L L L L L L L L H H L H L H Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X Row Add. Bank Activate BA L H L L BA L H L H L H L L L L L H X L L L L H H X L L H H L H X L H L H L L H L H L H L L L H X L L L H X L L H H X L H L Col Add. Write/WriteAP A10 Col Add. Read/ReadAP BA A10 No Operation X X Device Deselect X X Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X BA Row Add. Bank Activate BA Col Add. Write/WriteAP A10 BA Col Add. Read/ReadAP A10 No Operation X X Device Deselect X X Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X L L L H H L H L BA BA L H L H L H L L L H X L L L H X L L H H X L H L Row Add. Bank Activate Col Add. Write/WriteAP A10 BA Col Add. Read/ReadAP A10 No Operation X X Device Deselect X X Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X L L L H H L H L BA BA L H L H BA L H H X H X H X X X Rev. 0.9 / Sep. 02 Action Description Row Add. Bank Activate Col Add. Write/WriteAP A10 Col Add. Read/ReadAP A10 No Operation X Device Deselect X Set the Mode Register Start Auto or Self Refresh Notes 14 5 No Operation Activate the specified bank and row ILLEGAL 4 ILLEGAL 4 No Operation No Operation or Power Down ILLEGAL ILLEGAL Precharge ILLEGAL Start Write : optional AP(A10=H) Start Read : optional AP(A10=H) 3 3 13,14 13 7 4 6 6 No Operation No Operation ILLEGAL ILLEGAL Termination Burst: Start the Precharge ILLEGAL Termination Burst: Start Write(optional AP) Termination Burst: Start Read(optional AP) 13,14 13 4 8,9 8 Continue the Burst Continue the Burst ILLEGAL ILLEGAL Termination Burst: Start the Precharge 13,14 13 10 ILLEGAL Termination Burst: Start Write(optional AP) 4 8 Termination Burst: Start Read(optional AP) 8,9 Continue the Burst Continue the Burst 11 HY5S2A6C(L/S)F / HY5S26CF CURRENT STATE TRUTH TABLE (Sheet 2 of 3) Current State Read with Auto Precharge Write with Auto Precharge Precharging Row Activating Command CS RAS CAS WE BA0,BA1 A11-A0 L L L L L L L L L H L L H H L L H L H L L H L H L H L L L L L H X L L L L H H X L L H H L H X L H L H L L H L H L H L L L H X L L L H X L L H H X L H L Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X Bank Activate Row Add. BA Col Add. Write/WriteAP BA A10 Col Add. Read/ReadAP BA A10 No Operation X X Device Deselect X X Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X BA Row Add. Bank Activate BA Col Add. Write/WriteAP A10 BA Col Add. Read/ReadAP A10 No Operation X X Device Deselect X X Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X L L L H H L H L BA BA L H L H BA L H H H X H X X X X L L L L L L L L L H L L H H L L H L H L L H L H L H H H H X X X Rev. 0.9 / Sep. 02 Row Add. Bank Activate Col Add. Write/WriteAP A10 Col Add. Read/ReadAP A10 No Operation X X Device Deselect Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X BA Row Add. Bank Activate BA Col Add. Write/WriteAP A10 BA Col Add. Read/ReadAP A10 No Operation X X X X Action Description Device Deselect ILLEGAL Notes ILLEGAL 13,14 13 4,12 4,12 12 ILLEGAL 12 ILLEGAL ILLEGAL ILLEGAL Continue the Burst Continue the Burst ILLEGAL ILLEGAL 13,14 13 4,12 4,12 12 ILLEGAL 12 ILLEGAL ILLEGAL ILLEGAL Continue the Burst Continue the Burst ILLEGAL ILLEGAL No Operation: Bank(s) idle after tRP ILLEGAL 13,14 13 ILLEGAL 4,12 4,12 ILLEGAL 4,12 No Operation: Bank(s) idle after tRP No Operation: Bank(s) idle after tRP ILLEGAL ILLEGAL ILLEGAL 13,14 13 4,12 ILLEGAL ILLEGAL 4,11,12 4,12 ILLEGAL 4,12 No Operation: Row Active after tRCD No Operation: Row Active after tRCD 12 HY5S2A6C(L/S)F / HY5S26CF CURRENT STATE TRUTH TABLE (Sheet 3 of 3) Current State Write Recovering Write Recovering with Auto Precharge Refreshing Mode Register Accessing Command CS RAS CAS WE BA0,BA1 L L L L L L L L L H L L H H L L H L H L L H L H L H H H H X X X L L L L L L L L L H L L H H L L H L H L L H L H L H H H H X X X L L L L L L L L L H L L H H L L H L H L L H L H L H L L L L L H X L L L L H H X L L H H L H X L H L H L L H L H L H H H H X X X Rev. 0.9 / Sep. 02 A11-A0 Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X Bank Activate Row Add. BA Col Add. Write/WriteAP BA A10 Col Add. Read/ReadAP BA A10 No Operation X X X X Device Deselect Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X BA Row Add. Bank Activate BA Col Add. Write/WriteAP A10 BA Col Add. Read/ReadAP A10 No Operation X X X X Device Deselect Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X Row Add. Bank Activate BA Col Add. Write/WriteAP BA A10 BA Col Add. Read/ReadAP A10 No Operation X X Device Deselect X X Mode Register Set OP Code Auto or Self Refresh X X Precharge BA X BA Row Add. Bank Activate BA Col Add. Write/WriteAP A10 BA Col Add. Read/ReadAP A10 No Operation X X X X Action Description Device Deselect ILLEGAL ILLEGAL ILLEGAL ILLEGAL Notes 13,14 13 4,13 4,12 Start Write: Optional AP(A10=H) Start Read: Optional AP(A10=H) No Operation: Row Active after tDPL No Operation: Row Active after tDPL ILLEGAL 9 ILLEGAL 13,14 13 4,13 4,12 4,12 ILLEGAL 4,9,12 ILLEGAL ILLEGAL ILLEGAL No Operation: Precharge after tDPL No Operation: Precharge after tDPL ILLEGAL ILLEGAL 13,14 13 13 13 13 ILLEGAL 13 ILLEGAL ILLEGAL ILLEGAL No Operation: idle after tRC No Operation: idle after tRC ILLEGAL ILLEGAL 13,14 13 13 13 13 ILLEGAL 13 ILLEGAL ILLEGAL ILLEGAL No Operation: idle after 2 clock cycles No Operation: idle after 2 clock cycles 13 HY5S2A6C(L/S)F / HY5S26CF Note : 1. H: Logic High, L: Logic Low, X: Don't care, BA: Bank Address, AP: Auto Precharge. 2. All entries assume that CKE was active during the preceding clock cycle. 3. If both banks are idle and CKE is inactive, then in power down cycle 4. Illegal to bank in specified states. Function may be legal in the bank indicated by Bank Address, depending on the state of that bank. 5. If both banks are idle and CKE is inactive, then Self Refresh mode. 6. Illegal if tRCD is not satisfied. 7. Illegal if tRAS is not satisfied. 8. Must satisfy burst interrupt condition. 9. Must satisfy bus contention, bus turn around, and/or write recovery requirements. 10. Must mask preceding data which don't satisfy tDPL. 11. Illegal if tRRD is not satisfied 12. Illegal for single bank, but legal for other banks in multi-bank devices. 13. Illegal for all banks. 14. Mode Register Set and Extended Mode Register Set is same command truth table except BA1. Rev. 0.9 / Sep. 02 14 HY5S2A6C(L/S)F / HY5S26CF CKE Enable(CKE) Truth TABLE CKE Current State Previous Current CS Cycle Cycle Self Refresh Power Down Deep Power Down All Banks Idle Any State other than listed above Command RAS CAS WE Action BA0, A11BA1 A0 H L X H X H X X X X X X X X X X L H L H H H X X L L L L H L H H H L X H L L L X X H H H L X X X H L X X X X L X X X X X X X X X X X X X X X X X L L H L L H L X H L L X X X X X X X X X X X X X X X X X X X X X X X X X X X X X H H H H H H H H H H L H H H H H H L L L L L X H H L L L L H L L L L X X X H L L L X H L L L X X X X H L L X X H L L X X X X X H L X X X H L X X H L L L H L X X X X X X X X X X X X Notes INVALID Exit Self Refresh with Device Deselect Exit Self Refresh with No Operation ILLEGAL ILLEGAL ILLEGAL INVALID Power Down mode exit, all banks idle ILLEGAL X X X 2 2 2 1 2 2 Maintain Power Down Mode INVALID Deep Power Down mode exit Maintain Deep Power Down Mode Refer to the idle State section of the Current State Truth Table Refer to the idle State section of the Current State Truth Table X X X 2 Maintain Self Refresh X X Auto Refresh Op Code Mode Register Set X X Op Code X X X X 1 2 Entry Self Refresh 1 5 3 3 3 4 3 3 3 4 Mode Register Set Power Down 4 Refer to operations of the Current State Truth Table Begin Clock Suspend next cycle Exit Clock Suspend next cycle Maintain Clock Suspend Note : 1. For the given current state CKE must be low in the previous cycle. 2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting power down mode, a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high. 3. The address inputs depend on the command that is issued. 4. The Precharge Power Down mode, the Self Refresh mode, and the Mode Register Set can only be entered from the all banks idle state. 5. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting deep power down mode, a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high and is maintained for a minimum 200sec. Rev. 0.9 / Sep. 02 15 HY5S2A6C(L/S)F / HY5S26CF ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA -25 ~ 85 o C Storage Temperature TSTG -55 ~ 125 o C Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 3.6 V Voltage on VDD relative to VSS VDD -1.0 ~ 2.6 V Voltage on VDDQ relative to VSS VDDQ -1.0 ~ 2.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 1 W Soldering Temperature . Time TSOLDER 260 . 10 oC . Sec Note : Operation at above absolute maximum rating can adversely affect device reliability. DC OPERATING CONDITION (TA= -25 to 85 ) Parameter Symbol Min Typ Max Unit Note Power Supply Voltage VDD 1.65 1.8 1.95 V 1 Power Supply Voltage VDDQ 1.65 1.8 1.95 V 1, 2 Input High Voltage VIH 0.8*VDDQ - V 1, 2 Input Low Voltage VIL -0.3 - V 1, 2 VDDQ+0.3 0.3 Note : 1. All Voltages are referenced to VSS = 0V 2. VDDQ must not exceed the level of VDD AC OPERATING TEST CONDITION (TA= -25 to 85, VDD = 1.8V, VSS = 0V) ) Parameter AC Input High/Low Level Voltage Input Timing Measurement Reference Level Voltage Input Rise/Fall Time Output Timing Measurement Reference Level Voltage Output Load Capacitance for Access Time Measurement Symbol Value Unit VIH / VIL 0.95*VDDQ/0.2 V Vtrip 0.5*VDDQ V tR / tF 1 ns Voutref 0.5*VDDQ V CL pF Note 1 Note 1 Rev. 0.9 / Sep. 02 16 HY5S2A6C(L/S)F / HY5S26CF CAPACITANCE (TA=25 C, f=1MHz, HY5xxxxxxF Seires) Parameter Pin Input capacitance Symbol -H -/P/S/B Min Max Min Max Unit CLK CI1 2.5 4.0 2.5 4.0 pF A0~A11, BA0, BA1, CKE, CS, RAS, CAS, WE, UDQM, LDQM CI2 1.5 4.0 1.5 4.0 pF 6.0 pF Data input/output capacitance DQ0 ~ DQ15 CI/O 4.0 6.0 4.0 DC CHARACTERISTICS I (TA= -25 to 85) Parameter Input Leakage Current Symbol ILI Output Leakage Current ILO Min Max Unit Note -1 1 A 1 -1.5 1.5 A 2 Output High Voltage VOH 0.95*VDDQ - V 3 Output Low Voltage VOL - 0.2 V 4 Note : 1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V. 2. DOUT is disabled. VOUT= 0 to 1.95V. 3. IOUT = - 0.1mA 4. IOUT = + 0.1mA Rev. 0.9 / Sep. 02 17 HY5S2A6C(L/S)F / HY5S26CF DC CHARACTERISTICS II (TA= -25 to 85) Speed Parameter Symbol Test Condition -S Unit Note 1 -B IDD1 Burst length=1, One bank active tRC tRC(min), IOL=0mA 55 mA IDD2P CKE VIL(max), tCK = 15ns 0.5 mA IDD2PS CKE VIL(max), tCK = 0.5 mA IDD2N CKE VIH(min), CS VIH(min), tCK = 15ns Input signals are changed one time during 2clks. All other pins VDD-0.2V or 0.2V 10 IDD2NS CKE VIH(min), tCK = Input signals are stable. 5 IDD3P CKE VIL(max), tCK = 15ns 3 IDD3PS CKE VIL(max), tCK = 3 IDD3N CKE VIH(min), CS VIH(min), tCK = 15ns Input signals are changed one time during 2clks. All other pins VDD-0.2V or 0.2V 20 IDD3NS CKE VIH(min), tCK = Input signals are stable. 15 Burst Mode Operating Current IDD4 tCK tCK(min), IOL=0mA All banks active 55 mA Auto Refresh Current IDD5 tRC tRC(min), All banks active 130 mA Self Refresh Current IDD6 CKE 0.2V Standby Current in Deep Power Down Mode IDD7 CKE 0.2V Operating Current Precharge Standby Current in Power Down Mode Precharge Standby Current in Non Power Down Mode Active Standby Current in Power Down Mode Active Standby Current in Non Power Down Mode mA mA mA mA 50 1 2 A Note : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2. See the tables of next page for more specific IDD6 current values. - Normal Power : HY5S2A6CF Series - Low Power : HY5S2A6CLF Series - Super Low Power : HY5S2A6CSF Series - Standard Part : HY5S26CF Series Rev. 0.9 / Sep. 02 18 HY5S2A6C(L/S)F / HY5S26CF DC CHARACTERISTICS III - Normal (IDD6) (VDD=1.8V, VDDQ=1.8V, VSS=0V) Memory Array Temp. ( oC) 4 Banks 2 Banks 1 Bank 85 250 180 140 A 70 220 150 130 A 160 120 90 A -25~45 Unit * HY5S2A6CF Series DC CHARACTERISTICS III - Low Power (IDD6) (VDD=1.8V, VDDQ=1.8V, VSS=0V) Memory Array Temp. ( oC) 4 Banks 2 Banks 1 Bank 85 220 160 120 A 70 200 130 100 A 130 100 80 A -25~45 Unit * HY5S2A6CLF Series DC CHARACTERISTICS III - Super Low Power (IDD6) (VDD=1.8V, VDDQ=1.8V, VSS=0V) Memory Array Temp. ( oC) 4 Banks 2 Banks 1 Bank 85 180 140 100 A 70 170 110 80 A 100 80 70 A -25~45 Unit * HY5S2A6CSF Series DC CHARACTERISTICS III - Standard part (IDD6) (VDD=1.8V, VDDQ=1.8V, VSS=0V) Temp. ( oC) Memory Array -25~85 < 450 4 Banks Unit A * HY5S26CF Series Rev. 0.9 / Sep. 02 19 HY5S2A6C(L/S)F / HY5S26CF AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) Parameter System Clock Cycle Time Symbol S B Min Max Min Max CAS Latency=3 tCK3 10 1000 15 1000 CAS Latency=2 tCK2 12 15 Unit Note ns ns Clock High Pulse Width tCHW 3 - 3.5 - ns 1 Clock Low Pulse Width tCLW 3 - 3.5 - ns 1 Access Time From CAS Latency=3 tAC3 Clock CAS Latency=2 tAC2 - 7 - 9 ns 2 - - - 9 ns Data-out Hold Time tOH 3 - 3 - ns Data-Input Setup Time tDS 2 - 2 - ns 1 Data-Input Hold Time tDH 1 - 1 - ns 1 Address Setup Time tAS 2 - 2 - ns 1 Address Hold Time tAH 1 - 1 - ns 1 CKE Setup Time tCKS 2 - 2 - ns 1 CKE Hold Time tCKH 1 - 1 - ns 1 Command Setup Time tCS 2 - 2 - ns 1 Command Hold Time tCH 1 - 1 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1 - 1 - ns 3 6 3 9 ns 3 6 3 9 ns CLK to Data Output CAS Latency=3 tOHZ3 in High-Z Time CAS Latency=2 tOHZ2 Note : 1. Assume tR / tF (input rise and fall time) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter. 2. Access time to be measured with input signals of 1v/ns edge rate, from 0.8v to 0.2v. If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter. Rev. 0.9 / Sep. 02 20 HY5S2A6C(L/S)F / HY5S26CF AC CHARACTERISTICS II (AC operating conditions unless otherwise noted) Parameter Symbol S B Min Max Min Max Unit Note RAS Cycle Time tRC 90 - 90 - ns RAS to CAS Delay tRCD 30 - 30 - ns RAS Active Time tRAS 60 RAS Precharge Time tRP 30 - 30 - ns RAS to RAS Bank Active Delay tRRD 20 - 30 - ns CAS to CAS Delay tCCD 1 - 1 - tCK Write Command to Data-In Delay tWTL 0 - 0 - tCK Data-in to Precharge Command tDPL 2 - 2 - tCK Data-In to Active Command tDAL DQM to Data-Out Hi-Z tDQZ 2 - 2 - tCK DQM to Data-In Mask tDQM 0 - 0 - tCK MRS to New Command tMRD 2 - 2 - tCK CAS Latency=3 tPROZ3 3 - 3 - tCK CAS Latency=2 tPROZ2 2 Precharge to Data Output High-Z 100K 60 100K ns 2clk + 30ns 2 tCK Power Down Exit Time tDPE 1 - 1 - tCK Self Refresh Exit Time tSRE 1 - 1 - tCK Refresh Time tREF - 64 - 64 ms 1 Note : 1. A new command can be given tRC after self refresh exit. Rev. 0.9 / Sep. 02 21 HY5S2A6C(L/S)F / HY5S26CF Special Operation for Low Power Consumption Deep Power Down Mode Deep Power Down Mode is an operating mode to achieve maximum power reduction by cutting the power of the whole memory array of the devices. Data will not be retained once the device enters Deep Power Down Mode. Full initialization is required when the device exits from Deep Power Down Mode. Truth Table Current State Command CKEn-1 CKEn CS RAS CAS WE Idle Deep Power Down Entry H L L H H L Deep Power Down Deep Power Down Exit L H X X X X Deep Power Down Mode Entry The Deep Power Down Mode is entered by having /CS and /WE held low with /RAS and /CAS high at the rising edge of the clock, while CKE is low. The following diagram illustrates deep power down mode entry. CLK CKE CS RAS CAS WE tRP Precharge if needed Rev. 0.9 / Sep. 02 Deep Power Down Entry 22 HY5S2A6C(L/S)F / HY5S26CF Deep Power Down Mode (Continued) Deep Power Down Mode Exit Sequence The Deep Power Down mode is exited by asserting CKE high. After the exit, the following sequence is needed to enter a new command. 1. Maintain NOP input conditions for a minimum of 200sec 2. Issue precharge commands for all banks of the device 3. Issue 8 or more auto refresh commands 4. Issue a mode register set command to initialize the mode register 5. Issue an extended mode register set command to initialize the extended mode register The following timing diagram illustrates deep power down mode exit sequence. CLK CKE CS RAS CAS WE 200s Deep Power Down exit Rev. 0.9 / Sep. 02 tRC tRP All banks precharge Auto refresh Auto refresh Mode Register Set Extended Mode Register Set New Command Accepted Here 23 HY5S2A6C(L/S)F / HY5S26CF PACKAGE INFORMATION 54 Ball 0.8mm pitch 8.3mm x 10.5mm FBGA (HY5xxxxxxF Series) 0.80 10.50 6.40 0.450 0.80 6.40 8.30 Rev. 0.9 / Sep. 02 0.340 1.070 24