TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637 2N3637L 2N3637UB JANSM - 3K Rads (Si) JANSD - 10K Rads (Si) JANSP - 30K Rads (Si) JANSL - 50K Rads (Si) JANSR - 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol 2N3634* 2N3636* 2N3635* 2N3637* Unit Collector-Emitter Voltage VCEO 140 175 Vdc Collector-Base Voltage VCBO 140 175 Vdc Emitter-Base Voltage VEBO 5.0 5.0 Vdc IC 1.0 1.0 Adc Collector Current Total Power Dissipation UB: @ TA = +25C @ TC = +25C @ TC = +25C Operating & Storage Junction Temperature Range PT ** 1.0 5.0 1.5 W W W TJ, Tstg -65 to +200 C TO-5* 2N3634L, 2N3635L 2N3636L, 2N3637L * Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices. ** Consult 19500/357 for De-Rating curves. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 140 175 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3634, 2N3635 2N3636, 2N3637 Collector-Base Cutoff Current VCB = 100Vdc VCB = 140Vdc VCB = 175Vdc Vdc ICBO 100 10 10 Adc Adc Adc Emitter-Base Cutoff Current VEB = 3.0Vdc VEB = 5.0Vdc IEBO 50 10 Adc Adc Collector-Emitter cutoff Current VCE = 100Vdc ICEO 10 Adc T4-LDS-0065 Rev. 1 (081247) 2N3634, 2N3635 2N3636, 2N3637 TO-39* (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637 3 PIN 2N3634UB, 2N3635UB 2N3636UB, 2N3637UB Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS Symbol Min. Max. Unit (1) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3634, 2N3636 25 45 50 50 30 150 hFE IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 2N3635, 2N3637 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc 55 90 100 100 60 0.3 0.6 Vdc 0.65 0.8 0.9 Vdc VCE(sat) Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc VBE(sat) 300 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 30mAdc, VCE = 30Vdc, f = 100MHz Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Short-Circuit Input Impedance IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634, 2N3636 2N3635, 2N3637 |hfe| 1.5 2.0 8.0 8.5 2N3634, 2N3636 2N3635, 2N3637 hfe 40 80 160 320 2N3634, 2N3636 2N3635, 2N3637 hie 100 200 600 1200 Small-Signal Open-Circuit Input Impedance IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz hoe 200 s Output Capacitance VCB = 20Vdc, IE = 0, 100 kHz f 1.0MHz Cobo 10 pF Input Capacitance VEB = 1.0Vdc, IC = 0, 100 kHz f 1.0MHz Cibo 75 pF NF 5.0 3.0 3.0 dB Noise Figure VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0k f = 100Hz f = 1.0kHz f = 10kHz (1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0% T4-LDS-0065 Rev. 1 (081247) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 SAFE OPERATING AREA DC Tests TC = 25C, 1 Cycle, t = 1.0s Test 1 VCE = 100Vdc, IC = 30mAdc VCE = 130Vdc, IC = 20mAdc 2N3634, 2N3635 2N3636, 2N3637 Test 2 VCE = 50Vdc, IC = 95mAdc Test 3 VCE = 5.0Vdc, IC = 1.0Adc T4-LDS-0065 Rev. 1 (081247) Page 3 of 3