TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
T4-LDS-0065 Rev. 1 (081247) Page 1 of 3
DEVICES LEVELS
2N3634 2N3635 2N3636 2N3637 JANSM – 3K Rads (Si)
2N3634L 2N3635L 2N3636L 2N3637L JANSD – 10K Rads (Si)
2N3634UB 2N3635UB 2N3636UB 2N3637UB JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3634*
2N3635* 2N3636*
2N3637* Unit
Collector-Emitter Voltage VCEO 140 175 Vdc
Collector-Base Voltage VCBO 140 175 Vdc
Emitter-Base Voltage VEBO 5.0 5.0 Vdc
Collector Current IC 1.0 1.0 Adc
Total Power Dissipation
UB:
@ TA = +25°C
@ TC = +25°C
@ TC = +25°C PT ** 1.0
5.0
1.5
W
W
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
2N3634, 2N3635
2N3636, 2N3637 V(BR)CEO
140
175 Vdc
Collector-Base Cutoff Current
VCB = 100Vdc
VCB = 140Vdc
VCB = 175Vdc
2N3634, 2N3635
2N3636, 2N3637
ICBO
100
10
10
ηAdc
μAdc
μAdc
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 5.0Vdc
IEBO
50
10
ηAdc
μAdc
Collector-Emitter cutoff Current
VCE = 100Vdc ICEO 10
μAdc
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
T4-LDS-0065 Rev. 1 (081247) Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3634, 2N3636 25
45
50
50
30
150
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3635, 2N3637 hFE 55
90
100
100
60
300
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
VCE(sat) 0.3
0.6 Vdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
VBE(sat)
0.65 0.8
0.9 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 30mAdc, VCE = 30Vdc, f = 100MHz 2N3634, 2N3636
2N3635, 2N3637 |hfe| 1.5
2.0 8.0
8.5
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634, 2N3636
2N3635, 2N3637 hfe 40
80 160
320
Small-Signal Short-Circuit Input Impedance
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634, 2N3636
2N3635, 2N3637 hie 100
200 600
1200 Ω
Small-Signal Open-Circuit Input Impedance
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz hoe 200
μs
Output Capacitance
VCB = 20Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Cobo 10 pF
Input Capacitance
VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz Cibo 75 pF
Noise Figure
VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0kΩ
f = 100Hz
f = 1.0kHz
f = 10kHz
NF
5.0
3.0
3.0
dB
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
T4-LDS-0065 Rev. 1 (081247) Page 3 of 3
SAFE OPERATING AREA
DC Tests
TC = 25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 100Vdc, IC = 30mAdc
VCE = 130Vdc, IC = 20mAdc
2N3634, 2N3635
2N3636, 2N3637
Test 2
VCE = 50Vdc, IC = 95mAdc
Test 3
VCE = 5.0Vdc, IC = 1.0Adc
