ULTRA LOW Ron SWITCHING Sean SILICON EPITAXIAL JUNCTION 2N5434 N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 504 230 MAK 195 MAX. LOW Ros 5 Ohms MAK LOW Cgp 15 pfd 180 MAX. ELECTRICAL DATA assoLUTE MAXIMUM RATINGS 500 MIN, PARAMETER UNITS Drain to Gate Voltage BVoco| 25 Volts T0-52 | |] Gate to Source Voltage BVaso | -25 Volts 2 e077 EOS Peak Forward Gate Current Ice | 100, mA . Peak Drain Current Ip 400 mA pe Oe As Power Dissipation (free air) Po 400 mw 050 + .005 Derating Factor (free air) Dr 2.3 | mwi'c Junction Temp. (Oper, & Store) Tt -65C t+ 200C DAS MAX. GATEICASE Lead Temp, (@ 1/16" 1/32" tromcase)] TL 300C for 10 sec. sume ELECTRICAL CHARACTERISTICS: Ta = 25C (UNLESS OTHERWISE STATED) PARAMETERS AND 2N5432 2N5433 2N5434 CONDITIONS SYMBOL UNITS Min. | Typ. | Max. |Min. | Typ. | Max. | Min. Typ. | Max. Gate Leakage Current VGs=-15V Vos=0 icss = = 0.2 = = 0.2) = = 0.2 nA Gate Leakage Current VGs=-15V VOs=0 Ta=150C Iess - - 02] - - O2/ - - 0.2 MA Drain Cutoff Current VGS=-10V Vos=5V \OOFF ~ - 0.2] - - o2) = - 0.2 ny Drain Cutoff Current Ves=-10V Vos=5V Ta=100C | ipore | a2] - - O22) - - 0.2 LA Pinch Of Voltage Vos=5V !DS=3nA VPO 4.0 7.0 10 3.0 5.0] 9.0 1.0 25} 4.0 Volts On Resistance Ves=0 ID=10mA Ros 2.0 40] 5.0 - = 7.0 = - 10 Ohms Drain-Source On Voltage ID=10mA VGs=0 Vos(On) | af 50 - - 70 - |100 mv Drain Current* . : Vos*15V Ves=0 loss iso |] - 100 |; - - <n _ mA Input Capacitance Ves=-10V Vos=0 Com - - 30 | - - 30 | - - 30 pid Reverse Transfer Capacitance Veo=-10V Cres =- ~ 15 = = 15 = - 15 pfd Turn On Time! Td+Tr - = 5 | - - 5 ~ 5 ns Turn Off Time! Ts+Tt o = ae, || ~ _ 36 | - =~ 36 nS * Pulse Measurement. Pulsewidth 300s Duty Cycle 3%. "As = 50.9, Von = 1.5V, V pulse = -12V, loon) = 10 mA CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779fo; NORMALIZED TO 25C VALUE JUNCTION CAPACITANCE (ptd) 2N5432 Thru 2N5434 Cms00 TYPICAL CHARACTERISTICS ON RESISTANCE VS, TEMPERATURE GATE LEAKAGE CURRENT VS. TEMPERATURE 1o00 10 15 200 70 100 30 1.0 Igy NORMALIZED TO 25C VALUE ~ oe A oe . l O7 on o6 : 20 Qo +25 +50 +75 +100 +120 25 30 40 50 60 70 a0 70 100 TEMPERATURE ("C) TEMPERATURE (C) RON INCREASES = 0.7%/"C ess DOUBLES EACH 10C ON RESISTANCE VS. GATE VOLTAGE | 38s 2 BS JUNCTION CAPACITANCE VS. VOLTAGE $0 j 5 AA | 35 woo 4s TEMP = 25C 3 Temp = 25C - FREQ = 140 kHz < 7 loe=10 mA " 25 o 15 e i o 20 e 5 mM Ron = Ros 15 2 ht 1 Ves = Ve / 10 5 2.0 2 5 8 if a 1s 7 o 1.0 | 0 5 10 1 70 25 30 o 02 4 06 0.8 Yas Ratio JUNCTION VOLTAGE Ve CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779