ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS 1µAVDS=20V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS
=± 12V, VDS
=0V
Gate-Source Threshold Voltage VGS(th) 0.7 V ID=250µA, VDS
= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.18
0.24 Ω
ΩVGS
=4.5V, ID=0.93A
VGS
=2.7V, ID=0.47A
Forward Transconductance (3) gfs 1.3 S VDS=10V,ID=0.47A
DYNAMIC (3)
Input Capacitance Ciss 160 pF VDS=15 V, VGS=0V,
f=1MHz
Output Capacitance Coss 50 pF
Reverse Transfer Capacitance Crss 30 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.4 ns
VDD
=10V, ID=0.93A
RG=6.2Ω, RD=11Ω
(refer to test
circuit)
Rise Time tr4.2 ns
Turn-Off Delay Time td(off) 7.8 ns
Fall Time tf4.2 ns
Total Gate Charge Qg3.4 nC VDS=16V,VGS=4.5V,
ID=0.93A
(refer to test
circuit)
Gate-Source Charge Qgs 0.41 nC
Gate-Drain Charge Qgd 0.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.95 V TJ=25°C, IS=0.93A,
VGS
=0V
Reverse Recovery Time (3) trr 12.9 ns TJ=25°C, IF=0.93A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 5.2 nC
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
60
ZXM61N02F
PROVISIONAL ISSUE A - MAY 1999