2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A iconix n-channel JFETs designed for. . +F Siliconix Performance Curves NT *JEDEC registered data. NOTES: e See Section 5 eo @ Ultra-High Input BENEFITS ege Impedance Amplifiers Low Power Ipss < 90 uA (2N4117) Electrometers @ Minimum Circuit Loading Tr I <1 pA (2N4117A Series) pH Meters GSS Smoke Detectors o TO-72 *ABSOLUTE MAXIMUM RATINGS (25C) See Section 7 Gate-Drain or Gate-Source Voltage (Note 1) ........ -40V Gate-Current ...... 0.0.0 cc cece cece ee eevee 50 mA Total Device Dissipation (Derate 2 mW/C to 175C) ..........00006e 300 mw Storage Temperature Range.............. -65 to +175C Lead Temperature (1/16 from case for 10 seconds).............. 255C s *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N4117 2N4118 2N4119 Characteristic 2N4117A 2N4118A 2N4119A_} Unit Test Conditions Min | Max Min | Max | Min | Max i Gate Reverse Current -10 =10 ~10 | pA _ _ 2 5 'Gss 2N4117 Series Only -25 -25 -25 nA Vas = -20 V, Vps = 0 150C 3it Gate Reverse Current 71 <1 1 pA L3 A 'GSS_-2N4117A Series Only DS 25 25 | na | GS=-20. Vos =0 150C | 5 | 1 | BVgss Gate-Source Breakdown Voltage ~40 -40 -40 v Ig =-1HA, Vps =0 6| | Vastort) Gate Source Cutoff Voltage -o6|-18 | -1| -3] -2] 6 Vps=10V.Ip=1nA 7} | ipss Neen Drain Current 0.03! 0.09 | 0.08]0.24 | 0.20] 0.60 | ma| Vpg=10V, Vgg=0 e[ ofan Sammon Source Fae, 70] 210 | 80] 280 | 100 220 TY Common-Source Output umho ~TkHe 9 N Sos Conductance 3 5 10 Vps = 10V, Vgg=0 10 M CG Common-Source Input 3 3 3 1 | iss Capatitance i{ Cc pF f= 1MHz Crs Common Source Reverse Transfer 15 15 15 NT 1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged. 2. This parameter is measured during a 2 ms interval 100 ms after power is applied. (Not a JEDEC condition.) 3-20 1979 Siliconix incorporatedAPPLICATIONS Yoo Amplifier Design Chart Vpp Rs lop | Rp | eo Max v) tery | SS | quay | err | wok vy | AY 2N4117 10 10 45 | 120 5.7 270 | 15 12 20 10 45 360 15 420 4 17 30 10 45 620 1 22 Vop=+15 | 519 | Source as | 0 8 | 097 Vsg = -15 Follower 2N4118 36 | 06 2.2 10 8.2 120 50 | 02 3.5 20 8.2 120 | 120 1 75 30 8.2 120 | 180 2 10 Vop=+15 | 519 | Source 35 0 8 |097 Vss = -15 Follower 2N4119 20 56 7o | 150 1 10 5 uF* 240 3 7 30 56 | at5V 70 330 1 | 17-23 20 6.8 300 | 27 1 1.8 30 68 300 | 68 2 4.5 Vpp = +15 | 5619 | Source 40 o| 10 {097 Vss = -15 Follower AC Amplifier Bs 3-21 1979 Siliconix incorporated le V6LLUNZ 6LLIVNZ VSLLUNZ SLLYNZ VWZLLYNZ ZLELYNZ xXIUODIGATE ALSO BACKSIDE CONTACT S AND D ARE SYMMETRICAL 0.017 10.432} 9.017 : (0432) ALL DIMENSIONS IN INCHES JALL DIMENSIONS iN MILLIMETERS) n-channel JFET designed for... Ultra-High Input Impedance Amplifiers Electrometers pH Meters Smoke Detectors TYPE PACKAGE Single TO-72 Dual TO-78 Single Chip Dual Chip PERFORMANCE CURVES (25C unless otherwise noted) Output Characteristic Ip DRAIN CURRENT WA)V o 12 3 4 6 7 8 98 10 Vos DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics VDs* Ip DRAIN CURRENT WA) & 8 8 nN eS 0 -02 -04 -06 1000 -4,2 Vas GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics 8 a 8 3 2 > s s 2 -0.6 Vas GATE-SOURCE VOLTAGE (VOLTS) 0.2 +04 0.8 -1.0 -1.2 Qf, FORWARD TRANSCONDUCTANCE (umhos} Output Characteristic 200 Ves 20 Ip DRAIN CURRENT WA) ee ee 858338383 6 8 8 8 12 4 Vps' DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics = = x x 8 s 3 S$ ip DRAIN CURRENT uA} $ a -0.4 -0.8 - - VGs GATE-SOURCE VOLTAGE (VOLTS} Transconductance Characteristics g 3 8 3 g 38 Vs GATE-SOURCE VOLTAGE (VOLTS) 0.4 16 4, ~ FORWARD TRANSCONDUCTANCE (umhos) Ip ~ DRAIN CURRENT WA) Ip DRAIN CURRENT (A} Sf, ~~ FORWARD TRANSCONDUCTANCE (umhos) BENEFITS: @ Low Power Ipsg < 90 uA (2N4117) e@ High Input impedance Ig < 1 pA (2N5906-09) PRINCIPAL DEVICES 2N4117-9, 2N4117A-9A, VCR7N 2N5902-9 2N4117CHP-9CHP, 2N4117ACHP-SACHP, VCR7NCHP 2NS590SCHP, 2N5909CHP Output Characteristic ~eerpneeweag $388 $8 828 88 o 41 2 3 5 6 7 & 9 10 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics 800 =10 Q Ss 3 2 s 8 0 4 -2 -3 -4 5 Vs GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics : 3 g g 8 8 8 > 3 1 ~2 3 4 5 Vas ~ GATE-SOURCE VOLTAGE (VOLTS) 5-29 1979 Siliconix incorporated iN xXIUOSDINT iconix tnss SATURATION DRAIN CURRENT {mA} CURRENT (pA) Drain Current & Transconductance vs Gate-Source Cutoff Voltage 2.0 300 Vos" 10V Vgs=0 fs @ f= 1 kHz Vasiott) @ tp = 19 0.8 O4 Q o 0 2 -4 -6 -3 Vesiott) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Leakage Currents vs Ambient Temperature T TEMPERATURE (C) {soywr) FONVLONGNOOSNVEL GY VAMOS 8 PERFORMANCE CURVES (Cont'd) (25C unless otherwise noted) ON Resistance & Output Conductance vs Gate-Source Cutoff Voltage 10 10K Qos @ Vig = 20 V, Vag #0, f TkHz @ tp = 10 vA, Veg 20 @Vps=10V, =1nd g 3 > o {SWHO) SONVLSISIH NO 30HNOS-Nivua SA2 dos OUTPUT CONDUCTANCE {umhos) Nn 0 Qo 0 ~2 -4 -6 -8 Vestott) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Leakage Currents vs Drain-Gate Voltage CURRENT {pA} 0 10 20 30 40 50 Vpg DRAIN-GATE VOLTAGE (VOLTS) Equivalent Input Noise Voltage and Noise Current vs Frequency 13 1 =a Vos730V 10 z Ro Ipgg = 0.047 mA z! I < z S 8 w 100 en @Ip= 0.1 Ipss aut 10-14 g 9 4 rT Se z tit 3 3 ~ is a 2 en @ Ip Ipss TT 4 a a = -15 & 5 10 10 2 3 1 = = in Ip = ings. iz a in @ Ip = 0.1 Iggg 1 1016 10 100 1K 10K 100K f - FREQUENCY (Hz) Common-Source Forward Transconductance vs Drain Current Vos = 10 fai 9fs FORWARD TRANSCONDUCTANCE (umbos} 1.0 10 100 1000 Ip ORAIN CURRENT (pA} Common-Source Output Conductance vs Drain Current =-45 =20V Sox OUTPUT CONDUCTANCE {xumbos) 10 100 Ip DRAIN CURRENT (uA} 5-30 1979 Siliconix incorporated