IKW50N60T
TrenchStop®Series q
IFAG IPC TD VLS 7 Rev. 2.5 12.06.2013
E,SWITCHING ENERGY LOSSES
0A 20A 40A 60A 80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
Ets*
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
E,SWITCHING ENERGY LOSSES
Ets*
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
IC,COLLECTOR CURRENT RG,GATE RESISTOR
Typical switching energy losses
as a function of collector current
(inductive load, TJ= 175°C,
VCE = 400V, VGE = 0/15V, RG= 7Ω,
Dynamic test circuit in Figure E)
. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ= 175°C,
VCE = 400V, VGE = 0/15V, IC= 50A,
Dynamic test circuit in Figure E)
E,SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C 150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
Ets*
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
E,SWITCHING ENERGY LOSSES
300V 350V 400V 450V 500V 550V
0mJ
1mJ
2mJ
3mJ
4mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ,JUNCTION TEMPERATURE VCE,COLLECTOR-EMITTER VOLTAGE
Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC= 50A, RG= 7Ω,
Dynamic test circuit in Figure E)
Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ= 175°C,
VGE = 0/15V, IC= 50A, RG= 7Ω,
Dynamic test circuit in Figure E)