CEP4060A/CEB4060A March 1998 4 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 60V , 15A , RDS(ON)=85m @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S CEB SERIES TO-263(DD-PAK) G D S S CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Parameter Drain Current-Continuous -Pulsed ID 15 A IDM 45 A Drain-Source Diode Forward Current IS 15 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 50 0.35 W W/ C TJ, TSTG -65 to 175 C Thermal Resistance, Junction-to-Case RJC 3 C/W Thermal Resistance, Junction-to-Ambient RJA 62.5 C/W Operating and Storage Temperature Range THERMAL CHARACTERISTICS 4-62 CEP4060A/CEB4060A ELECTRICAL CHARACTERISTICS (TC 25 C unless otherwise noted) Parameter Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V Gate-Body Leakage IGSS VGS = 20V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 7.5A On-State Drain Current ID(ON) gFS VGS = 10V, VDS = 10V Min Typ Max Unit OFF CHARACTERISTICS 60 V 25 A 100 nA 2.8 4 V 66 85 m ON CHARACTERISTICS a Forward Transconductance VDS = 10V, ID = 7.5A 2 A 15 6 S 335 PF 150 PF 40 PF b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =25V, VGS = 0V f =1.0MHZ b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD = 30V, ID =15A, VGS = 10V, VGEN =25 12 20 ns 65 100 ns 20 30 ns Fall Time tf 35 50 ns Total Gate Charge Qg 10 13 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =48V, ID = 15A, VGS =10V 4-63 2.4 nC 4 nC 4 CEP4060A/CEB4060A ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =7.5A VSD 0.8 1.3 Notes a.Pulse Test:Pulse Width 300s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 30 20 -55 C VGS=10,9,8,7,6,5V 20 ID, Drain Current (A) ID, Drain Current(A) 25 VGS=4V 15 10 VGS=3V 25 C 15 125 C 10 5 5 0 0 0 1 2 3 4 5 0 6 2 3 4 5 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.8 RDS(ON), Normalized Drain-Source On-Resistance 600 500 400 Ciss 300 200 Coss 100 0 1 VDS, Drain-to-Source Voltage (V) 700 C, Capacitance (pF) 4 Crss VGS=5V 1.6 Tj=125 C 1.4 1.2 25 C 1.0 -55 C 0.8 0.6 0 10 20 30 40 50 VDS, Drain-to Source Voltage (V) 0 5 10 15 20 25 30 ID, Drain Current (A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4-64 V 1.09 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage CEP4060A/CEB4060A VDS=VGS ID=-250A 1.06 1.03 1.00 0.97 0.94 0.91 0.88 -50 -25 0 25 50 75 100 125 150 1.06 ID=250A 1.04 4 1.02 1.00 0.98 0.96 0.94 -50 -25 20 10 75 100 125 150 VGS=0V 10 8 Is, Source-drain current (A) gFS, Transconductance (S) 50 Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 6 4 2 VDS=10V 1 0.1 0 0 2 4 6 8 0.4 10 0.6 IDS, Drain-Source Current (A) 0.8 1.0 1.2 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current 70 15 VDS=48V ID=15A 12 ID, Drain Current (A) VGS, Gate to Source Voltage (V) 25 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) 9 6 3 0 0 0 2 4 6 8 10 12 14 R (O DS N) Lim it 10 10 1m 10 10 DC 0 s s s ms VGS=10V Single Pulse Tc=25 C 1 0.5 16 1 Qg, Total Gate Charge (nC) 10 60 100 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 4-65 CEP4060A/CEB4060A 4 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 PDM 0.05 t1 t2 0.02 0.01 1. RJC (t)=r (t) * RJC 2. RJC=See Datasheet 3. TJM-TC = P* RJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 0.01 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-66 10000