60
N-Channel Enhancement Mode Field Effect Transistor
March 1998
FEATURES
60V , 15A , R
DS(ON)
=85m @V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous
-Pulsed
ID15 A
IDM 45 A
Drain-Source Diode Forward Current IS15 A
Maximum Power Dissipation PDW
Operating and Storage Temperature Range TJ,TSTG -65 to 175 C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RįJA
3
62.5
/W
C
/W
C
Ω
CEP4060A/CEB4060A
@Tc=25 C
Derate above 25 C 50
0.35 W/ C
S
G
D
CEB SERIES
TO-263(DD-PAK) CEP SERIES
TO-220
GSS
D
D
G
4-62
4
Ć
CEP4060A/CEB4060A
ELECTRICAL CHARACTERISTICS (TC25 C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS =0V,ID=250µA60 V
Zero Gate Voltage Drain Current IDSS VDS =60V, VGS =0V 25 µA
Gate-Body Leakage IGSS VGS = 20V, VDS =0V 100 nA
ON CHARACTERISTICSa
Gate Threshold Voltage VGS(th) VDS =VGS,ID= 250µA2 2.8 4 V
Drain-Source On-State Resistance RDS(ON) VGS =10V, ID=7.5A 66 85 mΩ
On-State Drain Current ID(ON) VGS = 10V, VDS =10V 15 6A
SForward Transconductance FS
gVDS =10V, ID=7.5A
DYNAMIC CHARACTERISTICSb
Input Capacitance CISS
CRSS
COSS
Output Capacitance
Reverse Transfer Capacitance
VDS =25V, VGS =0V
f =1.0MHZ
335 PF
150 PF
PF
40
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD =30V,
ID=15A,
VGS = 10V,
VGEN =25Ω
12 20 ns
ns
ns
ns
65 100
20 30
35 50
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =48V, ID=15A,
VGS =10V
10 13 nC
nC
nC
2.4
4
Fall Time
4-63
4
Ć
Ć
CEP4060A/CEB4060A
Parameter Symbol Condition Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage V
SD VGS = 0V, Is =7.5A 0.8 1.3 V
b
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
VDS, Drain-to Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
ID, Drain Current(A)
C, Capacitance (pF)
ID, Drain Current (A)
ś ś
-55 C
25 C
125 C
20
15
10
5
001234 5
Ciss
Coss
Crss
700
600
500
400
300
200
100
001020304050
25 C
-55 C
1.8
1.6
1.4
1.2
1.0
0.8
0.6 0 5 10 15 20 25 30
VGS=5V
Tj=125 C
Drain-Source On-Resistance
RDS(ON), Normalized
4
4-64
30
25
20
15
10
5
0012345 6
VGS=10,9,8,7,6,5V
VGS=4V
VGS=3V
CEP4060A/CEB4060A
with Temperature Figure 6. Breakdown Voltage Variation
with Temperature
Vth, Normalized
Gate-Source Threshold Voltage
gFS, Transconductance (S)
VGS, Gate to Source Voltage (V)
BVDSS, Normalized
Drain-Source Breakdown Voltage
Is, Source-drain current (A)
Figure 7. Transconductance Variation
with Drain Current
IDS, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
VDS, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VSD, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C) Tj, Junction Temperature ( C)
ID, Drain Current (A)
4-65
4
Figure 5. Gate Threshold Variation
20
10
1
0.10.4 0.6 0.8 1.0 1.2
VGS=0V
1.09
1.06
1.03
1.00
0.97
0.94
0.91
0.88-50 -25 0 25 50 75 100 125 150
VDS=VGS
ID=-250ӴA
-50 -25 0 25 50 75 100 125 150
1.06
1.04
1.02
1.00
0.98
0.96
0.94
ID=250ӴA
10
8
6
4
2
002 4 6 810
VDS=10V
70
10
1
0.5 11060100
VGS=10V
Single Pulse
Tc=25 C
R
DS
(ON)Limit
DC
1ms
10ms
100Ӵs
10Ӵs
15
12
9
6
3
00246810121416
V
DS
=48V
I
D
=15A
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
t
V
V
tt
d(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
PULSE WIDTH
4-66
4
CEP4060A/CEB4060A
INVERTED
Transient Thermal Impedance
2
1
0.1
0.010.01 0.1 1 10 100 1000 10000
PDM
t1t2
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
1. RįJC (t)=r (t) * RįJC
2. RįJC=See Datasheet
3. TJM-TC=P*RįJC (t)
4. Duty Cycle, D=t1/t2
r(t),Normalized Effective
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
VDD
R
D
V
VR
S
V
G
GS
IN
GEN
OUT
L
