BB179B@315**OS2 - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)

plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PDTA114E series

PNP resistor-equipped transistors;

R1 = 10 k, R2 = 10 k

Rev. 10 — 21 December 2011 Product data sheet

Table 1. Product overview

Type number Package NPN

complement Package

configuration

NXP JEITA JEDEC

PDTA114EE SOT416 SC-75 - PDTC114EE ultra small

PDTA114EM SOT883 SC-101 - PDTC114EM leadless ultra small

PDTA114ET SOT23 - TO-236AB PDTC114ET small

PDTA114EU SOT323 SC-70 - PDTC114EU very small

100 mA output current capability Reduces component count

Built-in bias resistors Reduces pick and place costs

Simplifies circuit design AEC-Q101 qualified

Digital application in automotive and

industrial segments

Cost-saving alternative for BC847/857

series in digital applications

Control of IC inputs Switching loads

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 50 V

IOoutput current - - 100 mA

R1 bias resistor 1 (input) 7 10 13 k

R2/R1 bias resistor ratio 0.8 1.0 1.2

Product data sheet Rev. 10 — 21 December 2011 2 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

2. Pinning information

3. Ordering information

4. Marking

[1] * = placeholder for manufacturing site code.

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

SOT23; SOT323; SOT416

1 input (base)

2 GND (emitter)

3 output (collector)

SOT883

1 input (base)

2 GND (emitter)

3 output (collector)

006aaa144

sym003

1R1

Transparent

top view

sym003

1R1

Table 4. Ordering information

Type number Package

Name Description Version

PDTA114EE SC-75 plastic surface-mounted package; 3 leads SOT416

PDT A114EM SC-101 leadless ultra small plastic package; 3 solder lands;

body 1.0 0.6 0.5 mm SOT883

PDTA114ET - plastic surface-mounted package; 3 leads SOT23

PDTA114EU SC-70 plastic surface-mounted package; 3 leads SOT323

Table 5. Marking codes

Type number Marking code[1]

PDTA114EE 03

PDTA114EM E5

PDTA114ET *03

PDTA114EU *03

Product data sheet Rev. 10 — 21 December 2011 3 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base volt ag e open collect or - 10 V

VIinput voltage

positive - +40 V

negative - 10 V

IOoutput current - 100 mA

ICM peak collector current single pulse; tp1ms - 100 mA

Ptot total power dissipation Tamb 25 C

PDTA114EE (SOT416) [1][2] -150mW

PDTA114EM (SOT883) [2][3] -250mW

PDTA114ET (SOT23) [1] -250mW

PDTA114EU (SOT323) [1] -200mW

Tjjunction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 10 — 21 December 2011 4 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

(1) SOT23; FR4 PCB, standard footprint

SOT883; FR4 PCB with 70 m copper strip line, standard footprint

(2) SOT323; FR4 PCB, standard footprint

(3) SOT416; FR4 PCB, standard footprint

Fig 1. Power derating curves

Tamb (°C)

-75 17512525 75-25

006aac778

100

200

300

Ptot

(mW)

(1)

(2)

(3)

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from junction

to ambient in free air

PDTA114EE (SOT416) [1][2] --830K/W

PDTA114EM (SOT883) [2][3] --500K/W

PDTA114ET (SOT23) [1] --500K/W

PDTA114EU (SOT323) [1] --625K/W

Product data sheet Rev. 10 — 21 December 2011 5 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for

PDTA114EE (SOT416); typ ical values

FR4 PCB, 70 m copper strip line

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for

PDTA114EM (SOT883); typ ical values

006aac781

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1

0.05

0.02 0.01

006aac782

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1 0.05

0.02

0.01

Product data sheet Rev. 10 — 21 December 2011 6 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for

PDTA1 14ET (SOT23); typical values

FR4 PCB, standard footprint

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for

PDTA1 14EU (SOT323); typical values

006aac779

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1

0.05

0.02 0.01

006aac780

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1

0.05

0.02 0.01

Product data sheet Rev. 10 — 21 December 2011 7 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

7. Characteristics

[1] Characteristics of built-in transistor.

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base

cut-off current VCB =50 V; IE=0A - - 100 nA

ICEO collector-emitter

cut-off current VCE =30 V; IB=0A - - 1A

VCE =30 V; IB=0A;

Tj= 150 C--5A

IEBO emitter-base

cut-off current VEB =5V; I

C=0A - - 400 A

hFE DC current gain VCE =5V; I

C=5mA 30 - -

VCEsat collector-emitter

saturation voltage IC=10 mA;

IB=0.5 mA --150 mV

VI(off) off-state input

voltage VCE =5V;

IC=100 A-1.1 0.8 V

VI(on) on-state input

voltage VCE =0.3 V;

IC=10 mA 2.5 1.8 - V

R1 bias resisto r 1 (input) 7 10 13 k

R2/R1 bias resistor ratio 0.8 1.0 1.2

Cccollector capacitance VCB =10 V;

IE=i

e=0A; f=1MHz --3pF

fTtransition frequency VCE =5V;

IC=10 mA;

f = 100 MHz

[1] - 180 - MHz

Product data sheet Rev. 10 — 21 December 2011 8 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

VCE =5V

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

IC/IB=20

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

Fig 6. DC current gain as a function of collector

current; typical values Fig 7. Collector-emitter sa tu ration voltage as a

function of collector current; typical values

VCE =0.3 V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

VCE =5V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

Fig 8. On-state input voltage as a function of

collector current; typical valu es Fig 9. Off-state input voltage as a function of

collector current; typical values

IC (mA)

-10-1 -102

-10-1

006aac773

102

103

hFE

(1)

(2)

(3)

IC (mA)

-1 -102

-10

006aac774

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)

006aac775

IC (mA)

-10-1 -102

-10-1

-1

-10

VI(on)

(V)

-10-1

(1)

(2)

(3)

IC (mA)

-10-1 -10-1

006aac776

-1

-10

VI(off)

(V)

-10-1

(1)

(2)

(3)

Product data sheet Rev. 10 — 21 December 2011 9 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

f=1MHz; T

amb =25CV

CE =5V; T

amb =25C

Fig 10. Collector capacitan ce as a function of

collector-base voltage; typical values Fig 11. Transition frequency as a fu nc tio n of collector

current; typical values of built-in transistor

VCB (V)

0 -50-40-20 -30-10

006aac777

(pF)

006aac763

IC (mA)

-10-1 -102

-10-1

102

103

(MHz)

Product data sheet Rev. 10 — 21 December 2011 10 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 12. Package outline PDTA114EE (SOT416/SC-75) Fig 13. Package outlin e PDTA114EM (SOT88 3/SC-101)

Fig 14. Package outline PDTA114 E T (SOT23) Fig 15. Package outline PDTA114EU (SOT323/SC-70)

04-11-04Dimensions in mm

0.95

0.60

1.8

1.4

1.75

1.45 0.9

0.7

0.25

0.10

0.30

0.15

30.45

0.15

03-04-03Dimensions in mm

0.62

0.55

0.47 0.50

0.46

0.65

0.20

0.12

0.30

0.22

0.30

0.22

1.02

0.95

0.35

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1 1.4

1.2

0.48

0.38 0.15

0.09

04-11-04Dimensions in mm

0.45

0.15

1.1

0.8

2.2

1.8

2.2

2.0 1.35

1.15

1.3

0.4

0.3 0.25

0.10

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantit y

3000 10000

PDTA114EE SOT416 4 mm pitch, 8 mm tape and reel -115 -135

PDTA114EM SOT883 2 mm pitch, 8 mm tape and reel - -315

PDTA114ET SOT23 4 mm pitch, 8 mm tape and reel -215 -235

PDTA114EU SOT323 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 10 — 21 December 2011 11 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 16. Reflow soldering footprint PDTA114EE (SOT416/SC-75)

Reflow soldering is the only recommended soldering method.

Fig 17. Reflow soldering footprint PDTA114EM (SOT883/SC-101)

solder lands

solder resist

occupied area

solder paste

sot416_fr

0.85

1.7

2.2

0.5

(3×)

0.6

(3×)

1.3

Dimensions in mm

solder lands

solder resist

occupied area

solder paste

sot883_fr

1.3

0.3

0.6 0.7

0.4

0.9

0.3

(2×)

0.4

(2×)

0.25

(2×)

R0.05 (12×)

0.7

Dimensions in mm

Product data sheet Rev. 10 — 21 December 2011 12 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Fig 18. Reflow soldering footprin t PDTA114ET (SOT23)

Fig 19. Wave soldering footprint PDTA1 14ET (SOT23)

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 10 — 21 December 2011 13 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Fig 20. Reflow soldering footprint PDTA114EU (SOT323/SC-70)

Fig 21. Wave soldering footprint PDTA114EU (SOT323/SC-70)

solder lands

solder resist

occupied area

solder paste

sot323_fr

2.65

2.35 0.6

(3×)

0.5

(3×)

0.55

(3×)

1.325

1.85

1.3

Dimensions in mm

sot323_fw

3.65 2.1

1.425

(3×)

4.6

(2×)

2.575

1.8

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Product data sheet Rev. 10 — 21 December 2011 14 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTA114E_SER v.10 20111221 Product data sheet - PDTA114E_SER v.9

Modifications: •Figure 2 and 5: corrected

PDTA114E_SER v.9 20111122 Product data sheet - PDTA114E_SERIES v.8

PDTA114E_SERIES v.8 20040802 Product specification - PDTA114E_SERIES v.7

PDTA114E_SERIES v.7 20030410 Product specification - -

Product data sheet Rev. 10 — 21 December 2011 15 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre vail.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

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Limited warr a nty and liability — Information in this document is believed to

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representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

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Notwithstanding any damages that customer might incur for any reason

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customer for the products described herein shall be limited in accordance

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changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

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authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environment al

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

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applications and products.

NXP Semiconductors does not accept any liabili ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and pro ducts using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

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construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data fro m the objective specification fo r product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 10 — 21 December 2011 16 of 17

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PDTA114E series

PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 21 December 2011

Documen t identifier: PDTA114E_SER

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

14 Contact information. . . . . . . . . . . . . . . . . . . . . 16

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17