IXTX40P50P - LITTELFUSE - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25C to 150C - 500 V

VDGR TJ= 25C to 150C, RGS = 1M- 500 V

VGSS Continuous 20 V

VGSM Transient 30 V

ID25 TC= 25C - 40 A

IDM TC= 25C, Pulse Width Limited by TJM - 120 A

IATC= 25C - 40 A

EAS TC= 25C 3.5 J

dv/dt IS IDM, VDD  VDSS, TJ  150C 10 V/ns

PDTC= 25C 890 W

TJ-55 ... +150 C

TJM 150 C

Tstg -55 ... +150 C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C

MdMounting Force (PLUS247) 20..120/4.5..27 N/lb

Mounting Torque (TO-264) 1.13/10 Nm/lb.in

Weight PLUS247 6 g

TO-264 10 g

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250A - 500 V

VGS(th) VDS = VGS, ID = -1mA - 2.0 - 4.5 V

IGSS VGS = 20V, VDS = 0V 100 nA

IDSS VDS = VDSS, VGS = 0V - 50A

TJ = 125C - 250A

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 230 m

PolarPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTK40P50P

IXTX40P50P

VDSS = - 500V

ID25 = - 40A

RDS(on) 



 230m





Features

International Standard Packages

Rugged PolarPTM Process

Avalanche Rated

Fast Intrinsic Diode

Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

DS99935D(6/15)

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXTX)

Tab

G

DS

TO-264 (IXTK)

S

G

D

Tab

IXTK40P50P

IXTX40P50P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = 0.5 • ID25, Note 1 23 38 S

Ciss 11.5 nF

Coss VGS = 0V, VDS = - 25V, f = 1MHz 1150 pF

Crss 93 pF

td(on) 37 ns

tr 59 ns

td(off) 90 ns

tf 34 ns

Qg(on) 205 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 nC

Qgd 75 nC

RthJC 0.14C/W

RthCS 0.15 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V - 40 A

ISM Repetitive, Pulse Width Limited by TJM -160 A

VSD IF = - 20A, VGS = 0V, Note 1 - 3.0 V

trr 477 ns

QRM 14.5 C

IRM - 61 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t  300s, duty cycle, d  2%.

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1 (External)

IF = - 20A, -di/dt = -150A/s

VR = -100V, VGS = 0V

Terminals: 1 - Gate

2 - Drain

3 - Source

PLUS247TM Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Terminals: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 AA Outline

IXTK40P50P

IXTX40P50P

Fi g . 1. Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

-40

-35

-30

-25

-20

-15

-10

-5

0-9-8-7-6-5-4-3-2-10

V

DS

- Vo lt s

I

D

- Ampe res

V

GS

= - 10V

- 7V

- 5

V

- 6

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

-90

-80

-70

-60

-50

-40

-30

-20

-10

0-30-25-20-15-10-50

V

DS

- Vo lt s

I

D

- Amperes

V

GS

= - 10V

- 5

V

- 6

V

- 7

V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ T

J

= 125ºC

-40

-35

-30

-25

-20

-15

-10

-5

0-18-16-14-12-10-8-6-4-20

V

DS

- Vo lt s

I

D

- Ampe res

V

GS

= - 10V

- 7V

- 6V

- 5V

Fig. 4. R

DS(on)

Norm alized to I

D

= - 20A Value vs.

Junction T emperature

0.4

0.8

1.2

1.6

2.0

2.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= - 10V

I

D

= - 40A

I

D

= - 20A

Fig. 5. R

DS(on)

Normalized to I

D

= - 20A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-90-80-70-60-50-40-30-20-100

I

D

- A mperes

R

DS(on)

- Normalized

V

GS

= - 10V

T

J

= 25ºC

T

J

= 125ºC

Fig. 6. Maxim um Drain Current vs.

Case Temp er atu r e

-45

-40

-35

-30

-25

-20

-15

-10

-5

0-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Ampe res

IXTK40P50P

IXTX40P50P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fi g. 7. I n pu t Admi ttance

-70

-60

-50

-40

-30

-20

-10

0-6.5-6.0-5.5-5.0-4.5-4.0-3.5

V

GS

- V olts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fi g . 8. T r a n sco n d u ctance

0

10

20

30

40

50

60

70

-70-60-50-40-30-20-100

I

D

- A mperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 9. F o rward Vo l tag e D rop o f I n tr i n si c D iod e

-140

-120

-100

-80

-60

-40

-20

0-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5

V

SD

- V olts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

00 20 40 60 80 100 120 140 160 180 200 220

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= - 250V

I

D

= - 20A

I

G

= -1mA

Fig. 11. Capacitance

10

100

1,000

10,000

100,000

-40-35-30-25-20-15-10-50

V

DS

- V olts

Capacitance - PicoFarads

f = 1 MH

z

Ciss

Crss

Coss

Fi g. 12. F o rward -B ias Safe Operati ng Area

0.1

1

10

100

1000

10 100 1000

V

DS

- Volts

I

D

- Amper es

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC

-

----

-100ms

-

IXTK40P50P

IXTX40P50P

Fi g . 13. Maxi mum Tran si en t Th ermal I mped an ce

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

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