Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Features General Description * UL Certified No. E209204 (UL1557) FNA41060 / FNA41060B2 is a Motion SPM(R) 45 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, thermal monitoring, and fault reporting. The built-in, highspeed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's robust short-circuit-rated IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. * 600 V - 10 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection * Low Thermal Resistance Using Ceramic Substrate * Low-Loss, Short-Circuit Rated IGBTs * Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout * Built-In NTC Thermistor for Temperature Monitoring * Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing * Single-Grounded Power Supply * Optimized for 5 kHz Switching Frequency * Isolation Rating: 2000 Vrms / min. Applications * Motion Control - Home Appliance / Industrial Motor Related Resources * AN-9070 - Motion SPM(R) 45 Series Users Guide * AN-9071 - Motion SPM(R) 45 Series Thermal Performance Information * AN-9072 - Motion SPM(R) 45 Series Mounting Guidance * RD-344 - Reference Design (Three Shunt Solution) * RD-345 - Reference Design (One Shunt Solution) Figure 1. Package Overview Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FNA41060 FNA41060 SPMAA-A26 Rail 12 FNA41060B2 FNA41060B2 SPMAA-C26 Rail 12 (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 1 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series January 2014 FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Integrated Power Functions * 600 V - 10 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection, and System Control Functions * For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out (UVLO) protection * For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out (UVLO) protection * Fault signaling: corresponding to UVLO (low-side supply) and SC faults * Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt trigger input Pin Configuration VB(U)(26) VTH(1) VS(U)(25) R TH(2) VB(V)(24) VS(V)(23) P(3) VB(W)(22) VS(W)(21) U(4) IN(UH)(20) Case Temperature (TC) Detecting Point IN(VH)(19) IN(WH)(18) VCC(H)(17) VCC(L)(16) V(5) W(6) COM(15) IN (UL)(14) IN (VL)(13) N U(7) IN(WL)(12) N V(8) VFO(11) NW(9) CSC(10) Figure 2. Top View (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 2 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Pin Descriptions Pin Number Pin Name 1 VTH 2 RTH 3 P Positive DC-Link Input 4 U Output for U-Phase 5 V Output for V-Phase 6 W Output for W-Phase 7 NU Negative DC-Link Input for U-Phase 8 NV Negative DC-Link Input for V-Phase 9 NW Negative DC-Link Input for W-Phase 10 CSC Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input 11 VFO Fault Output 12 IN(WL) Signal Input for Low-Side W-Phase 13 IN(VL) Signal Input for Low-Side V-Phase 14 IN(UL) Signal Input for Low-Side U-Phase 15 COM Common Supply Ground 16 VCC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving 17 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 18 IN(WH) Signal Input for High-Side W-Phase 19 IN(VH) Signal Input for High-Side V-Phase 20 IN(UH) Signal Input for High-Side U-Phase 21 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving 22 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving 23 VS(V) High-Side Bias Voltage Ground for V-Phase IGBT Driving 24 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving 25 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving 26 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 Pin Description Thermistor Bias Voltage Series Resistor for the Use of Thermistor (Temperature Detection) 3 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Internal Equivalent Circuit and Input/Output Pins VTH (1) Thermister (26) VB(U) (25) VS(U) (24) VB(V) (23) VS(V) RTH (2) P (3) UVB UVS VVB OUT(UH) UVS U(4) VVS (22) VB(W) WVB (21) VS(W) (20) IN(UH) (19) IN(VH) (18) IN(WH) WVS IN(UH) OUT(VH) VVS V (5) IN(VH) IN(WH) (17) VCC(H) (16) VCC(L) (15) COM (14) IN(UL) (13) IN(VL) (12) IN(WL) (11) VFO (10) CSC VCC OUT(WH) COM WVS W(6) VCC OUT(UL) COM NU (7) IN(UL) IN(VL) IN(WL) OUT(VL) NV (8) VFO C(SC) OUT(WL) NW (9) Figure 3. Internal Block Diagram 1st Notes: 1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. 2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions. 3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 4 www.fairchildsemi.com unless otherwise specified.) Inverter Part Symbol VPN VPN(Surge) VCES Parameter Conditions Supply Voltage Applied between P - NU, NV, NW Supply Voltage (Surge) Applied between P - NU, NV, NW Rating Unit 450 V Collector - Emitter Voltage 500 V 600 V IC Each IGBT Collector Current TC = 25C, TJ 150C 10 A ICP Each IGBT Collector Current (Peak) TC = 25C, TJ 150C, Under 1 ms Pulse Width 20 A PC Collector Dissipation TC = 25C per Chip 34 W TJ Operating Junction Temperature (2nd Note 1) -40 ~ 150 C Rating Unit 2nd Notes: 1. The maximum junction temperature rating of the power chips integrated within the Motion SPM(R) 45 product is 150C. Control Part Symbol Parameter Conditions VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V VBS High - Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), -0.3 ~ VCC + 0.3 IN(UL), IN(VL), IN(WL) - COM V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V IFO Fault Output Current Sink Current at VFO pin VSC Current-Sensing Input Voltage Applied between CSC - COM 1 mA -0.3 ~ VCC + 0.3 V Rating Unit Bootstrap Diode Part Symbol VRRM Parameter Conditions 600 V IF Maximum Repetitive Reverse Voltage Forward Current TC = 25C, TJ 150C 0.50 A IFP Forward Current (Peak) TC = 25C, TJ 150C, Under 1 ms Pulse Width 1.50 A TJ Operating Junction Temperature -40 ~ 150 C Rating Unit 400 V -40 ~ 125 C 2000 Vrms Total System Symbol VPN(PROT) Parameter Self-Protection Supply Voltage Limit (Short-Circuit Protection Capability) TSTG Storage Temperature VISO Isolation Voltage Conditions VCC = VBS = 13.5 ~ 16.5 V TJ = 150C, Non-Repetitive, < 2 s 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate Thermal Resistance Symbol Rth(j-c)Q Parameter Junction to Case Thermal Resistance Rth(j-c)F Conditions Min. Typ. Max. Unit Inverter IGBT Part (per 1 / 6 module) - - 3.6 C / W Inverter FWDi Part (per 1 / 6 module) - - 4.8 C / W 2nd Notes: 2. For the measurement point of case temperature (TC), please refer to Figure 2. (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 5 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Absolute Maximum Ratings (TJ = 25C, Inverter Part Symbol VCE(SAT) VF HS tON Parameter Conditions Min. Typ. Max. Unit Collector - Emitter Saturation VCC = VBS = 15 V Voltage VIN = 5 V IC = 10 A, TJ = 25C - 1.7 2.2 V FWDi Forward Voltage VIN = 0 V IF = 10 A, TJ = 25C - 1.8 2.3 V Switching Times VPN = 300 V, VCC = VBS = 15 V, IC = 10 A TJ = 25C VIN = 0 V 5 V, Inductive Load (2nd Note 3) 0.40 0.70 1.20 s - 0.20 0.45 s - 0.75 1.25 s - 0.25 0.50 s tC(ON) tOFF tC(OFF) - 0.15 - s 0.40 0.70 1.20 s - 0.20 0.45 s - 0.75 1.25 s tC(OFF) - 0.25 0.50 s trr - 0.15 - s - - 1 mA trr LS VPN = 300 V, VCC = VBS = 15 V, IC = 10 A TJ = 25C VIN = 0 V 5 V, Inductive Load (2nd Note 3) tON tC(ON) tOFF ICES Collector - Emitter Leakage VCE = VCES Current 2nd Notes: 3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% I C 100% I C t rr V CE IC IC V CE V IN V IN t ON t OFF t C(ON) t C(OFF) 10% I C V IN(ON) 90% I C V IN(OFF) 10% V CE 10% V CE 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 6 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Electrical Characteristics (TJ = 25C, unless otherwise specified.) IGBT Turn-ON, Eon IGBT Turn-OFF, Eoff FRD Turn-OFF, Erec 600 500 SWITCHING LOSS, ESW [uJ] SWITCHING LOSS, ESW [uJ] Inductive Load, VPN=300V, VCC=15V, TJ=150 700 400 300 200 100 IGBT Turn-ON, Eon IGBT Turn-OFF, Eoff FRD Turn-OFF, Erec 600 500 400 300 200 100 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 1 COLLECTOR CURRENT, Ic [AMPERES] 2 3 4 5 6 7 8 9 10 11 COLLECTOR CURRENT, Ic [AMPERES] Figure 5. Switching Loss Characteristics (Typical) Control Part Symbol Parameter IQCCH Quiescent VCC Supply Current IQCCL IPCCH Operating VCC Supply Current IPCCL Conditions Min. Typ. Max. Unit VCC(H) = 15 V, IN(UH,VH,WH) = 0 V VCC(H) - COM - - 0.10 mA VCC(L) = 15 V, IN(UL,VL, WL) = 0 V VCC(L) - COM - - 2.65 mA VCC(L) = 15 V, fPWM = 20 kHz, duty VCC(H) - COM = 50%, Applied to One PWM Signal Input for High-Side - - 0.15 mA VCC(L) = 15 V, fPWM = 20 kHz, duty VCC(L) - COM = 50%, Applied to One PWM Signal Input for Low-Side - - 3.65 mA IQBS Quiescent VBS Supply Current VBS = 15 V, IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) VS(V), VB(W) - VS(W) - - 0.30 mA IPBS Operating VBS Supply Current VCC = VBS = 15 V, fPWM = 20 kHz, VB(U) - VS(U), VB(V) Duty = 50%, Applied to One PWM VS(V), VB(W) - VS(W) Signal Input for High-Side - - 2.00 mA VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 10 k to 5 V Pull-up 4.5 - - V VSC = 1 V, VFO Circuit: 10 k to 5 V Pull-up VFOL VSC(ref) Short-Circuit Current Trip Level UVCCD UVCCR UVBSD Supply Circuit Under-Voltage Protection UVBSR tFOD Fault-Out Pulse Width VIN(ON) ON Threshold Voltage VIN(OFF) RTH - - 0.5 V VCC = 15 V (2nd Note 4) 0.45 0.50 0.55 V Detection level 10.5 - 13.0 V Reset level 11.0 - 13.5 V Detection level 10.0 - 12.5 V Reset level 10.5 - 13.0 V 30 - - s - - 2.6 V 0.8 - - V Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), OFF Threshold Voltage IN(WL) - COM Resistance of Thermister @TTH = 25C, (2nd Note 5) - 47 - k @TTH = 100C - 2.9 - k 2nd Notes: 4. Short-circuit protection is functioning only at the low-sides. 5. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application. (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 7 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Inductive Load, VPN=300V, VCC=15V, TJ=25 700 550 R-T Curve in 50 ~ 125 500 20 450 16 Resistance[k] Resistance[k] FNA41060 / FNA41060B2 Motion SPM(R) 45 Series R-T Curve 600 400 350 300 250 12 8 4 200 0 50 60 70 150 80 90 100 110 120 Temperature [ ] 100 50 0 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 Temperature TTH[ ] Figure. 6. R-T Curve of The Built-In Thermistor Bootstrap Diode Part Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage IF = 0.1 A, TC = 25C - 2.5 - V trr Reverse-Recovery Time IF = 0.1 A, TC = 25C - 80 - ns Built-In Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 o TC=25 C 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Figure 7. Built-In Bootstrap Diode Characteristic 2nd Notes: 6. Built-in bootstrap diode includes around 15 resistance characteristic. (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 8 www.fairchildsemi.com Symbol Parameter Conditions Min. Typ. Max. Unit - 300 400 V VPN Supply Voltage Applied between P - NU, NV, NW VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 13.5 15.0 16.5 V VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) VS(W) 13.0 15.0 18.5 V -1 - 1 V / s dVCC / dt, Control Supply Variation dVBS / dt tdead Blanking Time for Preventing Arm-Short For each input signal 1.5 - - s fPWM PWM Input Signal - 40C TJ 150C - - 20 kHz VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM (Including Surge-Voltage) -4 4 V Minimun Input Pulse Width (2nd Note 7) s PWIN(ON) PWIN(OFF) 0.5 - - 0.5 - - 2nd Notes: 7. This product might not make response if input pulse width is less than the recommanded value. Allowable Maximum Output Current 10 9 fSW=5kHz 8 IOrms [Arms] 7 6 5 4 VDC=300V, VCC=VBS=15V 3 TJ 150 , TC 125 2 fSW=15kHz M.I.=0.9, P.F.=0.8 Sinusoidal PWM 1 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Case Temperature, TC [] Figure 8. Allowable Maximum Output Current 2nd Notes: 8. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition. (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 9 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Recommended Operating Conditions Parameter Device Flatness Mounting Torque Conditions See Figure 9 Min. Typ. Max. Unit 0 - + 120 m Mounting Screw: M3 Recommended 0.7 N * m 0.6 0.7 0.8 N*m See Figure 10 Recommended 7.1 kg * cm 6.2 7.1 8.1 kg * cm - 11.00 - g Weight Figure 9. Flatness Measurement Position Pre - Screwing : 12 2 Final Screwing : 21 1 Figure 10. Mounting Screws Torque Order 2nd Notes: 9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction. 10. Avoid one side tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of the SPM(R) 45 package to be damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating. (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 10 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Mechanical Characteristics and Ratings Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under-voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under-voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 11. Under-Voltage Protection (Low-Side) Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b5 b1 UVBSD b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under-voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under-voltage reset (UVBSR). b6 : Normal operation: IGBT ON and carrying current. Figure 12. Under-Voltage Protection (High-Side) (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 11 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Time Charts of Protective Function c6 Protection Circuit State SET Internal IGBT Gate - Emitter Voltage FNA41060 / FNA41060B2 Motion SPM(R) 45 Series Lower Arms Control Input c7 RESET c4 c3 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of Shunt Resistance Fault Output Signal c5 CR Circuit Time Constant Delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short-circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Input "LOW": IGBT OFF state. c6 : Input "HIGH": IGBT ON state, but during the active period of fault output, the IGBT doesn't turn ON. c7 : IGBT OFF state. Figure 13. Short-Circuit Protection (Low-Side Operation Only) Input/Output Interface Circuit +5 V (for MCU or Control power) SPM R PF = 10 k IN (UH) , IN (VH) , IN(WH) IN (UL) , IN (VL) , IN(WL) MCU VFO COM Figure 14. Recommended MCU I/O Interface Circuit 2nd Notes: 11. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme in the application and the wiring impedance of the application's printed circuit board. The input signal section of the Motion SPM(R) 45 product integrates a 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, pay attention to the signal voltage drop at input terminal. (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 12 www.fairchildsemi.com CBS CBSC RS (25) VS(U) VS(U) (20) IN(UH) (24) VB(V) CBSC (23) VS(V) (19) IN(VH) Gating VH IN(VH) CBSC CBS RS OUT(VH) VS(V) (22) VB(W) V (5) M VB(W) (21) VS(W) VS(W) (18) IN(WH) Gating WH IN(WH) (17) VCC(H) +15 V CPS U (4) VS(U) VB(V) VS(V) RS M C U OUT(UH) IN(UH) Gating UH CBS P (3) VB(U) CPS CPS CSPC15 CSP15 CDCS OUT(WH) VDC VCC VS(W) (15) COM W (6) COM LVIC +5 V (16) VCC(L) VCC OUT(UL) RPF NU (7) CSPC05 CSP05 RS (11) VFO Fault CBPF RSU VFO CPF RS (14) IN(UL) RS (13) IN(VL) RS (12) IN(WL) Gating UL Gating VL Gating WL CSC RF RTH NV (8) RSV IN(VL) IN(WL) COM (10) CSC CPS CPS CPS Input Signal for Short-Circuit Protection OUT(VL) IN(UL) OUT(WL) CSC NW (9) RSW (1) VTH (2) RTH THERMISTOR Temp. Monitoring U-Phase Current V-Phase Current W-Phase Current Figure 15. Typical Application Circuit 3rd Notes: 1) To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm). 2) By virtue of integrating an application-specific type of HVIC inside the Motion SPM(R) 45 product, direct coupling to MCU terminals without any optocoupler or transformer isolation is possible. 3) VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA (please refer to Figure 14). 4) CSP15 of around seven times larger than bootstrap capacitor CBS is recommended. 5) Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns (recommended RS = 100 , CPS = 1 nF). 6) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s. 8) The connection between control GND line and power GND line which includes the NU, NV, NW must be connected to only one point. Please do not connect the control GND to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible. 9) Each capacitor should be mounted as close to the pins of the Motion SPM 45 product as possible. 10) To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 F between the P and GND pins is recommended. 11) Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays. 12) The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals (recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 ). 13) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and frequency characteristics in CBSC. 14) For the detailed information, please refer to the AN-9070, AN-9071, AN-9072, RD-344, and RD-345. (c)2011 Fairchild Semiconductor Corporation FNA41060 / FNA41060B2 Rev. C3 13 www.fairchildsemi.com FNA41060 / FNA41060B2 Motion SPM(R) 45 Series HVIC (26) VB(U) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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