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PNP SILICON EPITAXIAL TRANSISTOR
2SA1836
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D15615EJ2V0DS00 (2nd edition)
Date Published October 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
FEATURES
High DC current gain: hFE2 = 200 TYP.
High voltage: VCEO = 50 V
Can be automatically mounted
ORDERING INFORMATION
PART NUMBER PACKAGE
2SA1836 SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current (DC) IC(DC) 100 mA
Collector Current (pulse) Note1 IC(pulse) 200 mA
Total Power Dissipation Note2 PT 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Notes 1. PW 10 ms, Duty Cycle 50%
2. When mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
PACKAGE DRAWING (Unit: mm)
0.3
1.6 ± 0.1
0.8 ± 0.1
2
0.2+0.1
–0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.15+0.1
–0.05
+0.1
–0
Data Sheet D15615EJ2V0DS
2
2SA1836
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 60 V, IE = 0
100 nA
Emitter Cut-off Current IEBO VEB = 5.0 V, IC = 0
100 nA
DC Current Gain Note hFE1 VCE = 6.0 V, IC = 0.1 mA 50
hFE2 VCE = 6.0 V, IC = 1.0 mA 90 200 600
Base to Emitter Voltage Note VBE VCE = 6.0 V, IC = 1.0 mA 0.62 V
Collector Saturation Voltage Note VCE(sat) IC = 100 mA, IB = 10 mA 0.18 0.30 V
Base Saturation Voltage Note VBE(sat) IC = 100 mA, IB = 10 mA 0.86 1.00 V
Gain Bandwidth Product fT VCE = 6.0 V, IE = 10 mA 50 180 MHz
Output Capacitance Cob VCE = 6.0 V, IE = 0 mA, f = 1.0 MHz 4.5 6.0 pF
Note Pulsed: PW 350
µ
s, Duty Cycle 2%
hFE CLASSFICATION
Marking M4 M5 M6 M7
hFE2 90 to 180 135 to 270 200 to 400 300 to 600
Data Sheet D15615EJ2V0DS 3
2SA1836
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - ˚C
P
T
- Total Power Dissipation - mW
0100 1257525 150
200
300 Free air
250
150
50
50
100
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - V
I
C
- Collector Current - mA
0.4 0.5 0.6 0.7 0.8 0.9 1.0
100
10
30
1
3
0.1
0.3
0.01
0.03
TA = 75˚C
25˚C
–25˚C
V
CE
= 6.0 V
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
00.2 0.4 0.6 0.8 1.
0
100
80
60
40
20
0.4
0.6
0.8
1.0
1.4
1.6
2.0
1.8
1.2
IB = 0.2 mA
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
52110 10020 50
1
0.2
0.5
0.1
0.05
0.02
0.01
IC = 10 IB
.
IC - Collector Current - mA
VBE(sat) - Base Saturation Voltage - V
VCE(sat) - Collector Saturation Voltage - V
VCE(sat)
VBE(sat)
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
2010 30 40
8
6
4
2
0
I
B
= 5.0 µA
40
35
30
25
20
15
10
45
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
52110 10020 50
10
2
5
1
0.5
0.2
0.1
f = 1.0 MHz
V
CB
- Collector to Base Voltage - V
C
ob
- Output Capacitance - pF
Data Sheet D15615EJ2V0DS
4
2SA1836
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
521 10 10020 50
1000
200
500
100
50
20
10
IE - Emitter Current - mA
fT - Gain Bandwidth Product - MHz
VCE = 6 V
1 V
DC CURRENT GAIN vs. COLLECTOR CURRENT
10.30.1 310010 30
1000
500
200
100
50
20
10
I
C
- Collector Current - mA
h
FE
- DC Current Gain
V
CE
= 6 V
1 V
DC CURRENT GAIN vs. COLLECTOR CURRENT
10.30.1 310010 30
1000
500
200
100
50
20
10
I
C
- Collector Current - mA
h
FE
- DC Current Gain
V
CE
= 6.0 V
T
A
= 75
˚C
25
˚C
25
˚C
2SA1836
The information in this document is current as of October 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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or any other liability arising from the use of such products. No license, express, implied or otherwise, is
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Descriptions of circuits, software and other related information in this document are provided for illustrative
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Electronics products, customers must incorporate sufficient safety measures in their design, such as
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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M8E 02. 11-1