AFT09MS015NT1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
Designed for mobile two--way radio applications with frequencies from 136
to 941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
mobile radio equipment.
Narrowband Performance (12.5 Vdc, IDQ = 100 mA, TA=25C, CW)
Frequency
(MHz)
Gps
(dB)
D
(%)
Pout
(W)
870 (1) 17.2 77.0 16
Wideband Performance (12.5 Vdc, TA=25C, CW)
Frequency
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
136--174 0.38 16.0 60.0 15
350--470 0.23 18.5 60.0 16
760--870 (2) 0.32 16.8 52.3 15
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type VSWR
Pin
(W)
Test
Voltage Result
870 (1) CW > 65:1 at all
Phase Angles
0.5
(3 dB Overdrive)
17 No Device
Degradation
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760--870 MHz UHF broadband reference circuit.
Features
Characterized for Operation from 136 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
High Linearity for: TETRA, SSB
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel.
Typical Applications
Output or Driver Stage VHF Band Mobile Radio
Output or Driver Stage UHF Band Mobile Radio
Output or Driver Stage for 700--800 MHz Mobile Radio
Document Number: AFT09MS015N
Rev. 1, 7/2014
Freescale Semiconductor
Technical Data
136–941 MHz, 16 W, 12.5 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
AFT09MS015NT1
PLD--1.5W
Figure 1. Pin Connections
Note: The center pad on the backside of
the package is the source terminal
for the transistor.
Drain
Gate
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +40 Vdc
Gate--Source Voltage VGS --6.0, +12 Vdc
Operating Voltage VDD 17, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +150 C
Operating Junction Temperature (1,2) TJ--40 to +150 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD125
1.0
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 85C, 15 W CW, 12.5 Vdc, IDQ = 100 mA, 870 MHz
RJC 1.0 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) A, passes 150 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =40Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 12.5 Vdc, VGS =0Vdc)
IDSS — — 2 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 600 nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=78Adc)
VGS(th) 1.8 2.2 2.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=0.78Adc)
VDS(on) —0.15 —Vdc
Forward Transconductance
(VDS =10Vdc,I
D=5.9Adc)
gfs —4.4 — S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 12.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —1.04 —pF
Output Capacitance
(VDS = 12.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —34 —pF
Input Capacitance
(VDS = 12.5 Vdc, VGS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —74 —pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955. (continued)
AFT09MS015NT1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ = 100 mA, Pin =0.3W,f=870MHz
Common--Source Amplifier Output Power Pout —16.0 — W
Drain Efficiency D—77.0 — %
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
870 CW > 65:1 at all Phase Angles 0.5
(3 dB Overdrive)
17 No Device Degradation
4
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
TYPICAL CHARACTERISTICS
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
20
0.1
100
084
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
12
1
16
10
Measured with 30 mV(rms)ac @ 1 MHz, VGS =0Vdc
Crss
Ciss
Coss
2 6 10 14 18
160
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 3. MTTF versus Junction Temperature — CW
107
106
110 120 130 140
MTTF (HOURS)
150
105
108
VDD = 12.5 Vdc
2.02 Amps
ID=1.47Amps
1.68 Amps
100
AFT09MS015NT1
5
RF Device Data
Freescale Semiconductor, Inc.
870 MHz NARROWBAND PRODUCTION TEST FIXTURE
Figure 4. AFT09MS015NT1 Narrowband Test Circuit Component Layout — 870 MHz
AFT09MS015N
Rev. 1
C1
C2
C3 B1
C4
C6C6
C5
L1 C8
C9 C15 C17
C10 C16 L2
C18
C19
L3
C20
C21
C11
C12
C13
C14
D53709
C7
Table 6. AFT09MS015NT1 Narrowband Test Circuit Component Designations and Values — 870 MHz
Part Description Part Number Manufacturer
B1 RF Bead, Short 2743019447 Fair-Rite
C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C2, C13 0.1 F Chip Capacitors CDR33BX104AKWS AVX
C3, C12 0.01 F Chip Capacitors C0805C103K5RAC Kemet
C4, C11 56 pF Chip Capacitors ATC100B560CT500XT ATC
C5, C8, C9 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC
C6, C7 3.3 pF Chip Capacitors ATC100B3R3CT500XT ATC
C14 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16-RH Multicomp
C15, C10 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C16, C17 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C18, C19 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC
C20 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC
C21 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC
L1 5.0 nH, 2 Turn Inductor A02TKLC Coilcraft
L2 8.0 nH, 3 Turn Inductor A03TKLC Coilcraft
L3 2.5 nH, 1 Turn Inductor A01TKLC Coilcraft
PCB Rogers RO4350B, 0.030,r=3.66 D53709 MTL
6
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
Figure 5. AFT09MS015NT1 Narrowband Test Circuit Schematic — 870 MHz
RF
INPUT
RF
OUTPUT
L1
Z4Z3
C5
Z1 Z2 Z5 Z7
Z10Z9
L2
VDS
VGS
Z12Z11 Z13
C21
Z14
C2 C3
C6
C11 C12 C13
C1
+
C7
C14
+
Z6
C8
C9
Z8
C10
C15
C16
C17
C18
C19
Z15 L3 Z16
C20
Z17 Z18
C4
B1
DUT
Z1 0.3280.080Microstrip
Z2 0.4900.120Microstrip
Z3 0.6100.320Microstrip
Z4 0.1070.3200.466Taper
Z5 0.0820.4660.620Taper
Z6 0.0700.620Microstrip
Z7 0.3000.620Microstrip
Z8 0.3700.620Microstrip
Z9 0.3750.620Microstrip
Z10 0.1200.620Microstrip
Z11 0.1980.320Microstrip
Z12 0.0440.320Microstrip
Z13 0.1590.6200.320Taper
Z14 0.3200.320Microstrip
Z15 0.1130.320Microstrip
Z16 0.5990.120Microstrip
Z17 0.0710.120Microstrip
Z18 0.2380.080Microstrip
Table 7. AFT09MS015NT1 Narrowband Test Circuit Microstrips — 870 MHz
DescriptionMicrostripDescriptionMicrostrip
AFT09MS015NT1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 870 MHz
0
0
12
12344.5
10
4
8
6
14
Pout, OUTPUT POWER (WATTS)
Pin =0.30W
VDD = 12.5 Vdc, f = 870 MHz
16
18
22
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Gate--Source Voltage
at a Constant Input Power
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
0
10
6
0.01
40
60
50
10
30
16
14
12
18
70
80
110
0.1
D, DRAIN EFFICIENCY (%)
1
20
22
0
Figure 7. Power Gain, Output Power and Drain
Efficiency versus Input Power
20
20
Pout, OUTPUT POWER (WATTS)
8
2
0.5 3.52.51.5
Pin =0.15W
4
2
90
100
Gps
Pout
VDD = 12.5 Vdc, IDQ = 100 mA
f = 870 MHz
D
VDD = 12.5 Vdc, IDQ = 100 mA, Pout =15W
f
MHz
Zsource
Zload
870 0.80 + j0.80 2.05 + j1.80
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 8. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
8
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
760--870 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 8. 760--870 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 12.5 Volts, IDQ = 100 mA, TA=25C, CW
Frequency
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
760 0.29 17.1 51.1 15.0
815 0.24 18.0 57.7 15.0
870 0.30 17.0 59.2 15.0
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
815 CW > 65:1 at all
Phase Angles
0.64
(3 dB Overdrive)
15 No Device
Degradation
AFT09MS015NT1
9
RF Device Data
Freescale Semiconductor, Inc.
760--870 MHz UHF BROADBAND REFERENCE CIRCUIT
Figure 9. AFT09MS015NT1 UHF Broadband Reference Circuit Component Layout — 760--870 MHz
D55295
C1
C3
C6
C5
C4 R1
B1 C9
J1
C10
B2
L1
C11
C12
C13
C16
C15
C14
Q1
C2
C8
C7
Table 10. AFT09MS015NT1 UHF Broadband Reference Circuit Component Designations and Values — 760--870 MHz
Part Description Part Number Manufacturer
B1, B2 RF Beads 2743019447 Fair-Rite
C1, C5, C6, C7, C8 20 pF Chip Capacitors GQM2195C2E200GB12D Murata
C2 8.2 pF Chip Capacitor GQM2195C2E8R2BB12D Murata
C3 10 pF Chip Capacitor GQM2195C2E100FB12D Murata
C4, C13 56 pF Chip Capacitors GQM2195C2E560GB12D Murata
C9 1F Chip Capacitor GRM31MR71H105KA88L Murata
C10 10 F Chip Capacitor GRM31CR61H106KA12L Murata
C11, C12 12 pF Chip Capacitors GQM2195C2E120FB12D Murata
C14, C15 5.6 pF Chip Capacitors GQM2195C2E5R6BB12D Murata
C16 100 pF Chip Capacitor GQM2195C2E101GB12D Murata
J1 Right-Angle Breakaway Headers (3 pins) 22-28-8360 Molex
L1 22 nH Air Core Inductor 0908SQ-22NJL Coilcraft
Q1 RF Power LDMOS Transistor AFT09MS015NT1 Freescale
R1 200 , 1/8 W Chip Resistor CRCW0805200RJNEA Vishay
PCB 0.020,r=4.8,FR4 D55295 MTL
10
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
Figure 10. AFT09MS015NT1 UHF Broadband Reference Circuit Schematic — 760--870 MHz
RF
INPUT
RF
OUTPUT
R1
Z3
C1
Z1 Z2 Z5 Z6
Z10
Z9
L1
VDD
VGS
Z11 Z14
C4 C13
C9
C2
C5
C6
Z7
C11
C12
Z15 Z16
C14
Z17 Z18
B1
DUT
C3
Z4
C7
C8
Z8
Z12
C15 C16
Z19
Z13
C10
B2
Z1 0.1500.050Microstrip
Z2 0.1000.034Microstrip
Z3 0.4850.034Microstrip
Z4 0.0650.034Microstrip
Z5 0.0400.250Microstrip
Z6 0.2220.250Microstrip
Z7 0.1300.250Microstrip
Z8 0.0270.250Microstrip
Z9 0.0660.034Microstrip
Z10 0.3860.034Microstrip
Z11 0.0270.180Microstrip
Z12 0.1600.034Microstrip
Z13 0.3500.034Microstrip
Z14 0.2100.180Microstrip
Z15 0.2150.180Microstrip
Z16 0.0650.034Microstrip
Z17 0.4500.034Microstrip
Z18 0.1000.034Microstrip
Z19 0.1500.050Microstrip
Table 11. AFT09MS015NT1 Narrowband Test Circuit Microstrips — 760--870 MHz
DescriptionMicrostripDescriptionMicrostrip
AFT09MS015NT1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 760--870 MHz UHF BROADBAND
REFERENCE CIRCUIT
740
Gps
f, FREQUENCY (MHz)
Figure 11. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power
12
21
14
64
61
58
55
18
17
16
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
19
17
13
780 800 840 860 880
52
Pout,OUTPUT
POWER (WATTS)
VDD = 12.5 Vdc
Pin = 0.32 W (Avg.)
IDQ = 100 mA
18
16
15
14
760 820
20
15
Pout
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 12. Output Power versus Gate--Source Voltage
20
1234
10
5
Pout, OUTPUT POWER (WATTS)
f = 815 MHz
VDD = 12.5 Vdc
Pin =0.32W
0
0
Detail A
1.5
0.511.5 2
1.25
1
1.75
f = 815 MHz
Detail A
VDD = 12.5 Vdc
Pin =0.16W
Pout, OUTPUT POWER (WATTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
15
VDD = 12.5 Vdc
Pin =0.16W
0.75
0.5
VDD = 12.5 Vdc
Pin =0.32W
0.25 0.75 1.25
0.25
1.75
Figure 13. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
13
18
17
0.01 2
Gps
14
25
21
0
7
21
20
19
22
45
65
85
0.1
Pout
VDD = 12.5 Vdc
IDQ = 100 mA
16
870 MHz
D
D, DRAIN
EFFICIENCY (%)
Pout,OUTPUT
POWER (WATTS)
15
14
1
28
5
f = 815 MHz
760 MHz
870 MHz
815 MHz
760 MHz
815 MHz 870 MHz
760 MHz
12
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
760--870 MHz UHF BROADBAND REFERENCE CIRCUIT
f = 760 MHz
f = 870 MHz
f = 870 MHz
f = 760 MHz
Zsource
Zload
Zo=5
VDD = 12.5 Vdc, IDQ = 100 mA, Pout =15W
f
MHz
Zsource
Zload
760 1.35 + j0.86 2.53 - j0.83
770 1.23 + j0.79 2.44 - j0.68
780 1.04 + j0.78 2.29 - j0.39
790 0.90 + j0.80 2.25 - j0.16
800 0.84 + j0.84 2.30 - j0.02
810 0.85 + j0.92 2.49 + j0.02
820 0.92 + j0.99 2.79 - j0.06
830 0.96 + j1.02 2.99 - j0.19
840 0.88 + j1.03 3.01 - j0.21
850 0.71 + j1.04 2.85 - j0.05
860 0.54 + j1.05 2.68 + j0.14
870 0.43 + j1.10 2.62 + j0.25
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 14. UHF Broadband Series Equivalent Source and Load Impedance — 760--870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
AFT09MS015NT1
13
RF Device Data
Freescale Semiconductor, Inc.
Figure 15. PCB Pad Layout for PLD--1.5W
(7.11)
0.28
(4.91)
0.165
(3.94)
0.155
(2.26)
0.089
(2.16)
0.085
Solder pad with
thermal via structure.
(mm)
Inches
Figure 16. Product Marking
A9M15
N( )B
YYWW
14
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
PACKAGE DIMENSIONS
AFT09MS015NT1
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
AFT09MS015NT1
17
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Feb. 2014 Initial Release of Data Sheet
1July 2014 Fig. 6, Output Power versus Gate--Source Voltage at a Constant Input Power: updated Pin values to reflect
correct unit of measure, p. 7
Fig. 8, Narrowband Series Equivalent Source and Load Impedance -- 870 MHz: updated Zsource and Zload
values to match final data from product model, p. 7
18
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
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Document Number: AFT09MS015N
Rev. 1, 7/2014