MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES Features Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* TO-92 2-Lead CASE 182 STYLE 1 SOT-23 (TO-236) CASE 318 STYLE 8 TO-92 SOT-23 2 CATHODE 1 ANODE 3 CATHODE 1 ANODE MARKING DIAGRAMS MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 V Total Device Dissipation @ TA = 25C MBD301G MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G PF Operating Junction Temperature Range Storage Temperature Range TO-92 mW/C 2.8 2.0 TJ -55 to +125 C Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 4T M G G 1 MW 280 200 Derate above 25C MBD301G MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G MBD 301 AYWW G G SOT-23 A = Assembly Location Y = Year WW = Work Week 4T = Device Code (SOT-23) M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2009 November, 2011 - Rev. 6 1 Publication Order Number: MBD301/D MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT Reverse Leakage (VR = 25 V) Figure 3 IR Forward Voltage (IF = 1.0 mAdc) Figure 4 VF Forward Voltage (IF = 10 mAdc) Figure 4 VF Min Typ Max 30 - - - 0.9 1.5 - 13 200 - 0.38 0.45 - 0.52 0.6 Unit V pF nAdc Vdc Vdc ORDERING INFORMATION Package Shipping MBD301G TO-92 (Pb-Free) 5,000 Units / Bulk MMBD301LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBD301LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SMMBD301LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G TYPICAL ELECTRICAL CHARACTERISTICS 2.8 500 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 400 KRAKAUER METHOD 300 200 100 0 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 TA = 100C 1.0 75C 0.1 25C 0.01 0.001 10 10 TA = -40C TA = 85C 1.0 TA = 25C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 Figure 3. Reverse Leakage IF(PEAK) 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 3 SAMPLING OSCILLOSCOPE (50 W INPUT) 1.2 MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G PACKAGE DIMENSIONS TO-92 (TO-226AC) CASE 182-06 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE D EE L P J K D SECTION X-X X X G H V 1 2 C DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --- STYLE 1: PIN 1. ANODE 2. CATHODE N N http://onsemi.com 4 MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 --- MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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