TVS Diode Arrays (SPA(R) Diodes) General Purpose ESD Protection - SP1044 Series SP1044 Series 30pF 30kV Unidirectional Discrete TVS RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 3A of 8/20s surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages Pinout Features 0201 Flipchip 1 2 Note: Drawing not to scale Functional Block Diagram Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. (c)2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/07/16 * ESD, IEC 61000-4-2, 30kV contact, 30kV air * Low capacitance of 30pF (@ VR=0V) * EFT, IEC 61000-4-4, 40A (5/50ns) * Low leakage current of 0.1A at 5V * Lightning, IEC 610004-5,2nd edition, 3A (tP=8/20s) * Industries smallest ESD footprint available (01005) * Halogen free, Lead free and RoHS compliant Applications * Mobile Phones * Wearable Technology * Smart Phones * Camcorders * Portable Navigation Devices * Portable Medical * Tablets * Digital Cameras * Point of Sale Terminals TVS Diode Arrays (SPA(R) Diodes) General Purpose ESD Protection - SP1044 Series Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20s) TOP Operating Temperature -40 to 125 C TSTOR Storage Temperature -55 to 150 C 3.0 A 1 Notes: 1. CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Storage Temperature Range Rating Units -55 to 150 C Maximum Junction Temperature 150 C Maximum Lead Temperature (Soldering 20-40s) 260 C Electrical Characteristics (TOP=25C) Parameter Symbol Reverse Standoff Voltage VRWM Leakage Current ILEAK Clamp Voltage1 Test Conditions Typ Max Units 6.0 V VR=5V with 1 pin at GND 0.1 0.5 A IPP=1A, tp=8/20s, Fwd 8.3 V IPP=2A, tp=8/20s, Fwd 9.3 V TLP, tP=100ns, I/O to GND 0.18 VC Dynamic Resistance RDYN 2 ESD Withstand Voltage1 Diode Capacitance VESD IEC 61000-4-2 (Contact Discharge) 30 kV IEC 61000-4-2 (Air Discharge) 30 kV CD 1 Min Reverse Bias=0V 30 35 pF Note: 1 Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20S Pulse Waveform Capacitance vs. Reverse Bias 50.0 100% 45.0 90% 40.0 Capacitance (pF) 110% Percent of IPP 80% 70% 60% 50% 40% 30.0 25.0 20.0 15.0 30% 10.0 20% 5.0 10% 0% 35.0 0.0 0.0 5.0 10.0 15.0 Time (s) (c)2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/07/16 20.0 25.0 30.0 0 1 2 3 Bias Voltage (V) 4 5 TVS Diode Arrays (SPA(R) Diodes) General Purpose ESD Protection - SP1044 Series Negative Transmission Line Pulsing(TLP) Plot 40 0 35 -5 30 -10 TLP Current (A) TLP Current (A) Postive Transmission Line Pulsing(TLP) Plot 25 20 15 -20 -25 -30 10 -35 5 0 -15 -40 0 3 6 9 12 15 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 TLP Voltage (V) TLP Voltage (V) Clamping Voltage vs IPP 12 Clamp Voltage (VC) 10 8 6 4 2 0 1 1.5 2 2.5 3 Peak Pulse Current-IPP (A) Soldering Parameters Pre Heat Pb - Free assembly - Temperature Min (Ts(min)) 150C - Temperature Max (Ts(max)) 200C - Time (min to max) (ts) 60 - 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3C/second max TS(max) to TL - Ramp-up Rate 3C/second max Reflow - Temperature (TL) (Liquidus) 217C - Temperature (tL) 60 - 150 seconds Peak Temperature (TP) 260+0/-5 C Time within 5C of actual peak Temperature (tp) 20 - 40 seconds Ramp-down Rate 6C/second max Time 25C to peak Temperature (TP) 8 minutes Max. Do not exceed 260C (c)2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/07/16 tP TP Temperature Reflow Condition Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 tS time to peak temperature Time TVS Diode Arrays (SPA(R) Diodes) General Purpose ESD Protection - SP1044 Series Part Marking System Part Numbering System SP 1044 - 01 W T G TVS Diode Arrays (SPA(R) Diodes) G= Green T= Tape & Reel Series Number of Channels Ordering Information Part Number Package Min. Order Qty. SP1044-01WTG 01005 Flipchip 15000 Package W: 01005 Flipchip Package Dimensions -- 01005 Flipchip Pin 1 01005 Flipchip e D Symbol P F Bottom View Max Min Typ Max A 0.168 0.181 0.194 0.007 0.007 0.008 A1 0.008 0.011 0.014 0.000 0.000 0.001 A2 0.160 0.170 0.180 0.006 0.007 0.007 0.280 BSC A1 A A2 e Side View 0.15mm 0.15mm 0.23mm 0.23mm 0.15mm 0.30mm Recommended soldering pad layout 0.30mm Stencil apertures Embossed Carrier Tape & Reel Specification -- 01005 Flipchip (c)2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/07/16 Inches Typ G E Top View Millimeters Min 0.011 BSC D 0.200 0.230 0.260 0.008 0.009 0.010 E 0.400 0.430 0.460 0.016 0.017 0.018 F 0.110 0.130 0.150 0.004 0.005 0.006 G 0.180 0.200 0.220 0.007 0.008 0.009 P 0.130 0.150 0.170 0.005 0.006 0.007