©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 12/07/16
General Purpose ESD Protection - SP1044 Series
Notes:
1. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
IPP Peak Current (tp=8/20μs) 3.0 1A
TOP Operating Temperature -40 to 125 °C
TSTOR Storage Temperature -55 to 150 °C
Electrical Characteristics (TOP=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM 6.0 V
Leakage Current ILEAK VR=5V with 1 pin at GND 0.1 0.5 μA
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Fwd 8.3 V
IPP=2A, tp=8/20µs, Fwd 9.3 V
Dynamic Resistance2RDYN TLP, tP=100ns, I/O to GND 0.18 Ω
ESD Withstand Voltage1VESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance1CDReverse Bias=0V 30 35 pF
Note:
1 Parameter is guaranteed by design and/or device characterization.
2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
Thermal Information
Parameter Rating Units
Storage Temperature Range -55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
8/20μS Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
Capacitance vs. Reverse Bias
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
012345
Capacitance (pF)
Bias Voltage (V)