Data Sheet
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Schottky barrier diode
RB520S-30
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low current rectification
Features
1) Ultra Small mold type. (EMD2)
2) Low IR.
3) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRV
Io mA
IFSM A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 0.6 V IF=200mA
IR--1 μAVR=10V
Parameter Limits
Reverse voltage (DC) 30
Average rectified forward current 200
Forward current surge peak (60Hz・1cyc) 1
Conditions
Junction temperature 125
Storage temperature -40 to +125
Forward voltage
Reverse current
Parameter
EMD2
0.8
1.7
0.6
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
dot (year week factory)
0.95±0.06
0
4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.05
3.5±0.05 1.75±0.1
8.0±0.15
0.2±0.05
0.76±0.05
1.26±0.05
0
φ0.5
0.6
2.0±0.05
1.3±0.06
0
2.45±0.1
空ポケット
0.2
φ1.55±0.05
2.40±0.05
0.90±0.05 0.75±0.05
1.25 0.06
0
1.25 0. 06
0
Empty pocket
1/3 2011.03 - Rev.D