Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky barrier diode
RB520S-30
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low current rectification
Features
1) Ultra Small mold type. (EMD2)
2) Low IR.
3) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRV
Io mA
IFSM A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 0.6 V IF=200mA
IR--1 μAVR=10V
Parameter Limits
Reverse voltage (DC) 30
Average rectified forward current 200
Forward current surge peak (60Hz・1cyc) 1
Conditions
Junction temperature 125
Storage temperature -40 to +125
Forward voltage
Reverse current
Parameter
EMD2
0.8
1.7
0.6
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
dot (year week factory)
0.95±0.06
0
4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.05
3.5±0.05 1.75±0.1
8.0±0.15
0.2±0.05
0.76±0.05
1.26±0.05
0
φ0.5
0.6
2.0±0.05
1.3±0.06
0
2.45±0.1
空ポケット
0.2
φ1.55±0.05
2.40±0.05
0.90±0.05 0.75±0.05
1.25 0.06
0
1.25 0. 06
0
Empty pocket
1/3 2011.03 - Rev.D
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Data Sheet
RB520S-30
10
100
1000
10000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
0
100
200
300
400
500
600
700
800
900
1000
1
10
100
0 102030
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
0
0.1
0.2
0.3
0 0.10.20.30.40.5
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
0
5
10
15
20
25
30
35
40
45
50
AVE:28.2pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
0
5
10
15
20
25
30
AVE:5.60A
8.3ms
Ifsm
1cyc
0
5
10
110100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
110100
t
Ifsm
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
1
10
100
1000
10000
100000
1000000
0 102030
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
f=1MHｚ
0
0.002
0.004
0.006
0.008
0.01
0 5 10 15 20 25 30
DC
D=1/2
Sin(θ＝180)
480
490
500
510
520
530
AVE:507.6mV
Ta=25℃
IF=200mA
n=30pcs
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=25℃
VR=10V
n=30pcs
AVE:114nA
DC
D=1/2
Sin(θ＝180)
1ms
IM=10mA IF=100mA
300us
time
Mounted on epoxy board
2/3 2011.03 - Rev.D
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB520S-30
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating curve (Io-Tc)
0
0.1
0.2
0.3
0.4
0.5
0255075100125
Sin(θ＝180)
DC
D=1/2
T Tj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
AMBIENT TEMPERATURE:Ta(℃)
Derating curve (Io-Ta)
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
0
0.1
0.2
0.3
0.4
0.5
0 25 50 75 100 125
Sin(θ＝180)
DC
D=1/2
TTj=125℃
D=t/T
tVR
Io
VR=15V
0
A
0V
3/3 2011.03 - Rev.D
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes