IRL3705NPbF HEXFET(R) Power MOSFET Logic - Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D G S Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. Base part number Package Type IRL3705NPbF TO-220 Absolute Maximum Ratings Symbol VDSS 55V RDS(on) max. 0.01 ID 89A S D G TO-220AB IRL3705NPbF G Gate D Drain Standard Pack Form Quantity Tube Orderable Part Number 50 IRL3705NPbF Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V 89 ID @ TC = 100C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 63 310 170 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA 1 S Source Units A 1.1 16 340 46 17 5.0 -55 to + 175 W W/C V mJ A mJ V/ns C 300 10 lbf*in (1.1N*m) Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient --- 0.50 --- 0.90 --- 62 C/W 2018-05-25 IRL3705NPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. Typ. Max. Units Conditions 55 --- --- V VGS = 0V, ID = 250A --- 0.056 --- V/C Reference to 25C, ID = 1mA --- --- 0.010 VGS = 10V, ID = 46A --- --- 0.012 VGS = 5.0V, ID = 46A --- --- 0.018 VGS = 4.0V, ID = 39A 1.0 --- 2.0 V VDS = VGS, ID = 250A 50 --- --- S VDS = 25V, ID = 46A --- --- 25 VDS = 55V, VGS = 0V A --- --- 250 VDS = 44V,VGS = 0V,TJ =150C --- --- 100 VGS = 16V nA --- --- -100 VGS = -16V --- --- 98 ID = 46A nC VDS = 44V --- --- 19 VGS = 5.0V , See Fig. 6 and 13 --- --- 49 --- 12 --- VDD = 28V --- 140 --- ID = 46A ns --- 37 --- RG= 1.8VGS = 5.0V --- 78 --- RD= 0.59See Fig. 10 LD Internal Drain Inductance --- V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source OnResistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS 4.5 --- nH Internal Source Inductance LS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Source-Drain Ratings and Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr ton Reverse Recovery Charge Forward Turn-On Time Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 --- 7.5 --- --- --- --- 3600 870 320 --- --- --- Min. Typ. Max. Units --- --- 89 --- --- 310 --- --- 1.3 V Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C,IS = 46A,VGS = 0V --- 94 140 ns TJ = 25C ,IF = 46A pF A --- 290 440 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS +LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) VDD = 25V, starting TJ = 25C, L = 320H, RG = 25, IAS = 46A.(See fig.12) ISD 46A, di/dt 250A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature; for recommended current- handling of the package refer to Design TIP # 93-4 . 2 2018-05-25 IRL3705NPbF 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) 100 10 2.5V 20s PULSE WIDTH T J = 25C 1 0.1 1 10 100 100 TJ = 175C 10 V DS= 25V 20s PULSE WIDTH 5.0 6.0 7.0 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C 4.0 10 A 100 Fig. 2 Typical Output Characteristics 3.0 3.0 1 VDS , Drain-to-Source Voltage (V) 1000 1 20s PULSE WIDTH T J = 175C 1 0.1 A Fig. 1 Typical Output Characteristics 100 2.5V 10 VDS , Drain-to-Source Voltage (V) 2.0 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP TOP 8.0 A I D = 77A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance vs. Temperature 2018-05-25 IRL3705NPbF 6000 V GS , Gate-to-Source Voltage (V) 5000 C, Capacitance (pF) 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = Cds + C gd 4000 Coss 3000 2000 Crss 1000 0 1 10 100 I D = 46A V DS = 44V V DS = 28V 12 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 60 80 100 120 140 A Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 40 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 100 TJ = 175C TJ = 25C 10s 100 100s 1ms 10 10ms VGS = 0V 10 0.4 0.8 1.2 1.6 2.0 2.4 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 20 A 2.8 TC = 25C TJ = 175C Single Pulse 1 1 A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2018-05-25 IRL3705NPbF 100 LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 Fig 10a. Switching Time Test Circuit 20 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2018-05-25 IRL3705NPbF 15V DRIVER L VDS D.U.T RG + V - DD IAS 10V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 800 TOP BOTTOM ID 19A 33A 46A 600 400 200 0 VDD = 25V 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 A 175 Fig 13b. Gate Charge Test Circuit 2018-05-25 IRL3705NPbF Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 7 2018-05-25 IRL3705NPbF TO-220 Package Outline (Dimensions are shown in millimeters (inches) TO-220 Part Marking Information TO-220AB packages are not recommended for Surface Mount Application. 8 2018-05-25 IRL3705NPbF Qualification Information Industrial (per JEDEC JESD47F) Qualification Level N/A TO-220 Moisture Sensitivity Level Yes RoHS Compliant Applicable version of JEDEC standard at the time of product release. Revision History Date 05/25/2018 Comments Changed datasheet with Infineon logo - all pages. Corrected TO-220 Package outline on page 8. Added disclaimer on last page. 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