PD - 95939 IRF7233PbF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 9.5 6.0 76 2.5 1.6 0.02 60 12 -55 to + 150 V W/C mJ V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 11/9/04 IRF7233PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS V(BR)DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -14 -12 --- --- -0.6 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -5.0mA --- --- V VGS = 0V, ID = -250A 0.001 --- V/C Reference to 25C, ID = -1mA 0.013 0.020 VGS = -4.5V, ID = -9.5A 0.023 0.033 VGS = -2.5V, ID = -6.0A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -9.5A --- -10 VDS = -12V, VGS = 0V --- -1.0 VDS = -9.6V, VGS = 0V A --- -100 VDS = -12V, VGS = 0V, TJ = 70C --- -100 nA VGS = -12V --- 100 VGS = 12V 49 74 ID = -9.5A 9.3 14 nC VDS = -10V 22 32 VGS = -5.0V 26 --- VDD = -10V 540 --- ID = -9.5A ns 77 --- RD = 1.0 370 --- RG = 6.2 4530 6000 VGS = 0V 2400 --- pF VDS = -10V 2220 --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -2.5 -76 --- --- --- --- 43 35 -1.2 65 52 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. 2 When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 1.3mH RG = 25, IAS = 9.5A. www.irf.com IRF7233PbF 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V 80 TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 60 40 20 -1.5V 0 0 2 4 20s PULSE WIDTH TJ = 25C 6 A 8 80 60 40 20 0 10 0 -VDS , Drain-to-Source Voltage (V) TJ = 25C TJ = 150C 10 VDS = -10V 20s PULSE WIDTH 1.5 2.0 2.5 Fig 3. Typical Transfer Characteristics www.irf.com A 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 2.0 -VGS , Gate-to-Source Voltage (V) 4 6 8 10 A Fig 2. Typical Output Characteristics 100 1.0 2 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20s PULSE WIDTH -1.5V TJ = 150C ID = -9.5A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7233PbF 10 V GS = 0V, f = 1kHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + C gd 5000 -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 6000 Ciss 4000 3000 Coss Crss 2000 0 2 4 6 8 10 12 6 4 2 0 20 30 40 50 60 70 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 10 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) TJ = 150C 100 TJ = 25C 10 VGS = 0V 1 0.0 1.0 2.0 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS =-10V 8 0 A ID = -9.5A A 3.0 100us 1ms 10 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7233PbF EAS , Single Pulse Avalanche Energy (mJ) 10.0 -ID , Drain Current (A) 8.0 6.0 4.0 2.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 140 ID -4.2A -7.6A BOTTOM -9.5A TOP 120 100 80 60 40 20 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7233PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 5 H E 1 2 3 0.25 [.010] 4 A e e1 MIN 1.35 1.75 8X b MAX A1 .0040 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 0.25 [.010] MILLIMET ERS MAX .0688 e1 6X INCHES MIN .0532 A y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER 6 www.irf.com IRF7233PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/04 www.irf.com 7