IRF7233TRPBF - International Rectifier

Parameter Max. Units

VDS Drain- Source Voltage -12 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±9.5

ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±6.0 A

IDM Pulsed Drain Current ±76

PD @TA = 25°C Power Dissipation 2.5

PD @TA = 70°C Power Dissipation 1.6

Linear Derating Factor 0.02 W/°C

EAS Single Pulse Avalanche Energy60 mJ

VGS Gate-to-Source Voltage ± 12 V

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

11/9/04

IRF7233PbF

HEXFET® Power MOSFET

Parameter Max. Units

RθJA Maximum Junction-to-Ambient50 °C/W

Thermal Resistance

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering techniques.

VDSS = -12V

RDS(on) = 0.020Ω

Description

Absolute Maximum Ratings

www.irf.com 1

lUltra Low On-Resistance

lP-Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

lLead-Free

Top View

PD - 95939

SO-8

IRF7233PbF

2www.irf.com

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V 

trr Reverse Recovery Time ––– 43 65 ns TJ = 25°C, IF = -2.5A

Qrr Reverse RecoveryCharge ––– 35 52 nC di/dt = 100A/µs 

Source-Drain Ratings and Characteristics

 

  -76

-2.5

 When mounted on 1 inch square copper board, t<10 sec

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

 Starting TJ = 25°C, L = 1.3mH

RG = 25Ω, IAS = 9.5A.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5.0mA

V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.001 ––– V/°C Reference to 25°C, ID = -1mA

––– 0.013 0.020 VGS = -4.5V, ID = -9.5A 

 0.023 0.033 VGS = -2.5V, ID = -6.0A 

VGS(th) Gate Threshold Voltage -0.6 ––– ––– V VDS = VGS, ID = -250µA

gfs Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -9.5A

––– ––– -10 VDS = -12V, VGS = 0V

––– ––– -1.0 VDS = -9.6V, VGS = 0V

––– ––– -100 VDS = -12V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

QgTotal Gate Charge ––– 49 74 ID = -9.5A

Qgs Gate-to-Source Charge ––– 9.3 14 nC VDS = -10V

Qgd Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -5.0V

td(on) Turn-On Delay Time ––– 26 ––– VDD = -10V

trRise Time ––– 540 ––– ID = -9.5A

td(off) Turn-Off Delay Time ––– 77 ––– RD = 1.0Ω

tfFall Time ––– 370 ––– RG = 6.2Ω 

Ciss Input Capacitance ––– 4530 6000 VGS = 0V

Coss Output Capacitance ––– 2400 ––– pF VDS = -10V

Crss Reverse Transfer Capacitance ––– 2220 ––– ƒ = 1.0kHz

IRF7233PbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

0246810

20µs PULSE WIDTH

T = 25°C

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

-1.5V

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

BOTTOM - 1.5V

100

0246810

20µs PULSE WIDTH

T = 150°C

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

BOTTOM - 1.5V

-1.5V

100

1.0 1.5 2.0 2.5 3.0

T = 25°C

T = 150°C

-I , Drain-to-Source Current (A)

-V , Gate-to-Source Voltage (V)

V = -10V

20µs PULSE WIDTH

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-4.5V

-9.5A

IRF7233PbF

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

2000

3000

4000

5000

6000

024681012

C, Capacitance (pF)

-V , Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

iss gs gd ds

rss gd

oss ds gd

V = 0V, f = 1kHz

C = C + C , C SHORTED

C = C

C = C + C

100

0.0 1.0 2.0 3.0

T = 25°C

T = 150°C

V = 0V

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

100

1000

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

100us

1ms

10ms

010 20 30 40 50 60 70

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

I =

D-9.5A

V =-10V

IRF7233PbF

www.irf.com 5

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150

0.0

2.0

4.0

6.0

8.0

10.0

T , Case Temperature ( C)

-I , Drain Current (A)

25 50 75 100 125 150

100

120

140

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-4.2A

-7.6A

-9.5A

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF7233PbF

6www.irf.com

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 B AS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MIL L I ME T E R SINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

8X b

0.10 [.004]

4312

F OOT PR I NT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L I NE CONF OR MS T O J E DE C OU T L I NE MS -0 12 AA.

NOT ES :

1. DIME NS IONING & T OLERANCING PE R AS ME Y14.5M-1994.

2. CONT R OL LING DIMENS ION: MILL IMET ER

3. DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES].

5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.

6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.

MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].

7 DIMENSION IS T HE L ENGT H OF LEAD FOR S OLDERING T O

A SUBS T RAT E .

MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECT IFIER

LOGO

F 7101

Y = LAS T DIGIT OF T HE YE AR

PART NUMBER

LOT CODE

WW = WE E K

EXAMPLE: T HIS IS AN IRF7101 (MOS FE T)

P = DE S IGNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

A = AS S E MB L Y S IT E CODE

IRF7233PbF

www.irf.com 7

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/04

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)