MC34071ADR2G - ON Semiconductor - Datasheet.Directory

August, 2012 − Rev. 18

1Publication Order Number:

MC34071/D

MC34071,2,4,A

MC33071,2,4,A,

NCV33072,4,A

Single Supply 3.0 V to 44 V

Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are

employed for the MC33071/72/74, MC34071/72/74, NCV33072/74A

series of monolithic operational amplifiers. This series of operational

amplifiers offer 4.5 MHz of gain bandwidth product, 13 V/ms slew rate

and fast settling time without the use of JFET device technology.

Although this series can be operated from split supplies, it is

particularly suited for single supply operation, since the common

mode input voltage range includes ground potential (VEE). With a

Darlington input stage, this series exhibits high input resistance, low

input offset voltage and high gain. The all NPN output stage,

characterized by no deadband crossover distortion and large output

voltage swing, provides high capacitance drive capability, excellent

phase and gain margins, low open loop high frequency output

impedance and symmetrical source/sink AC frequency response.

The MC33071/72/74, MC34071/72/74, NCV33072/74,A series of

devices are available in standard or prime performance (A Suffix)

grades and are specified over the commercial, industrial/vehicular or

military temperature ranges. The complete series of single, dual and

quad operational amplifiers are available in plastic DIP, SOIC, QFN

and TSSOP surface mount packages.

Features

•Wide Bandwidth: 4.5 MHz

•High Slew Rate: 13 V/ms

•Fast Settling Time: 1.1 ms to 0.1%

•Wide Single Supply Operation: 3.0 V to 44 V

•Wide Input Common Mode Voltage Range: Includes Ground (VEE)

•Low Input Offset Voltage: 3.0 mV Maximum (A Suffix)

•Large Output Voltage Swing: −14.7 V to +14 V (with ±15 V

Supplies)

•Large Capacitance Drive Capability: 0 pF to 10,000 pF

•Low Total Harmonic Distortion: 0.02%

•Excellent Phase Margin: 60°

•Excellent Gain Margin: 12 dB

•Output Short Circuit Protection

•ESD Diodes/Clamps Provide Input Protection for Dual and Quad

•NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

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See detailed ordering and shipping information in the package

dimensions section on page 17 of this data sheet.

ORDERING INFORMATION

PDIP−8

P SUFFIX

CASE 626

SOIC−8

D SUFFIX

CASE 751

PDIP−14

P SUFFIX

CASE 646

SOIC−14

D SUFFIX

CASE 751A

TSSOP−14

DTB SUFFIX

CASE 948G

See general marking information in the device marking

section on page 20 of this data sheet.

DEVICE MARKING INFORMATION

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WQFN10

MT SUFFIX

CASE 510AJ

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

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CASE 626/CASE 751

PIN CONNECTIONS

(Single, Top View)

(Dual, Top View)

Offset Null

VEE

VCC

Output

Offset Null

Inputs

VEE

Inputs 1

Inputs 2

Output 2

Output 1 VCC

+Inputs 1

Output 1

VCC

Inputs 2

Output 2

Output 4

Inputs 4

VEE

Inputs 3

Output 3

(Quad, Top View)

CASE 646/CASE 751A/CASE 948G CASE 510AJ

Output 1



In  1

In + 1 In + 2

In  2

Output 2

VCC

VEE/GND

(Top View)

Offset Null

(MC33071, MC34071 only)

Q3 Q4 Q5 Q6 Q7

Q17

Q18

C2 D3

R6 R7

Q15 Q16

Q14

Q13

Q11

Q10

Q12

R3 R4

Inputs

VCC

Output

Current

Limit

VEE/GND

Base

Current

Cancellation

Q19

Bias

Figure 1. Representative Schematic Diagram

(Each Amplifier)

MAXIMUM RATINGS

Rating Symbol Value Unit

Supply Voltage (from VEE to VCC) VS+44 V

Input Differential Voltage Range VIDR (Note 1) V

Input Voltage Range VIR (Note 1) V

Output Short Circuit Duration (Note 2) tSC Indefinite Sec

Operating Junction Temperature TJ+150 °C

Storage Temperature Range Tstg −60 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Either or both input voltages should not exceed the magnitude of VCC or VEE.

2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (see Figure 2).

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

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ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, RL = connected to ground, unless otherwise noted. See Note 3 for

TA = Tlow to Thigh)

A Suffix Non−Suffix

Characteristics Symbol Min Typ Max Min Typ Max Unit

Input Offset Voltage (RS = 100 W, VCM = 0 V, VO = 0 V)

VCC = +15 V, VEE = −15 V, TA = +25°C

VCC = +5.0 V, VEE = 0 V, TA = +25°C

VCC = +15 V, VEE = −15 V, TA = Tlow to Thigh

VIO

−

−0.5

0.5

−

3.0

5.0

−

−1.0

1.5

−

5.0

7.0

Average Temperature Coefficient of Input Offset

Voltage

RS = 10 W, VCM = 0 V, VO = 0 V,

TA = Tlow to Thigh

DVIO/DT−10 − − 10 −mV/°C

Input Bias Current (VCM = 0 V, VO = 0 V)

TA = +25°C

TA = Tlow to Thigh

IIB

−

100

−

500

700

−

100

−

500

700

Input Offset Current (VCM = 0 V, VO = 0V)

TA = +25°C

TA = Tlow to Thigh

IIO

−

6.0

−

300

−

6.0

−

300

Input Common Mode Voltage Range

TA = +25°C

TA = Tlow to Thigh

VICR

VEE to (VCC −1.8)

VEE to (VCC −2.2)

VEE to (VCC −1.8)

VEE to (VCC −2.2)

Large Signal Voltage Gain (VO = ±10 V, RL = 2.0 kW)

TA = +25°C

TA = Tlow to Thigh

AVOL

100

−

100

−

V/mV

Output Voltage Swing (VID = ±1.0 V)

VCC = +5.0 V, VEE = 0 V, RL = 2.0 kW, TA = +25°C

VCC = +15 V, VEE = −15 V, RL = 10 kW, TA = +25°C

VCC = +15 V, VEE = −15 V, RL = 2.0 kW,

TA = Tlow to Thigh

VOH

3.7

13.6

13.4

4.0

−

3.7

13.6

13.4

4.0

−

VCC = +5.0 V, VEE = 0 V, RL = 2.0 kW, TA = +25°C

VCC = +15 V, VEE = −15 V, RL = 10 kW, TA = +25°C

VCC = +15 V, VEE = −15 V, RL = 2.0 kW,

TA = Tlow to Thigh

VOL −

−

0.1

−14.7

−

0.3

−14.3

−13.5

−

0.1

−14.7

−

0.3

−14.3

−13.5

Output Short Circuit Current (VID = 1.0 V, VO = 0 V,

TA = 25°C)

Source

Sink

ISC

−

Common Mode Rejection

RS ≤ 10 kW, VCM = VICR, TA = 25°C

CMR 80 97 −70 97 −dB

Power Supply Rejection (RS = 100 W)

VCC/VEE = +16.5 V/−16.5 V to +13.5 V/−13.5 V,

TA = 25°C

PSR 80 97 −70 97 −dB

Power Supply Current (Per Amplifier, No Load)

VCC = +5.0 V, VEE = 0 V, VO = +2.5 V, TA = +25°C

VCC = +15 V, VEE = −15 V, VO = 0 V, TA = +25°C

VCC = +15 V, VEE = −15 V, VO = 0 V,

TA = Tlow to Thigh

−

1.6

1.9

−

2.0

2.5

2.8

−

1.6

1.9

−

2.0

2.5

2.8

3. Tlow =−40°C for MC33071,2,4,/A, NCV33074 Thigh = +85°C for MC33071,2,4,/A, NCV33074

=0°C for MC34071,2,4,/A = +70°C for MC34071,2,4,/A

=−40°C for MC34072,4/V, NCV33072,4A = +125°C for MC34072,4/V, NCV33072,4A

Case 510AJ Tlow/Thigh guaranteed by product characterization.

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

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AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, RL = connected to ground. TA = +25°C, unless otherwise noted.)

A Suffix Non−Suffix

Characteristics Symbol Min Typ Max Min Typ Max Unit

Slew Rate (Vin = −10 V to +10 V, RL = 2.0 kW, CL = 500 pF)

AV = +1.0

AV = −1.0

8.0

−

8.0

−

V/ms

Setting Time (10 V Step, AV = −1.0)

To 0.1% (+1/2 LSB of 9−Bits)

To 0.01% (+1/2 LSB of 12−Bits)

−

1.1

2.2

−

1.1

2.2

−

Gain Bandwidth Product (f = 100 kHz) GBW 3.5 4.5 −3.5 4.5 −MHz

Power Bandwidth

AV = +1.0, RL = 2.0 kW, VO = 20 Vpp, THD = 5.0%

BW −160 − − 160 −kHz

Phase margin

RL = 2.0 kW

RL = 2.0 kW, CL = 300 pF

−

Deg

Gain Margin

RL = 2.0 kW

RL = 2.0 kW, CL = 300 pF

−

4.0

−

4.0

−

Equivalent Input Noise Voltage

RS = 100 W, f = 1.0 kHz

en−32 − − 32 −nV/ H

√

Equivalent Input Noise Current

f = 1.0 kHz

in−0.22 − − 0.22 −pA/ H

√

Differential Input Resistance

VCM = 0 V

Rin −150 − − 150 −MW

Differential Input Capacitance

VCM = 0 V

Cin −2.5 − − 2.5 −pF

Total Harmonic Distortion

AV = +10, RL = 2.0 kW, 2.0 Vpp ≤ VO ≤ 20 Vpp, f = 10 kHz

THD −0.02 − − 0.02 −%

Channel Separation (f = 10 kHz) − − 120 − − 120 −dB

Open Loop Output Impedance (f = 1.0 MHz) |ZO|−30 − − 30 −W

Figure 2. Power Supply Configurations Figure 3. Offset Null Circuit

Single Supply Split Supplies

VCC

VEE

VCC

VEE

3.0 V to 44 V VCC+|VEE|≤44 V

Offset nulling range is approximately ±80 mV with a 10 k

potentiometer (MC33071, MC34071 only).

VCC

VEE

10 k

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

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RL Connected

to Ground TA = 25°C

RL = 10 k RL = 2.0 k

VO, OUTPUT VOLTAGE SWING (Vpp)

Figure 4. Maximum Power Dissipation versus

Temperature for Package Types

Figure 5. Input Offset Voltage versus

Temperature for Representative Units

Figure 6. Input Common Mode Voltage

Range versus Temperature

Figure 7. Normalized Input Bias Current

versus Temperature

Figure 8. Normalized Input Bias Current versus

Input Common Mode Voltage

Figure 9. Split Supply Output Voltage

Swing versus Supply Voltage

TA, AMBIENT TEMPERATURE (°C)

P, MAXIMUM POWER DISSIPATION (mW)

-55 -40 -20 0 20 40 60 80 100 120 140 160

8 & 14 Pin Plastic Pkg

SOIC-14 Pkg

SOIC-8 Pkg

TA, AMBIENT TEMPERATURE (°C)

V, INPUT OFFSET VOLTAGE (mV)

-55 -25 0 25 50 75 100 125

VCC = +15 V

VEE = -15 V

VCM = 0

TA, AMBIENT TEMPERATURE (°C)

ICR

V, INPUT COMMON MODE VOLTAGE RANGE (V)

-55 -25 0 25 50 75 100 125

VCC VCC/VEE = +1.5 V/ -1.5 V to +22 V/ -22 V

VEE

TA, AMBIENT TEMPERATURE (°C)

I, INPUT BIAS CURRENT (NORMALIZED)

-55 -25 0 25 50 75 100 125

VCC = +15 V

VEE = -15 V

VCM = 0

VIC, INPUT COMMON MODE VOLTAGE (V)

-12 -8.0 -4.0 0 4.0 8.0 12

VCC = +15 V

VEE = -15 V

TA = 25°C

VCC, |VEE|, SUPPLY VOLTAGE (V)

0 5.0 10 15 20 25

I, INPUT BIAS CURRENT (NORMALIZED)

2400

2000

1600

1200

800

400

4.0

2.0

-2.0

-4.0

VCC

VCC -0.8

VCC -1.6

VCC -2.4

VEE +0.01

VEE

1.3

1.2

1.1

1.0

0.9

0.8

0.7

1.4

1.2

1.0

0.8

0.6

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

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VCC

VCC = +15 V

RL to VCC

TA = 25°C

GND

VCC

VCC = +15 V

RL = GND

TA = 25°C

GND

VO, OUTPUT VOLTAGE SWING (Vpp)

Figure 10. Split Supply Output Saturation

versus Load Current

Figure 11. Single Supply Output Saturation

versus Load Resistance to Ground

Figure 12. Single Supply Output Saturation

versus Load Resistance to VCC

Figure 13. Output Short Circuit Current

versus Temperature

Figure 14. Output Impedance

versus Frequency

Figure 15. Output Voltage Swing

versus Frequency

0 5.0 10 15 20

IL, LOAD CURRENT (±mA)

Sink

VCC/VEE = +4.5 V/ -4.5 V to +22 V/ -22 V

Source

RL, LOAD RESISTANCE TO GROUND (W)

100 1.0 k 10 k 100 k

sat

V , OUTPUT SATURATION VOLTAGE (V)

RL, LOAD RESISTANCE TO VCC (W)

100 1.0 k 10 k 100 k

TA, AMBIENT TEMPERATURE (°C)

I, OUTPUT CURRENT (mA)

-55 -25 0 25 50 75 100 125

VCC = +15 V

VEE = -15 V

RL ≤ 0.1 W

DVin = 1.0 V

Sink

Source

f, FREQUENCY (Hz)

Z, OUTPUT IMPEDANCE ()Ω

1.0 k 10 k 100 1.0 M 10 M

AV = 1000 AV = 100 AV = 10 AV = 1.0

VCC = +15 V

VEE = -15 V

VCM = 0

VO = 0

DIO = ±0.5 mA

TA = 25°C

f, FREQUENCY (Hz)

3.0 k 10 k 30 k 100 k 300 k 1.0 M 3.0 M

VCC = +15 V

VEE = -15 V

AV = +1.0

RL = 2.0 k

THD ≤ 1.0%

TA = 25°C

sat

V , OUTPUT SATURATION VOLTAGE (V)

sat

V , OUTPUT SATURATION VOLTAGE (V)

VCC

VCC -1.0

VCC -2.0

VEE +2.0

VEE +1.0

VEE

VCC-2.0

VCC-4.0

VCC

0.2

0.1

-0.4

-0.8

2.0

1.0

8.0

4.0

−40

125

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

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1. Phase RL = 2.0 k

2. Phase RL = 2.0 k, CL = 300 pF

3. Gain RL = 2.0 k

4. Gain RL = 2.0 k, CL = 300 pF

VCC = +15 V

VEE = 15 V

VO = 0 VTA = 25°C

Phase

Margin = 60°

Gain

Margin = 12 dB

Gain

VCC = +15 V

VEE = -15 V

VO = 0 V

RL = 2.0 k

TA = 25°C

Phase

Margin

= 60°

Figure 16. Total Harmonic Distortion

versus Frequency

Figure 17. Total Harmonic Distortion

versus Output Voltage Swing

Figure 18. Open Loop Voltage Gain

versus Temperature

Figure 19. Open Loop Voltage Gain and

Phase versus Frequency

Figure 20. Open Loop Voltage Gain and

Phase versus Frequency

Figure 21. Normalized Gain Bandwidth

Product versus Temperature

f, FREQUENCY (Hz)

10 100 1.0 k 10 k 100 k

AV = 1000

AV = 100

AV = 10

AV = 1.0

VCC = +15 V

VEE = -15 V

VO = 2.0 Vpp

RL = 2.0 k

TA = 25°C

VO, OUTPUT VOLTAGE SWING (Vpp)

THD, TOTAL HARMONIC DISTORTION (%)

0 4.0 8.0 12 16 20

VCC = +15 V

VEE = -15 V

RL = 2.0 k

TA = 25°C

AV = 1000

AV = 100

AV = 10

AV = 1.0

TA, AMBIENT TEMPERATURE (°C)

-55 -25 0 25 50 75 100 125

VCC = +15 V

VEE = -15 V

VO= -10 V to +10 V

RL = 10 k

f ≤ 10Hz

f, FREQUENCY (Hz)

1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M 100 M

, EXCESS PHASE (DEGREES)

f, FREQUENCY (MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30

TA, AMBIENT TEMPERATURE (°C)

GBW, GAIN BANDWIDTH PRODUCT (NORMALIED)

-55 -25 0 25 50 75 100 125

VCC = +15 V

VEE = -15 V

RL = 2.0 k

VOL

A, OPEN LOOP VOLTAGE GAIN (dB)

0.4

0.3

0.2

0.1

4.0

3.0

2.0

1.0

116

112

108

104

100

-10

-20

-30

-40

1.15

1.1

1.05

1.0

0.95

0.9

0.85

135

180

100

120

140

160

180

THD, TOTAL HARMONIC DISTORTION (%)

VOL

A, OPEN LOOP VOLTAGE GAIN (dB)

VOL

A, OPEN LOOP VOLTAGE GAIN (dB)

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

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VCC = +15 V

VEE = -15 V

AV = +1.0

RL = 2.0 k to R

VO = -10 V to +10 V

TA = 25°C

Figure 22. Percent Overshoot versus

Load Capacitance

Figure 23. Phase Margin versus

Load Capacitance

Figure 24. Gain Margin versus Load Capacitance Figure 25. Phase Margin versus Temperature

Figure 26. Gain Margin versus Temperature Figure 27. Phase Margin and Gain Margin

versus Differential Source Resistance

PERCENT OVERSHOOT

CL, LOAD CAPACITANCE (pF)

10 100 1.0 k 10 k

VCC = +15 V

VEE = -15 V

RL = 2.0 k

VO = -10 V to +10 V

TA = 25°C

CL, LOAD CAPACITANCE (pF)

, PHASE MARGIN (DEGREES)φm

10 100 1.0 k 10 k

VCC = +15 V

VEE = -15 V

AV = +1.0

RL = 2.0 k to ∞

VO = -10 V to +10 V

TA = 25°C

CL, LOAD CAPACITANCE (pF)

A, GAIN MARGIN (dB)

10 100 1.0 k 10 k

, PHASE MARGIN (DEGREES)φm

TA, AMBIENT TEMPERATURE (°C)

-55 -25 0 25 50 75 100 125

VCC = +15 V

VEE = -15 V

AV = +1.0

RL = 2.0 k to ∞

VO = -10 V to +10 V

CL = 10 pF

CL = 100 pF

CL = 1,000 pF

CL = 10,000 pF

TA, AMBIENT TEMPERATURE (°C)

-55 -25 0 25 50 75 100 125

VCC = +15 V

VEE = -15 V

AV = +1.0

RL = 2.0 k to ∞

VO = -10 V to +10 V

CL = 10 pF

CL = 1,000 pF

A, GAIN MARGIN (dB)

CL = 100 pF

CL = 10,000 pF

Phase

A, GAIN MARGIN (dB)

RT, DIFFERENTIAL SOURCE RESISTANCE (W)

1.0 100 1.0 k 10 k10 100 k

VCC = +15 V

VEE = -15 V

RT = R1 + R2

AV = +100

VO = 0 V

TA = 25°C

Gain

, PHASE MARGIN (DEGREES)φm

100

8.0

6.0

2.0

4.0

8.0

4.0

8.0

6.0

4.0

2.0

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

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Figure 28. Normalized Slew Rate

versus Temperature

Figure 29. Output Settling Time

Figure 30. Small Signal Transient Response Figure 31. Large Signal Transient Response

Figure 32. Common Mode Rejection

versus Frequency

Figure 33. Power Supply Rejection

versus Frequency

TA, AMBIENT TEMPERATURE (°C)

SR, SLEW RATE (NORMALIZED)

-55 -25 0 25 50 75 100 125

VCC = +15 V

VEE = -15 V

AV = +1.0

RL = 2.0 k

CL = 500 pF

ts, SETTLING TIME (ms)

V, OUTPUT VOLTAGE SWING FROM 0 V (V)

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VCC = +15 V

VEE = -15 V

AV = -1.0

TA = 25°C

10 mV

1.0 mV

Compensated

Uncompensated

10 mV

1.0 mV

50 mV/DIV

2.0 ms/DIV

VCC = +15 V

VEE = -15 V

AV = +1.0

RL = 2.0 k

CL = 300 pF

TA = 25°C

5.0 V/DIV

1.0 ms/DIV

f, FREQUENCY (Hz)

CMR, COMMON MODE REJECTION (dB)

0.1 1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M

TA = 25°C

TA = 125°C

TA = -55°C

VCC = +15 V

VEE = -15 V

VCM = 0 V

DVCM = ±1.5 V

f, FREQUENCY (Hz)

PSR, POWER SUPPLY REJECTION (dB)

0.1 1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M

VCC = +15 V

VEE = -15 V

TA = 25°C

(DVCC = +1.5 V)

(DVEE = +1.5 V)

+PSR

-PSR

VCC = +15 V

VEE = -15 V

AV = +1.0

RL = 2.0 k

CL = 300 pF

TA = 25°C

1.15

1.1

1.05

1.0

0.95

0.9

0.85

5.0

-5.0

-10

100

DVCM DVO

ADM

CMR = 20 Log DVCM

DVO

x ADM

DVO

ADM

DVCC

DVEE

DVO/ADM

DVCC

+PSR = 20 Log

DVO/ADM

DVEE

-PSR = 20 Log

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

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Figure 34. Supply Current versus

Supply Voltage

Figure 35. Power Supply Rejection

versus Temperature

Figure 36. Channel Separation versus Frequency Figure 37. Input Noise versus Frequency

VCC, |VEE|, SUPPLY VOLTAGE (V)

I , SUPPLY CURRENT (mA)

0 5.0 10 15 20 25

TA = 25°C

TA = 125°C

TA = -55°C

TA, AMBIENT TEMPERATURE (°C)

PSR, POWER SUPPLY REJECTION (dB)

-55 -25 0 25 50 75 100 125

VCC = +15 V

VEE = -15 V

(DVCC = +1.5 V)

(DVEE = +1.5 V)

+PSR

-PSR

f, FREQUENCY (kHz)

CHANNEL SEPARATION (dB)

10 20 30 50 70 100 200 300

VCC = +15 V

VEE = -15 V

TA = 25°C

f, FREQUENCY (kHz)

e, INPUT NOICE VOLTAGE (

i, INPUT NOISE CURRENT (pA )

10 100 1.0 k 10 k 100 k

nV Hz)

√

Voltage

Current

9.0

8.0

7.0

6.0

5.0

4.0

105

120

100

2.8

2.4

2.0

1.6

1.2

0.8

0.4

DVO

ADM

DVCC

DVEE

DVO/ADM

DVCC

+PSR = 20 Log

DVO/ADM

DVEE

-PSR = 20 Log

VCC = +15 V

VEE = -15 V

VCM = 0

TA = 25°C

Quad device

APPLICATIONS INFORMATION

CIRCUIT DESCRIPTION/PERFORMANCE FEATURES

Although the bandwidth, slew rate, and settling time of the

MC34071 amplifier series are similar to op amp products

utilizing JFET input devices, these amplifiers offer other

additional distinct advantages as a result of the PNP

transistor differential input stage and an all NPN transistor

output stage.

Since the input common mode voltage range of this input

stage includes the VEE potential, single supply operation is

feasible to as low as 3.0 V with the common mode input

voltage at ground potential.

The input stage also allows differential input voltages up

to ±44 V, provided the maximum input voltage range is not

exceeded. Specifically, the input voltages must range

between VEE and VCC supply voltages as shown by the

maximum rating table. In practice, although not

recommended, the input voltages can exceed the VCC

voltage by approximately 3.0 V and decrease below the VEE

voltage by 0.3 V without causing product damage, although

output phase reversal may occur. It is also possible to source

up to approximately 5.0 mA of current from VEE through

either inputs clamping diode without damage or latching,

although phase reversal may again occur.

If one or both inputs exceed the upper common mode

voltage limit, the amplifier output is readily predictable and

may be in a low or high state depending on the existing input

bias conditions.

Since the input capacitance associated with the small

geometry input device is substantially lower (2.5 pF) than

the typical JFET input gate capacitance (5.0 pF), better

frequency response for a given input source resistance can

be achieved using the MC34071 series of amplifiers. This

performance feature becomes evident, for example, in fast

settling D−to−A current to voltage conversion applications

where the feedback resistance can form an input pole with

the input capacitance of the op amp. This input pole creates

a 2nd order system with the single pole op amp and is

therefore detrimental to its settling time. In this context,

lower input capacitance is desirable especially for higher

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

values of feedback resistances (lower current DACs). This

input pole can be compensated for by creating a feedback

zero with a capacitance across the feedback resistance, if

necessary, to reduce overshoot. For 2.0 kW of feedback

resistance, the MC34071 series can settle to within 1/2 LSB

of 8−bits in 1.0 ms, and within 1/2 LSB of 12−bits in 2.2 ms

for a 10 V step. In a inverting unity gain fast settling

configuration, the symmetrical slew rate is ±13 V/ms. In the

classic noninverting unity gain configuration, the output

positive slew rate is +10 V/ms, and the corresponding

negative slew rate will exceed the positive slew rate as a

function of the fall time of the input waveform.

Since the bipolar input device matching characteristics

are superior to that of JFETs, a low untrimmed maximum

offset voltage of 3.0 mV prime and 5.0 mV downgrade can

be economically offered with high frequency performance

characteristics. This combination is ideal for low cost

precision, high speed quad op amp applications.

The all NPN output stage, shown in its basic form on the

equivalent circuit schematic, offers unique advantages over

the more conventional NPN/PNP transistor Class AB output

stage. A 10 kW load resistance can swing within 1.0 V of the

positive rail (VCC), and within 0.3 V of the negative rail

(VEE), providing a 28.7 Vpp swing from ±15 V supplies.

This large output swing becomes most noticeable at lower

supply voltages.

The positive swing is limited by the saturation voltage of

the current source transistor Q7, and VBE of the NPN pull up

transistor Q17, and the voltage drop associated with the short

circuit resistance, R7. The negative swing is limited by the

saturation voltage of the pull−down transistor Q16, the

voltage drop ILR6, and the voltage drop associated with

resistance R7, where IL is the sink load current. For small

valued sink currents, the above voltage drops are negligible,

allowing the negative swing voltage to approach within

millivolts of VEE. For large valued sink currents (>5.0 mA),

diode D3 clamps the voltage across R6, thus limiting the

negative swing to the saturation voltage of Q16, plus the

forward diode drop of D3 (≈VEE +1.0 V). Thus for a given

supply voltage, unprecedented peak−to−peak output voltage

swing is possible as indicated by the output swing

specifications.

If the load resistance is referenced to VCC instead of

ground for single supply applications, the maximum

possible output swing can be achieved for a given supply

voltage. For light load currents, the load resistance will pull

the output to VCC during the positive swing and the output

will pull the load resistance near ground during the negative

swing. The load resistance value should be much less than

that of the feedback resistance to maximize pull up

capability.

Because the PNP output emitter−follower transistor has

been eliminated, the MC34071 series offers a 20 mA

minimum current sink capability, typically to an output

voltage of (VEE +1.8 V). In single supply applications the

output can directly source or sink base current from a

common emitter NPN transistor for fast high current

switching applications.

In addition, the all NPN transistor output stage is

inherently fast, contributing to the bipolar amplifier’s high

gain bandwidth product and fast settling capability. The

associated high frequency low output impedance (30 W typ

@ 1.0 MHz) allows capacitive drive capability from 0 pF to

10,000 pF without oscillation in the unity closed loop gain

configuration. The 60° phase margin and 12 dB gain margin

as well as the general gain and phase characteristics are

virtually independent of the source/sink output swing

conditions. This allows easier system phase compensation,

since output swing will not be a phase consideration. The

high frequency characteristics of the MC34071 series also

allow excellent high frequency active filter capability,

especially for low voltage single supply applications.

Although the single supply specifications is defined at

5.0 V, these amplifiers are functional to 3.0 V @ 25°C

although slight changes in parametrics such as bandwidth,

slew rate, and DC gain may occur.

If power to this integrated circuit is applied in reverse

polarity or if the IC is installed backwards in a socket, large

unlimited current surges will occur through the device that

may result in device destruction.

Special static precautions are not necessary for these

bipolar amplifiers since there are no MOS transistors on the

die.

As with most high frequency amplifiers, proper lead

dress, component placement, and PC board layout should be

exercised for optimum frequency performance. For

example, long unshielded input or output leads may result in

unwanted input−output coupling. In order to preserve the

relatively low input capacitance associated with these

amplifiers, resistors connected to the inputs should be

immediately adjacent to the input pin to minimize additional

stray input capacitance. This not only minimizes the input

pole for optimum frequency response, but also minimizes

extraneous “pick up” at this node. Supply decoupling with

adequate capacitance immediately adjacent to the supply pin

is also important, particularly over temperature, since many

types of decoupling capacitors exhibit great impedance

changes over temperature.

The output of any one amplifier is current limited and thus

protected from a direct short to ground. However, under

such conditions, it is important not to allow the device to

exceed the maximum junction temperature rating. Typically

for ±15 V supplies, any one output can be shorted

continuously to ground without exceeding the maximum

temperature rating.

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

Figure 38. AC Coupled Noninverting Amplifier Figure 39. AC Coupled Inverting Amplifier

(Typical Single Supply Applications VCC = 5.0 V)

Figure 40. DC Coupled Inverting Amplifier

Maximum Output Swing

Figure 41. Unity Gain Buffer TTL Driver

Figure 42. Active High−Q Notch Filter Figure 43. Active Bandpass Filter

VCC

5.1 M

20 k Cin

Vin

1.0 M

MC34071

03.7 Vpp

10 k

AV = 101

100 k

1.0 k

BW (-3.0 dB) = 45 kHz

COVO

36.6 mVpp

3.7 Vpp

VCC

100 k

Cin 10 k

100 k

10 k

68 k

Vin 370 mVpp

AV = 10 BW (-3.0 dB) = 450 kHz

4.75 Vpp

VCC

100 k

91 k

5.1 k

1.0 M

AV = 10

Vin

2.63 V

5.1 k

BW (-3.0 dB) = 450 kHz

Vin

2.5 V

0 0 to 10,000 pF

Cable TTL Gate

Vin

16 k

0.01

32 k 2.0 R

2.0 C

0.02

fo = 1.0 kHz

fo =

Vin ≥ 0.2 Vdc

4pRC

2.0 C

0.02

16 k

Vin VO

VCC

2.2 k

0.047

5.6 k

0.4 VCC

fo = 30 kHz

Ho = 10

Ho = 1.0

1.1 k

Given fo = Center Frequency

AO = Gain at Center Frequency

Choose Value fo, Q, Ao, C

R3 =  R1 =  R2 =

Q R3 R1 R3

2Ho4Q2R1-R3

pfoC

For less than 10% error from operational amplifier

Qofo

GBW < 0.1

where fo and GBW are expressed in Hz.

0.047

MC34071

MC54/74XX

Then:

GBW = 4.5 MHz Typ.

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

Figure 44. Low Voltage Fast D/A Converter Figure 45. High Speed Low Voltage Comparator

Figure 46. LED Driver Figure 47. Transistor Driver

Figure 48. AC/DC Ground Current Monitor Figure 49. Photovoltaic Cell Amplifier

5.0 k

10 k

Bit

Switches

VCC

(R-2R) Ladder Network

Settling Time

1.0 ms (8-Bits, 1/2 LSB)

5.0 k5.0 k

10 k 10 k

Vin

1.0 V

2.0 k

2.0 V

4.0 V

0.1

25 V/ms

0.2 ms

Delay

1.0 ms

Vin

13 V/ms

VCC

Vref

“ON"

Vin < Vref

“ON"

Vin > Vref

Vin

VCC

(A) PNP (B) NPN

ILoad

Ground Current

Sense Resistor

VO = ILoad RS

BW ( -3.0 dB) = GBW

For VO > 0.1V

R1+R2

MC34071

ICell

VCell = 0 V

VO = ICell RF

VO > 0.1 V

MC34071

MC34071 MC34071

MC34071

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

Figure 50. Low Input Voltage Comparator

with Hysteresis

Figure 51. High Compliance Voltage to

Sink Current Converter

Figure 52. High Input Impedance

Differential Amplifier

Figure 53. Bridge Current Amplifier

Figure 54. Low Voltage Peak Detector Figure 55. High Frequency Pulse

Width Modulation

Vref

VOH

VOL

VinL VinH

Vref

Hysteresis

Vin

MC34071

VinL =(V

OL-Vref)+Vref

R1+R2

VinH =(V

OH-Vref)+Vref

VH =(V

OH -VOL)

R1+R

R1+R2

Vin

Iout

Iout = Vin±VIO

1/2

MC34072 -

R1 R2

+V1

+V2

R2 R4

R3R1 (Critical to CMRR)

VO = 1 V2-V1

For (V2 ≥ V1), V > 0

+R4

+Vref

R = DR

DR < < R

RF > > R (VO ≥ 0.1 V)

VO = Vref

DR RF

2R2

Vin

RLVP10,000 pF

VO = Vin (pk)

Iout

ISC

Base Charge

Removal

±IB

V+

47 k

100 k

Pulse Width

Control Group

OSC Comparator High Current

Output

fOSC ^

0.85

100 k

MC34071

1/2

MC34072

1/2

MC34072

1/2

MC34072

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

Figure 56. Second Order Low−Pass Active Filter Figure 57. Second Order High−Pass Active Filter

GENERAL ADDITIONAL APPLICATIONS INFORMATION VS = ±15.0 V

Figure 58. Fast Settling Inverter Figure 59. Basic Inverting Amplifier

Figure 60. Basic Noninverting Amplifier Figure 61. Unity Gain Buffer (AV = +1.0)

R1 R3

560 510

0.44

0.02

5.6 k

MC34071

fo = 1.0 kHz

Ho = 10

Choose: fo, Ho, C2

Then: C1 = 2C2 (Ho+1)

R2 = R3 = R1 =

Ho+1

4pfoC2

0.05 C1

1.0

46.1 k

1.1 k

fo = 100 Hz

Ho = 20

Choose: fo, Ho, C1 Then: R1 =

R2 =

C2 =

Ho+0.5

pfoC1

2pfoC1 (1/Ho+2)

1.0

CF*

VO = 10 V

Step

2.0 k

High Speed

DAC

*Optional Compensation

Uncompensated

Compensated

ts = 1.0 ms

to 1/2 LSB (8-Bits)

ts = 2.2 ms

to 1/2 LSB (12-Bits)

SR = 13 V/ms

Vin

BW (-3.0 dB) = GBW

SR = 13 V/ms

Vin

R1 R1 +R2

BW (-3.0 dB) = GBW R1 +R2

Vin

1 +

Vin

BWp = 200 kHz

VO = 20 Vpp

SR = 10 V/ms

MC34071

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

Figure 62. High Impedance Differential Amplifier

Figure 63. Dual Voltage Doubler

Example:

Let: R = RE = 12 k

Then: AV = 3.0

BW = 1.5 MHz

AV = 1 +2 R

MC34074

100 k 10

+10

-10

220 pF

-VO

+VO

RL+VO-VO

18.93 -18.78

10 k 18 -18

5.0 k 15.4 -15.4

∞

100 k

MC34074

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

ORDERING INFORMATION

Op Amp

Function Device

Operating

Temperature Range Package Shipping†

Single

MC34071PG

TA = 0° to +70°C

PDIP−8

(Pb−Free) 50 Units / Rail

MC34071APG PDIP−8

(Pb−Free) 50 Units / Rail

MC34071DG SOIC−8

(Pb−Free) 98 Units / Rail

MC34071DR2G SOIC−8

(Pb−Free) 2500 / Tape & Reel

MC34071ADG SOIC−8

(Pb−Free) 98 Units / Rail

MC34071ADR2G SOIC−8

(Pb−Free) 2500 / Tape & Reel

MC33071PG

TA = −40° to +85°C

PDIP−8

(Pb−Free) 50 Units / Rail

MC33071APG PDIP−8

(Pb−Free) 50 Units / Rail

MC33071DG SOIC−8

(Pb−Free) 98 Units / Rail

MC33071DR2G SOIC−8

(Pb−Free) 2500 / Tape & Reel

MC33071ADG SOIC−8

(Pb−Free) 98 Units / Rail

MC33071ADR2G SOIC−8

(Pb−Free) 2500 / Tape & Reel

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

ORDERING INFORMATION (continued)

Op Amp

Function Device

Operating

Temperature Range Package Shipping†

Dual

MC34072PG

TA = 0° to +70°C

PDIP−8

(Pb−Free) 50 Units / Rail

MC34072APG PDIP−8

(Pb−Free)

MC34072DG SOIC−8

(Pb−Free) 98 Units / Rail

MC34072ADG SOIC−8

(Pb−Free)

MC34072DR2G SOIC−8

(Pb−Free) 2500 Units / Tape & Reel

MC34072ADR2G SOIC−8

(Pb−Free)

MC34072AMTTBG WQFN10

(Pb−Free) 3000 Units / Tape & Reel

MC33072PG

TA = −40° to +85°C

PDIP−8

(Pb−Free) 50 Units / Rail

MC33072APG PDIP−8

(Pb−Free)

MC33072DG SOIC−8

(Pb−Free) 98 Units / Rail

MC33072ADG SOIC−8

(Pb−Free)

MC33072DR2G SOIC−8

(Pb−Free) 2500 / Tape & Reel

MC33072ADR2G SOIC−8

(Pb−Free)

MC34072VDG

TA = −40° to +125°C

SOIC−8

(Pb−Free) 98 Units / Rail

MC34072VDR2G SOIC−8

(Pb−Free) 2500 / Tape & Reel

MC34072VPG PDIP−8

(Pb−Free) 50 Units / Rail

NCV33072DR2G* SOIC−8

(Pb−Free)

2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NCV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q100 qualified and PPAP

capable.

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

ORDERING INFORMATION (continued)

Op Amp

Function Device

Operating

Temperature Range Package Shipping†

Quad

MC34074PG

TA = 0° to +70°C

PDIP−14

(Pb−Free) 25 Units / Rail

MC34074APG PDIP−14

(Pb−Free)

MC34074DG SOIC−14

(Pb−Free) 55 Units / Rail

MC34074ADG SOIC−14

(Pb−Free)

MC34074ADR2G SOIC−14

(Pb−Free) 2500 Units / Tape & Reel

MC34074DR2G SOIC−14

(Pb−Free)

MC33074PG

TA = −40° to +85°C

PDIP−14

(Pb−Free) 25 Units / Rail

MC33074APG PDIP−14

(Pb−Free)

MC33074DG SOIC−14

(Pb−Free) 55 Units / Rail

MC33074ADG SOIC−14

(Pb−Free)

MC33074DR2G SOIC−14

(Pb−Free) 2500 / Tape & Reel

MC33074ADR2G SOIC−14

(Pb−Free)

MC33074DTBG TSSOP−14

(Pb−Free) 96 Units / Rail

MC33074DTBR2G TSSOP−14

(Pb−Free) 2500 / Tape & Reel

MC33074ADTBG TSSOP−14

(Pb−Free) 96 Units / Rail

MC33074ADTBR2G TSSOP−14

(Pb−Free) 2500 / Tape & Reel

NCV33074DR2G* SOIC−14

(Pb−Free) 2500 / Tape & Reel

MC34074VDG

TA = −40° to +125°C

SOIC−14

(Pb−Free) 55 Units / Rail

MC34074VDR2G SOIC−14

(Pb−Free) 2500 / Tape & Reel

MC34074VPG PDIP−14

(Pb−Free) 25 Units / Rail

NCV33074ADTBR2G* TSSOP−14

(Pb−Free) 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NCV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q100 qualified and PPAP

capable.

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

MARKING DIAGRAMS

AWL

MC3x071P

YYWWG AWL

MC3x071AP

YYWWG

x = 3 or 4

A = Assembly Location

WL, L = Wafer Lot

YY, Y = Year

WW, W = Work Week

G or  = Pb−Free Package

AWL

MC3x072P

YYWWG

PDIP−8

P SUFFIX

CASE 626

AWL

MC3x072AP

YYWWG

SOIC−8

D SUFFIX

CASE 751

MC3x074P

AWLYYWWG

PDIP−14

P SUFFIX

CASE 646

MC3x074AP

AWLYYWWG

MC33

074

ALYW



TSSOP−14

DTB SUFFIX

CASE 948G

SOIC−14

D SUFFIX

CASE 751A

AWL

MC34072VP

YYWWG

MC34074VP

AWLYYWWG

3x071

ALYW



3x071

ALYWA



3x072

ALYW



MC3x074DG

AWLYWW

MC3x074ADG

AWLYWW

MC34074VDG

AWLYWW

3x072

ALYWA



34072

ALYWV



(Note: Microdot may be in either location)

MC33

074A

ALYW



NCV3

074A

ALYW



WQFN10

MT SUFFIX

CASE 510AJ

4072

AAYW



MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

PACKAGE DIMENSIONS

8 LEAD PDIP

CASE 626−05

ISSUE M

NOTE 5

TOP VIEW

CSEATING

PLANE

0.010 CA

SIDE VIEW

END VIEW

NOTE 3

DIM MIN NOM MAX

INCHES

A−−−− −−−− 0.210

A1 0.015 −−−− −−−−

b0.014 0.018 0.022

C0.008 0.010 0.014

D0.355 0.365 0.400

D1 0.005 −−−− −−−−

e0.100 BSC

E0.300 0.310 0.325

L0.115 0.130 0.150

−−−− −−−− 5.33

0.38 −−−− −−−−

0.35 0.46 0.56

0.20 0.25 0.36

9.02 9.27 10.02

0.13 −−−− −−−−

2.54 BSC

7.62 7.87 8.26

2.92 3.30 3.81

MIN NOM MAX

MILLIMETERS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. DIMENSION E IS MEASURED WITH THE LEADS RE-

STRAINED PARALLEL AT WIDTH E2.

4. DIMENSION E1 DOES NOT INCLUDE MOLD FLASH.

5. ROUNDED CORNERS OPTIONAL.

E1 0.240 0.250 0.280 6.10 6.35 7.11

E3 −−−− −−−− 0.430 −−−− −−−− 10.92

0.300 BSC 7.62 BSC

e/2

PDIP−14

CASE 646−06

ISSUE P

14 8

ADIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.715 0.770 18.16 19.56

B0.240 0.260 6.10 6.60

C0.145 0.185 3.69 4.69

D0.015 0.021 0.38 0.53

F0.040 0.070 1.02 1.78

G0.100 BSC 2.54 BSC

H0.052 0.095 1.32 2.41

J0.008 0.015 0.20 0.38

K0.115 0.135 2.92 3.43

M−−− 10 −−− 10

N0.015 0.039 0.38 1.01



NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEADS WHEN

FORMED PARALLEL.

4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.

5. ROUNDED CORNERS OPTIONAL.

HG D

SEATING

PLANE

−T−

14 PL

0.13 (0.005)

J0.290 0.310 7.37 7.87

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

PACKAGE DIMENSIONS

TSSOP−14

CASE 948G

ISSUE B

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A4.90 5.10 0.193 0.200

B4.30 4.50 0.169 0.177

C−−− 1.20 −−− 0.047

D0.05 0.15 0.002 0.006

F0.50 0.75 0.020 0.030

G0.65 BSC 0.026 BSC

H0.50 0.60 0.020 0.024

J0.09 0.20 0.004 0.008

J1 0.09 0.16 0.004 0.006

K0.19 0.30 0.007 0.012

K1 0.19 0.25 0.007 0.010

L6.40 BSC 0.252 BSC

M0 8 0 8

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A DOES NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

MOLD FLASH OR GATE BURRS SHALL NOT

EXCEED 0.15 (0.006) PER SIDE.

4. DIMENSION B DOES NOT INCLUDE

INTERLEAD FLASH OR PROTRUSION.

INTERLEAD FLASH OR PROTRUSION SHALL

NOT EXCEED 0.25 (0.010) PER SIDE.

5. DIMENSION K DOES NOT INCLUDE

DAMBAR PROTRUSION. ALLOWABLE

DAMBAR PROTRUSION SHALL BE 0.08

(0.003) TOTAL IN EXCESS OF THE K

DIMENSION AT MAXIMUM MATERIAL

CONDITION.

6. TERMINAL NUMBERS ARE SHOWN FOR

REFERENCE ONLY.

7. DIMENSION A AND B ARE TO BE

DETERMINED AT DATUM PLANE −W−.



U0.15 (0.006) T

2X L/2

0.10 (0.004) V S

L−U−

SEATING

PLANE

0.10 (0.004)

−T−

ÇÇÇ

SECTION N−N

DETAIL E

JJ1

ÉÉÉ

DETAIL E

−W−

0.25 (0.010)

PIN 1

IDENT.

U0.15 (0.006) T

−V−

14X REFK

7.06

14X

0.36 14X

1.26

0.65

DIMENSIONS: MILLIMETERS

PITCH

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

PACKAGE DIMENSIONS

SOIC−8 NB

CASE 751−07

ISSUE AK

SEATING

PLANE

X 45 

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE

MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL

IN EXCESS OF THE D DIMENSION AT

MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW

STANDARD IS 751−07.

0.10 (0.004)

DIM

MIN MAX MIN MAX

INCHES

4.80 5.00 0.189 0.197

MILLIMETERS

B3.80 4.00 0.150 0.157

C1.35 1.75 0.053 0.069

D0.33 0.51 0.013 0.020

G1.27 BSC 0.050 BSC

H0.10 0.25 0.004 0.010

J0.19 0.25 0.007 0.010

K0.40 1.27 0.016 0.050

M0 8 0 8

N0.25 0.50 0.010 0.020

S5.80 6.20 0.228 0.244

−X−

−Y−

0.25 (0.010)

−Z−

0.25 (0.010) ZSXS



1.52

0.060

7.0

0.275

0.6

0.024

1.270

0.050

4.0

0.155

ǒmm

inchesǓ

SCALE 6:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

PACKAGE DIMENSIONS

SOIC−14

CASE 751A−03

ISSUE K

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE PROTRUSION

SHALL BE 0.13 TOTAL IN EXCESS OF AT

MAXIMUM MATERIAL CONDITION.

4. DIMENSIONS D AND E DO NOT INCLUDE

MOLD PROTRUSIONS.

5. MAXIMUM MOLD PROTRUSION 0.15 PER

SIDE.

14 8

0.25 B M

X 45

SEATING

PLANE



0.25 B S

13X

DETAIL A

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

D8.55 8.75 0.337 0.344

E3.80 4.00 0.150 0.157

A1.35 1.75 0.054 0.068

b0.35 0.49 0.014 0.019

L0.40 1.25 0.016 0.049

e1.27 BSC 0.050 BSC

A3 0.19 0.25 0.008 0.010

A1 0.10 0.25 0.004 0.010

M0 7 0 7

H5.80 6.20 0.228 0.244

h0.25 0.50 0.010 0.019

 

6.50

14X

0.58

14X

1.18

1.27

DIMENSIONS: MILLIMETERS

PITCH

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A

http://onsemi.com

PACKAGE DIMENSIONS

WQFN10

CASE 510AJ

ISSUE A

ÍÍÍ

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED

TERMINAL AND IS MEASURED BETWEEN

0.15 AND 0.30mm FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED

PAD AS WELL AS THE TERMINALS.

CSEATING

PLANE

0.15 C

DIM

MIN MAX

MILLIMETERS

0.70 0.80

A1 0.00 0.05

A3 0.20 REF

b0.20 0.30

D2.60 BSC

E2.60 BSC

0.55 0.65

e0.50 BSC

PIN ONE

REFERENCE

0.08 C

0.10 C

A0.10 C

10X

0.05 C

0.45 0.55

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

2.90

0.73

0.50

0.30

10X

DIMENSIONS: MILLIMETERS

TOP VIEW

SIDE VIEW

BOTTOM VIEW

DETAIL A

ALTERNATE TERMINAL

CONSTRUCTIONS

ÉÉÉ

DETAIL B

MOLD CMPDEXPOSED Cu

ALTERNATE

CONSTRUCTIONS

DETAIL B

DETAIL A

0.00 0.15

PITCH

10X

NOTE 3

NOTE 4

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