COMPLEMENTARY SILICON POWER TRANSISTORS
The 2N3773 and 2N6609 are EPI-BASE Apower transistors de-
signed for high power audio, disk head positioners and other linear
applications, These devices can also be used in power switching cir-
cuits such as relay or solenoid drivers, dc to dc converters or inverters,
~: ..~
*MAXIMUM RATINGS :$r~>s;~x{>
Rating ISymbol IValue IUnit
Collector Emitter Voltage VPFO 140 Vdc
Collector-Emitter Voltaget;4* ‘“:$: VCEX 160 Vdc
,. ,,.:<,,4.. ,.
Collector-Base Voltage $, %:~,,~?’ VCBO 160
..... Vdc
Emitter-Base Voltaq~+Ia,fi
....>\.~:.t, ~VEBO 7Vdc
Collector Currenr”*~~tinuous Ic 16 Adc
.,.$v:~-%ak (1) 30
Base Curre#~ –$~;tinUOUS IB 4Adc
.,t*!]\‘X:**+$?ea~(I]
,4,s .. 15
To~l ‘p~=er~issipation @Tc =25°C pD 150 Watts
‘:~~ti--abo”e *50C 0.855 Wloc
Opefiting and Storage Junction ITJ rTstg -65 to +200 I‘c
Temperature Ranqe I
THERMAL CHARACTERISTICS 1
Characteristic ISymbol Max Unit
Thermal Resistance, Junction to Case ROJC 1.17 Oclw \
I
,~=~+ ,’
+1 c
B
rDK’
ESEATING
PLANE
.Fd
J
DIA. Q
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R
H
4r.
.,. ..
;:
,. ,’
,
,1 ,,
.,,
:ELECTRICAL CHARACTERISTICS (Tc =25°C unless otherwise noted.)
ICharacteristic ISVmbol Min IMax
OFF CHARACTERISTICS (1) ,<.>:,+”t, .-**$,~.\
●Collector-Emitter Breakdown Voltaga VCEO(sus) 140
(IC ‘0.2 Adc, tB ‘O)
—
*Collector-Emitter Sustaining Voltage VCEX(su~) 160
(Ic =0.1 Adc, VBE(off) =1.5 Vdc, RBE =100 Ohms)
—
‘:Collector-Emitter Sustaining Voltage VCER(~u~} 150
(Ic =0,2 Adc, RBE =100 Ohms)
*Collector Cutoff Current icEO .**,t*\
(VCE =120 Vdc, IB =0) mAdc
—,, “.:f?~~~ Q
.\.i~’,..+
*Collector Cutoff Current !cEX /,.\ ,. ~.~ mAdc
(VCE =140 Vdc, VBE(off) =1.5 Vdc ~~~:,.,* ..’.
.:.,, ,,,.
*?F~,:\:l)’“2
(VCE =140 Vdc, VBE(off) =1.5 Vdc, Tc =150°C) -,,. .. ..,,,,,
“\.-$,’b.:.,,K,y
_.:\,,
*L,\10
Collector Cutoff Current IcBO ...’ ~*:j_
.,.,, 2mAdc
(VCB =140 Vdc, IE =O) .~:x<,>,~..
1,,:
‘.~:~;\.
,:\:,,.,:-~~!..,y,
*Emittar Cutoff Current
(VBE =7Vdc, IC “O) 5mAdc
ON CHARACTERISTICS (1) .*
,.
DC Current Gain ~
*(IC =8Adc, VCE =4Vdc) -..;,..’ .,*,4$. 15
(IC =16 Adc, VCE ‘4 Vdc) -S\;$j 60
,,, !.~, “..$
,’,,, ...!}.,. 5
\..,$.
Collector-Emitter Saturation Voltag6 ..,,{$;:>J,!{>rt
VCE(~at)
*{Ic’= 8Adc, IB =800 mAdc) Vdc
t? —1.4
(lC=16Adc, lB=3.2Adc) ..$’+
,$’?
.~!:.,\ 4
*Base-Emitter On Voltage ‘‘k;,
*$), ‘~ VBE(on) 2.2 Vdc
(IC =BAdC,’VCE =4Vdc) $$$:ps,*,k:,
DYNAMIC CHARACTERISTICS ‘i:>+
.3!&,,:+
Magnitude of Common-Emitter .’..!. ,l>!~
i:’!> .**,*,
,,.$%;~~+ Ihfe I4—
Small-Signal, Short-Circuit, Forward Curregt~~~~~& Ratio
(lC=l A, f=50kHz) ‘,?.s\ ‘.*,
$.,,,.-~’
,-,,
*Small-Signal Current Gain
(lC=l Adc, VCE=4Vdc, f=lk
WITCHING CHARACTER ISTICSJ$’
Second Breakdown Collector ~g~y~~~}h Base Forward Biased lsib 1.5 —Adc
t=1 s (non-repetitive), V~&fF 1,$0 V, See Figure 12
IFIGURE 1-DC CURRENT GAIN FIGURE 2- DC CURRENT GAIN
300 1
1500C
200 300
.250c -7 “ 200
hU.1 1.U Z.u 3.U 5.U /.u lU Zu
Ic, COLLECTOR CURRENT (AMPSt
I
FIGURE 3–COLLECTOR SATURATION REGION
1 1 1 I11I11D\t i111111 I I 1
1 1 1I I 1 1 1 I
7.0 III I I I I I 1
. .
i0.4 I1
z0
~u~
>- Tc =25°C
>U o, I I 1 1
0.050.07 0.1 0.2 0.3 0.5 0,7 1.0 2,0 3.0 5.0
[B, BASE CURRENT (AMPSt
FIGURE 6- “ON” VOLTAGE
2. 2.0 / //
r
1. lR /j,1 ,
I! ! ! ! ! ! II I I I I VI 111/ II I
Ic, COLLECTOR CURRENT (AMPS) tc, COLLECTOR CURRENT (AMPSt
L@ MQTOROLA Semiconductor Products Inc.
FIGURE 7 – TURN-ON SWITCHING
TIMES -2N3773, 2N6609
1I1YI1I I -1 1
:0.2I11-- 1
I I I I I 1I1I1I I 1 1 1 1
%
F
-’ 0.1
0,07
0,05
0.03 I I I I I Ill II I l-h+ Llll I
0.02 -.
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7,0 10 20
Ic, COLLECTOR CURRENT (AMPS)
FIGURE 9-CURRENT-GAIN –BANDWIDTH
PRODUCT –2N3773, 2N6609
F!GURE 8 – TURN-OFF SWITCHING
TIMES –2N3773, 2N6609
0.1 ,,’
0.07
0.05
0.2 0.3 5,0 7.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
u
u
u
.
Tl 1I1I I I1 1 111,,J~ -,. I, -b,”” (“!.. I
w1111 0CURVES APPLY FOI
IPULSE TRAIN SHOWN
OUTY CYCLE, O=tl/t2 —REAOTIMEATtl
—TJ(pk) –T: =:!~k)le;l ,*
“!— n n II
,,1
RPOWER
I1<
p(;k) II I I
..-.
0.02 0,05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000
t, TIME (ins)
I
.
:1,-
,. .,.
,,
“,,,!. ‘,$,
FIGURE 12 – FORWARD BIAS SAFE OPERATING AREA
30, 1)~1r - \1r+!-_ II
r-- lous
‘},1,s’
‘There are two limitations on the powerhandling ability of aiii. \.J,” !*
~:~~$k~-~of Figure 12 is based on TJ(pk) =200°C; Tc is variable
transistor: average junction temperature and second breakdown. dep’MhQ on conditions. Second breakdown pulse limits are valid
Safe operating area curves indicate Ic –VCE limits of the tran-- fo$. d~$y cycles to 10% provided TJ(Pk) <200°C. At high case
sister that must be observed for reliable operation: i.e., tha tran -,+$ temperatures, thermal limitations will reduce the power that can
*..>.,.,:$$:.
sister must not be subjected to greater dissipation than the curv~ ‘~.ii be handled to values less than the limitations imposad bv second
‘i$\\
indicate, ,~?:)l;..s,:$+?,. breakdown (see AN-41 5A).
I\IIII I I
$ 60
<- ITut:””., xI I I I I
6 201 111IIII~II
@MOTOROLA Semiconductor Products jnc.
