8-pin SOIC Single-Channel Phototransistor Output Optocoupler MOC205M, MOC207M, MOC212M, MOC216M, MOC206M, MOC211M, MOC213M, MOC217M www.onsemi.com Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting. SOIC8 CASE 751DZ MARKING DIAGRAM Features ON XXX VXYYS * Closely Matched Current Transfer Ratios Minimum BVCEO of 70 V * * * * * Guaranteed MOC205M, MOC206M, MOC207M Minimum BVCEO of 30 V Guaranteed MOC211M, MOC212M, MOC213M, MOC216M, MOC217M Low LED Input Current Required for Easier Logic Interfacing MOC216M, MOC217M Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing Safety and Regulatory Approvals: UL1577, 2,500 VACRMS for 1 Minute DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage These are Pb-Free Devices XXX = Specific Device Code V = DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) X = Year Code YY = Work Week S = Assembly Package Code SCHEMATIC ANODE 1 8 N/C Applications * Feedback Control Circuits * Interfacing and Coupling Systems of Different Potentials and Impedances * General Purpose Switching Circuits * Monitor and Detection Circuits CATHODE 2 7 BASE N/C 3 6 COLLECTOR N/C 4 5 EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. (c) Semiconductor Components Industries, LLC, 2005 January, 2021 - Rev. 2 1 Publication Order Number: MOC217M/D MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M, MOC217M SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage <150 VRMS I-IV <300 VRMS Climatic Classification I-III 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Parameter VPR Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage 4000 Vpeak 4 mm External Creepage 4 mm DTI External Clearance Distance Through Insulation (Insulation Thickness) 0.4 mm TS Case Temperature (Note 1) 150 C IS,INPUT Input Current (Note 1) 200 mA PS,OUTPUT Output Power (Note 1) 300 mW Insulation Resistance at TS, VIO = 500 V (Note 1) >109 W Value Unit Storage Temperature -40 to +125 C TA Ambient Operating Temperature -40 to +100 C TJ Junction Temperature -40 to +125 C 260 for 10 seconds C RIO 1. Safety limit values - maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Rating TOTAL DEVICE TSTG TSOL PD Lead Solder Temperature Total Device Power Dissipation @ TA = 25C 240 mW Derate above 25C 2.94 mW/C Continuous Forward Current 60 mA Forward Current - Peak (PW = 100 ms, 120 pps) 1.0 A VR Reverse Voltage 6.0 V PD LED Power Dissipation @ TA = 25C 90 mW Derate above 25C 0.8 mW/C Continuous Collector Current 150 mA VCEO Collector-Emitter Voltage 30 V VECO Emitter-Collector Voltage 7 V Detector Power Dissipation @ TA = 25C 150 mW Derate above 25C 1.76 mW/C EMITTER IF IF (pk) DETECTOR IC PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M, MOC217M ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit EMITTER Input Forward Voltage VF IR CIN MOC216M, MOC217M IF = 1 mA - 1.07 1.3 V MOC205M, MOC206M, MOC207M MOC211M, MOC212M, MOC213M IF = 10 mA - 1.15 1.5 V VR = 6 V - 0.001 100 mA - 18 - pF VCE = 10 V, TA = 25C - 1.0 50 nA VCE = 10 V, TA = 100C - 1.0 - mA MOC205M, MOC206M, MOC207M IC = 100 mA 70 100 - V MOC211M, MOC212M, MOC213M, MOC216M, MOC217M IC = 100 mA 30 100 - V Reverse Leakage Current Input Capacitance DETECTOR ICEO1 Collector-Emitter Dark Current ICEO2 BVCEO Collector-Emitter Breakdown Voltage BVCBO Collector-Base Breakdown Voltage IC = 10 mA 70 120 - V BVECO Emitter-Collector Breakdown Voltage IE = 100 mA 7 10 - V Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 V - 7 - pF Collector-Output Current MOC205M IF = 10 mA, VCE = 10 V 40 - 80 % MOC206M IF = 10 mA, VCE = 10 V 63 - 125 % MOC207M IF = 10 mA, VCE = 10 V 100 - 200 % MOC211M IF = 10 mA, VCE = 10 V 20 - - % MOC212M IF = 10 mA, VCE = 10 V 50 - - % MOC213M IF = 10 mA, VCE = 10 V 100 - - % MOC216M IF = 1 mA, VCE = 5 V 50 - - % MOC217M IF = 1 mA, VCE = 5 V 100 - - % MOC205M, MOC206M, MOC207M MOC211M, MOC212M, MOC213M IC = 2 mA, IF = 10 mA - - 0.4 V MOC216M, MOC217M IC = 100 mA, IF = 1 mA - - 0.4 V CCE COUPLED CTR VCE(SAT) Collector-Emitter Saturation Voltage ton Turn-On Time IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 12) - 7.5 - ms toff Turn-Off Time IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 12) - 5.7 - ms tr Rise Time IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 12) - 3.2 - ms tf Fall Time IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 12) - 4.7 - ms 2500 - - VACRMS - 0.2 - pF 1011 - - W ISOLATION CHARACTERISTICS VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz RISO Isolation Resistance VI-O = 500 VDC, TA = 25C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M, MOC217M TYPICAL PERFORMANCE CURVES IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) VF, FORWARD VOLTAGE (V) 1.8 1.7 1.6 1.5 1.4 TA = -55C 1.3 1.2 TA = 25C 1.1 TA = 100C 1.0 1 10 100 10 VCE = 5 V NORMALIZED TO IF = 10 mA 1 0.1 0.01 0 1 IF, LED FORWARD CURRENT (mA) 1 NORMALIZED TO TA = 25 C -40 -20 0 Figure 2. Output Current vs. Input Current IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 -60 20 40 60 80 100 120 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IF = 10 mA NORMALIZED TO VCE = 5 V 0 TA, AMBIENT TEMPERATURE (C) 1 2 3 4 5 8 7 8 9 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 3. Output Current vs. Ambient Temperature Figure 4. Output Current vs. Collector-Emitter Voltage 10000 1.0 VCE = 10 V 0.9 1000 IF = 20 mA 0.8 NORMALIZED CTR ICEO, COLLECTOR-EMITER DARK CURRENT (nA) 100 IF, LED INPUT CURRENT (mA) Figure 1. LED Forward Voltage vs. Forward Current 0.1 -80 10 100 10 1 0.7 IF = 10 mA 0.6 IF = 5 mA 0.5 0.4 0.3 0.2 VCE = 5 V, TA = 25C NORMALIZED TO: CTR AT RBE = OPEN 0.1 0.1 0.0 0 20 40 60 80 100 10 TA, AMBIENT TEMPERATURE (C) 100 RBE, BASE RESISTANCE (kW) Figure 6. CTR vs. RBE (Unsaturated) Figure 5. Dark Current vs. Ambient Temperature www.onsemi.com 4 1000 MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M, MOC217M TYPICAL PERFORMANCE CURVES (continued) 4.0 1.0 0.9 IF = 20 mA 3.0 IF = 10 mA 0.7 NORMALIZED ton NORMALIZED CTR 0.8 VCC = 10 V IC = 2 mA RL = 100 W NORMALIZED TO: ton AT RBE = OPEN 3.5 0.6 IF = 5 mA 0.5 0.4 0.3 0.2 VCE = 0.3 V, TA = 25C NORMALIZED TO: CTR AT RBE = OPEN 0.1 0.0 10 100 2.5 2.0 1.5 1.0 0.5 0.0 0.01 1000 0.1 RBE, BASE RESISTANCE (kW) Figure 7. CTR vs. RBE (Saturated) 1.6 10 Figure 8. Normalized ton vs. RBE VCC = 10 V IC = 2 mA RL = 100 W NORMALIZED TO: toff AT RBE = OPEN 1.4 1.2 NORMALIZED toff 1 RBE, BASE RESISTANCE (MW) 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0.1 1 10 100 RBE, BASE RESISTANCE (MW) Figure 9. Normalized toff vs. RBE TEST CIRCUIT WAVEFORMS V CC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% R BE tr t on Adjust IF to produce IC = 2 mA Figure 10. Switching Time Test Circuit and Waveforms www.onsemi.com 5 tf t off 100 MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M, MOC217M REFLOW PROFILE 260 240 220 200 Max. Ramp-up Rate = 3C/S Max. Ramp-down Rate = 6C/S TP tP TL Tsmax 180 Temperature (C) 160 140 tL Preheat Area Tsmin ts 120 100 80 60 40 20 0 120 360 240 Time 25C to Peak Time (seconds) Figure 11. Reflow Profile Table 1. Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150C Temperature Maximum (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60 - 120 seconds Ramp-up Rate (tL to tP) 3C/second maximum Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60 - 150 seconds Peak Body Package Temperature 260C +0C / -5C Time (tP) within 5C of 260C 30 seconds Ramp-down Rate (TP to TL) 6C/second maximum Time 25C to Peak Temperature 8 minutes maximum ORDERING INFORMATION (Note 2) Part Number Package Shipping MOC205M Small Outline 8-Pin 100 Units / Tube MOC205R2M Small Outline 8-Pin 2500 / Tape & Reel MOC205VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option 100 Units / Tube MOC205R2VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2. The product orderable part number system listed in this table also applies to the MOC20XM and MOC21XM products. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751DZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13733G SOIC8 DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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