IGBT MODULE ( N series )
nnn Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)
nnn Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
nnn Outline Drawing
nnn Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage V
CES
600 V
Gate -Emitter Voltage V
GES
± 20 V
Continuous I
C
400
Collector 1ms I
C PULSE
800
Current Continuous -I
C
400
1ms -I
C PULSE
800
Max. Power Dissipation P
C
1500 W
Operating Temperature T
j
+150 °C
Storage Temperature T
stg
-40 ∼ + 1 2 5 °C
Isolation Voltage A.C. 1min. V
is
2500 V
Mounting *1 3.5
Terminals *2 4.5
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
• Electrical Characteristics ( at Tj=25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I
CES
V
GE
=0V V
CE
=600V 2.0 mA
Gate-Emitter Leackage Current I
GES
V
CE
=0V V
GE
=± 20V 30 µA
Gate-Emitter Threshold Voltage V
GE(th)
V
GE
=20V I
C
=400mA 4.5 7.5 V
Collector-Emitter Saturation Voltage V
CE(sat)
V
GE
=15V I
C
=400A 2.8 V
Input capacitance C
ies
V
GE
=0V 26400
Output capacitance C
oes
V
CE
=10V 5870 pF
Reverse Transfer capacitance C
res
f=1MHz 2670
t
ON
V
CC
=300V 0.6 1.2
t
r
I
C
=400A 0.2 0.6
t
OFF
V
GE
=± 15V 0.6 1.0
t
f
R
G
=4.7Ω 0.2 0.35
Diode Forward On-Voltage V
F
I
F
=400A V
GE
=0V 3.0 V
Reverse Recovery Time t
rr
I
F
=400A 350 ns
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R
th(j-c)
IGBT 0.085
Thermal Resistance R
th(j-c)
Diode 0.15 °C/W
R
th(c-f)
With Thermal Compound 0.025
nnn Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time µs
A
Nm
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0 200 400 600
10
100
1000
t
f
t
r
t
off
t
on
Switching time vs. Collector current
V
CC
=300V, R
G
=4.7Ω , V
GE
=15V, T
j=25°C
Switching time : t on , t r
, t off , t f
[nsec]
Collector current : I
C
[A]
0 1 2 3 4 5
0
200
400
600
800
10V
V
GE
=20V,15V, 12V
Collector-Emitter voltage : V
CE
[V]
Collector current : I C
[A]
8V
Collector current vs. Collector-Emitter voltage
T
j=125°C
0 1 2 3 4 5
0
200
400
600
800
Collector current vs. Collector-Emitter voltage
T
j=25°C
Collector current : I
C
[A]
Collector-Emitter voltage : V
CE
[V]
8V
10V
V
GE
=20V,15V,12V
0 5 10 15 20 25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
T
j=25°C
200A
400A
800A
I
C
=
Collector-Emitter voltage :V
CE
[V]
Gate-Emitter voltage : V
GE
[V]
0 5 10 15 20 25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
T
j=125°C
200A
400A
800A
I
C
=
Collector-Emitter voltage V CE [V]
Gate-Emitter voltage : V
GE
[V]
0 200 400 600
10
100
1000
Switching time vs. Collector current
V
CC
=300V, R
G
=4.7Ω , V
GE
=±15V, T
j=125°C
t
f
t
r
t
on
t
off
Switching time : t on , t r
, t off , t f
[nsec]
Collector current : I
C
[A]
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0,001 0,01 0,1 1
0,01
0,1 IGBT
Diode
Transient thermal resistance
Thermal resistance : Rth(j-c) [ßC/W]
Pulse width : PW [sec]
0 500 1000 1500 2000 2500
0
100
200
300
400
500
400V
300V
V
CC
=200V
0
5
10
15
20
25
Dynamic input characteristics
T
j=25°C
Collector-Emitter voltage : V CE [V]
Gate charge : Q
G [nC]
1 10
10
100
1000
5
t
f
t
r
t
off
t
on
Switching time vs. R
G
V
CC
=300V, I
C
=400A, V
GE
=±15V, T
j=25°C
Switching time : t on , t r
, t off , t f
[nsec]
Gate resistance : R
G
[Ω ]
0 1 2 3 4
0
200
400
600
800
1000
T
j=125°C 25°C
Forward current vs. Forward voltage
V
GE
=OV
Forward current : I F
[A]
Forward voltage : V
F [V]
0 200 400 600
10
100
I
rr 25°C
t
rr 25°C
t
rr 125°C
I
rr 125°C
Reverse recovery characteristics
t
rr , Irr vs. IF
Reverse recovery current : I rr [A]
Reverse recovery time : t rr [nsec]
Forward current : I
F [A]
0 100 200 300 400 500 600
0
500
1000
1500
2000
2500
3000
3500
4000
RBSOA (Repetitive pulse)
SCSOA
(non-repetitive pulse)
Reversed biased safe operating area
+V
GE
=15V, -V
GE
<15V, T
j<125°C, R
G
>4.7Ω
Collector current : Ic [A]
Collector-Emitter voltage : V
CE
[V]
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0 5 10 15 20 25 30 35
1
10
100
Cres
Coes
Cies
Capacitance vs. Collector-Emitter voltage
T
j=25°C
Capacitance : C ies , C oes , C res [nF]
Collector-Emitter Voltage : V
CE
[V]
0 200 400 600 800
0
10
20
30
40
E
rr 25°C
E
rr 125°C
Switching loss vs. Collector current
V
CC=300V, R
G
=4.7Ω , V
GE
=±15V
Switching loss : E
on
, E
off
, E
rr
[mJ/cycle]
Collector Current : I
C
[A]
E
on
25°C
E
on
125°C
E
off 25°C
E
off 125°C
Fuji Electric GmbH Fuji Electric (UK) Ltd.
Lyoner Straße 26 Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30
Fax.: 069 - 66 90 29 - 56 Fax.: 0181 - 233 11 60
Specification is subject to change without notice May 97
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