Ordering number : EN 1788A 28A1418/28C3648 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications Applications . Color TV audio output, converter, inverter Features . Adoption of FBET, MBIT processes - High breakdown voltage and large curren - Fast switching speed {capacity - Very small size marking it easy to provide high-density, small-sized hybrid ICs ( ):28A1418 Absolute Maximum Ratings at Ta = 28C unit Collector to Base Voltage Veno ()180 V Collector to Emitter Voltage Voro ()160 Vv Emitter to Base Voltage VEBO (-)6 V Collector Current Ic ()0.7 A Collector Current(Pulse) Icp ()L.5 A Collector Dissipation Po 500 mW Po Mounted on ceramic board (250mm2 X 0.8mm) 1.3 W Junction Temperature Tj 160 6 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta= 25C min typ max unit Collector Cutoff Current Icpo Vcop=()120V,ig=0 (-)0.1 pA Emitter Cutoff Current Igpo Vep=(-)4V Jc=0 {-)0.1 pA DC Current Gain hre(l) Vce=()5V,I=()100mA 100% 400% hpp(2) Vor =()5V Io =()10mA 90 Gain-Bandwidth Product fp Veg=()10V,JIe=()50mA 120 MHz C-E Saturation Voltage Vcrsat) Ie =()250mA, lp =(-)25mA 0.12 0.4 Vv (0.2) (0.5) Vv B-E Saturation Voltage VBE\sat) Io =()250mA,]p =(-)25mA (}0.85 ()1.2 V C-B Breakdown Voltage Veercpo Ico=()10pA,Ip=0 ()180 Vv C-E Breakdown Voltage VRceo Ic=()1mA,Rpg= ()160 Vv E-B Breakdown Voltage Veerespo Ig=()10pA,Ico=0 ()6 V Continued on next page. *: The 25A1418/25C3648 are classified by 100mA hpg as follows : 100 R 200 140 S 280 | 200 T 400 | Package Dimensions 2038 Marking 25A1418: AD (unit : mm) 2503648: CD 45 1.5 hpg rank: B,5,T ' a _ Switching Time Test Circuit { ] 7 i PWe 2g 1B kK pes 1%, an INPUT ~pe \ 3 Od -v 201p| =201g2= Ic= 300nA (For PNP, the polarity is reversed.) Unit (Resistance : 2, Capacitance : F) E: Emitter C: Collector B: Base SANYO: PCP (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters ome, Ueno, Taito-ku, TOKY 110 JAPAN 3277K1/2255MW,TS No.1788-1/4- 2$A1418/28C3648 Continued from preceding page. min typ max unit Output Capacitance Cob Vep=()10V f=1MHz B pF (11) pF Turn-on Time ton See specified Test Circuit. 50 ns (60) ns Storage Time tstg # 1000 ns % (900) ns Fall Time tr + 60 ns (60) ns Ic - VCE Ic - -600 800 c_- VCE From top 28A1418 From top 2803648 -700}- 200mA 700 HOOmA < 180mA S0mA | 600} 1S0mA 600 80mA '-500 500 c ao is -400 400 5 ae 0 5 300 300 = 200 200 o oO -100 100 Ip=O Io= 0 0 -200 ~ 400 600 - 1000 o 200 400 600 600 = 1000 Collector to Emitter Voltage, Vox mV Collector to Emitter Voltage,Vcg mV Ir - In - -B00 = CE 1000 ce 25A1418 28039468 - 700 E eo Be ; 7800 ' 2 2 = " 500 e 600 ye bs +400 a . = 400 7300 8 @ & = -200 = 8 (3 200 -100 o =0 6 =0 0 10-20 -30 -40 -5O -60 -70 -60 o wm 2 30 4 50 60 70 80 Collector to Emitter Voltage,Vog V Collector to Emitter Voltage, Vcog V 1000 Ic - VBE - VeE(sat) - Ic 28A1418/ 2803648 29414187 8 Voe= Sv | > 5 IcIp=! 4 p00 For PNP, minus sign is omitted, I For PNP, minus sign is omitted. a oO i = a 600 | [ m8 E a 8 5 Sff/2 re < 400 8 = as ~ 3 ALE 23 oS pr = 25 0.1 ae & 200 2a Sa ol 0 0.7 0.4 0.6 0.6 1.0 1,2 10 100 1000 ~. Base to Emitter Voltage,Va, V Collector Current, - mA No.1788-2/4= 258A 1418/25C3648 hee - I 100 DC Current Gain,hpp o 10 100 1000 Collector CurrentI mA fr - 1 28A1418 100 Gain-Bandwidth Product,fp MHz -10 -100 -1900 Collector Current, - mA Cob - VCB 28A14 184 2 48 f= |MHa For PNP, minus sign is omitted. 8 o4 lay 3 Wg Output Capacitance,c,, pF = o 10 100 Collector to Base Voltage, Von V ASO 254 14182803648 NG | KN 5 Ig * * A Ke o> SS KN N Nh wee mo ow ow ; Lr" { A aS RS \ a ON Ss 2| Single pulse _| PN Mounted on ceramic board | Ms 0.01}(250mm? xX 0.8mm) Ps 7}For PNP, minus sign is omitted. T_T 1.0 2 3 5 7 16 23 5 7 wo 2 3 Collector to Emitter Voltage,Vcg -V sa 4 Ta=25C Collector Currentic A ao 1000 8 DC Current Gain,hpg o 10 100 1000 Collector Currentig mA fT - I 2803648 8 Gain-Bandwidth Product,fp MHz 10 10 100 1000 Collector Current,[ mA Pc - Ta => = = a Collector Dissipation,P> W o o o oO 0 2000640 60 80 100 120 140 160 Ambient Temperature,Ta C No.1788-3/425A1418/25C3648 W@ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.1788-4/4