1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface Mounted Device (SMD) plastic
packages. The transistors in the SOT363 (SC-88) package are fully isolated internally.
1.2 Features
■Current gain matching
■Base-emitter voltage matching
■Common emitter configuration for SOT353 types
■Application-optimized pinout
1.3 Applications
■Current mirror
■Differential amplifier
1.4 Quick reference data
[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
PMP4501G; PMP4501Y
NPN/NPN matched double transistors
Rev. 02 — 14 February 2006 Product data sheet
Table 1: Product overview
Type number Package NPN/NPN hFE1/hFE2
0.98 complement PNP/PNP complement
Philips JEITA
PMP4501G SOT353 SC-88A PMP4201G PMP5501G
PMP4501Y SOT363 SC-88 PMP4201Y PMP5501Y
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - 45 V
ICcollector current - - 100 mA
hFE DC current gain VCE =5V;
IC=2mA 200 290 450
Per device
hFE1/hFE2 hFE matching VCE =5V;
IC=2mA [1] 0.95 1 -
VBE1 −VBE2 VBE matching VCE =5V;
IC=2mA [2] --2mV
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 2 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3: Pinning
Pin Description Simplified outline Symbol
SOT353
1 base TR1
2 emitter TR1, TR2
3 base TR2
4 collector TR2
5 collector TR1
SOT363
1 base TR1
2 base TR2
3 collector TR2
4 emitter TR2
5 emitter TR1
6 collector TR1
132
45
006aaa549
54
123
TR1 TR2
132
4
56
006aaa548
321
456
TR1
TR2
Table 4: Ordering information
Type number Package
Name Description Version
PMP4501G SC-88A plastic surface mounted package; 5 leads SOT353
PMP4501Y SC-88 plastic surface mounted package; 6 leads SOT363
Table 5: Marking codes
Type number Marking code[1]
PMP4501G R6*
PMP4501Y S8*
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 3 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V
ICcollector current - 100 mA
ICM peak collector current single pulse;
tp≤1ms - 200 mA
Ptot total power dissipation Tamb ≤25 °C[1] - 200 mW
Per device
Ptot total power dissipation Tamb ≤25 °C[1] - 300 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 416 K/W
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 4 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
7. Characteristics
Table 8: Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
ICBO collector-base cut-off
current VCB =30V;
IE=0A --15nA
VCB =30V;
IE=0A;
Tj= 150 °C
--5µA
IEBO emitter-base cut-off
current VEB =5V;
IC=0A - - 100 nA
hFE DC current gain VCE =5V;
IC=10µA- 250 -
VCE =5V;
IC=2mA 200 290 450
VCEsat collector-emitter
saturation voltage IC= 10 mA;
IB= 0.5 mA - 50 200 mV
IC= 100 mA;
IB=5mA - 200 400 mV
VBEsat base-emitter saturation
voltage IC= 10 mA;
IB= 0.5 mA [1] - 760 - mV
IC= 100 mA;
IB=5mA [1] - 910 - mV
VBE base-emitter voltage VCE =5V;
IC=2mA [2] 610 660 710 mV
VCE =5V;
IC=10mA [2] - - 770 mV
Cccollector capacitance VCB =10V;
IE=i
e=0A;
f=1MHz
- - 1.5 pF
Ceemitter capacitance VEB = 0.5 V;
IC=i
c=0A;
f=1MHz
-11-pF
fTtransition frequency VCE =5V;
IC= 10 mA;
f = 100 MHz
100 250 - MHz
NF noise figure VCE =5V;
IC= 0.2 mA;
RS=2kΩ;
f = 10 Hz to
15.7 kHz
- 2.8 - dB
VCE =5V;
IC= 0.2 mA;
RS=2kΩ;
f = 1 kHz;
B = 200 Hz
- 3.3 - dB
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 5 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
Per device
hFE1/hFE2 hFE matching VCE =5V;
IC=2mA [3] 0.95 1 -
VBE1 −VBE2 VBE matching VCE =5V;
IC=2mA [4] --2mV
Table 8: Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 6 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
Tamb =25°CV
CE =5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 1. Collector current as a function of
collector-emitter voltage; typical values Fig 2. DC current gain as a function of collector
current; typical values
IC/IB=20
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 3. Base-emitter saturation voltage as a function of
collector current; typical values Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa532
VCE (V)
0108462
0.08
0.12
0.04
0.16
0.20
IC
(A)
0
IB (mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25
006aaa533
200
400
600
hFE
0
IC (mA)
10−2103
102
10−1101
(3)
(1)
(2)
006aaa534
IC (mA)
10−1103
102
110
0.5
0.9
1.3
0.3
0.7
1.1
VBEsat
(V)
0.1
(1)
(2)
(3)
006aaa535
1
10−1
10
VCEsat
(V)
10−2
IC (mA)
10−1103
102
110
(1)
(2)
(3)
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 7 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
VCE =5V; T
amb =25°CV
CE =5V; T
amb =25°C
Fig 5. Base-emitter voltage as a function of collector
current; typical values Fig 6. Transition frequency as a function of collector
current; typical values
Tamb =25°C; f = 1 MHz Tamb =25°C; f = 1 MHz
Fig 7. Collector capacitance as a function of
collector-base voltage; typical values Fig 8. Emitter capacitance as a function of
emitter-base voltage; typical values
006aaa536
0.6
0.8
1
VBE
(V)
0.4
IC (mA)
10−1103
102
110
006aaa537
IC (mA)
110
2
10
102
103
fT
(MHz)
10
006aaa538
VCB (V)
0108462
2
1
3
5
4
Cc
(pF)
0
006aaa539
VEB (V)
0642
9
11
7
13
15
Ce
(pF)
5
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 8 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
8. Application information
9. Package outline
Fig 9. Current mirror Fig 10. Differential amplifier
006aaa523
VCC
lout
R1
TR2TR1
006aaa525
IN2IN1 TR2TR1
OUT2
V+
V−
OUT1
Fig 11. Package outline SOT353 (SC-88A) Fig 12. Package outline SOT363 (SC-88)
04-11-16Dimensions in mm
0.25
0.10
0.3
0.2
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
45
04-11-08Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 9 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
10. Packing information
[1] For further information and the availability of packing methods, see Section 17.
[2] T1: normal taping
[3] T2: reverse taping
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PMP4501G SOT353 4 mm pitch, 8 mm tape and reel -115 -135
PMP4501Y SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 10 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
11. Soldering
Dimensions in mm
Fig 13. Reflow soldering footprint SOT353 (SC-88A)
Dimensions in mm
Fig 14. Wave soldering footprint SOT353 (SC-88A)
MSA366
solder lands
solder resist
occupied area
solder paste
1.20
2.40
0.50
(4×)
0.40 0.90 2.10
0.50
(4×)
0.60
(1×)
2.35
2.65
solder lands
solder resist
occupied area
1.15
3.75
transport direction during soldering
1.000.30 4.00
0.704.50
2.652.25
2.70
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 11 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
Dimensions in mm
Fig 15. Reflow soldering footprint SOT363 (SC-88)
Dimensions in mm
Fig 16. Wave soldering footprint SOT363 (SC-88)
MSA432
solder lands
solder resist
occupied area
solder paste
1.20
2.40
0.50
(4×)
0.40
(2×)0.90 2.10
0.50
(4×)
0.60
(2×)
2.35
2.65
solder lands
solder resist
occupied area
1.15
3.75
transport direction during soldering
1.000.30 4.00
4.50
5.25
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 12 of 14
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
12. Revision history
Table 10: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
PMP4501G_Y_2 20060214 Product data sheet - - PMP4501G_Y_1
Modifications: •Table 1 “Product overview”: value indication for hFE1/hFE2 hFE matching amended
•Table 2 “Quick reference data”: value indication for hFE1/hFE2 hFE matching amended
•Table 8 “Characteristics”: value indication for hFE1/hFE2 hFE matching amended
PMP4501G_Y_1 20060202 Product data sheet - - -
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
PMP4501G_Y_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 14 February 2006 13 of 14
13. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
14. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
16. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
17. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 14 February 2006
Document number: PMP4501G_Y_2
Published in The Netherlands
Philips Semiconductors PMP4501G; PMP4501Y
NPN/NPN matched double transistors
18. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 13
14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
15 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
17 Contact information . . . . . . . . . . . . . . . . . . . . 13
