2N2222ACSM4
LAB
SEME
Prelim. 4/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
HIGH SPEED , MEDIUM PO WER, NPN
SWITCHING TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PA CKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically sealed surface mount version of
the popular 2N2222A for high reliability / space
applications requiring small size and low
weight devices.
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IB= 0)
ICCollector Current
PDTotal Device Dissipation
PDDerate above 50°C
Rja Thermal Resistance Junction to Ambient
Tstg Storage Temperature
75V
40V
6V
800mA
350mW
2.0mW / °C
350°C/W
–55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
LCC3 PACKAGE
Underside View
PAD 1 – Collector
PAD 2 – N/C PAD 3 – Emitter
PAD 4 – Base
1
23
4
5.59 ± 0.13
(0.22 ± 0.005)
0.23
(0.009) rad.
1.02 ± 0.20
(0.04 ± 0.008) 2.03 ± 0.20
(0.08 ± 0.008)
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
0.23
(0.009) min.
1.27 ± 0.05
(0.05 ± 0.002)
3.81 ± 0.13
(0.15 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
2N2222ACSM4
LAB
SEME
Prelim. 4/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
tdDelay Time
trRise Time
tsStorage Time
tfFall Time
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
IC= 10mA
IC= 10µA
IE= 10µAI
C= 0
IB= 0 VCE = 60V
IE= 0 VCB = 60V
TC= 125°C
IC= 0 VEB = 3V (off)
VCE = 60V VEB = 3V (off)
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 500mA IC= 50mA
IC= 0.1mA VCE = 10V
IC= 1mA VCE = 10V
IC= 10mA VCE = 10V
IC= 10mA VCE = 10V
IC= 150mA VCE = 10V
IC= 150mA VCE = 1V
IC= 500mA VCE = 10V
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
VCEO(sus)* Collector – Emitter Sustaining Voltage
V(BR)CBO* Collector – Base Breakdown Voltage
V(BR)EBO* Emitter – Base Breakdown Voltage
ICEX* Collector Cut-off Current (IC= 0)
ICBO* Collector – Base Cut-off Current
IEBO* Emitter Cut-off Current (IC= 0)
IBL* Base Current
VCE(sat)* Collector – Emitter Saturation Voltage
VBE(sat)* Base – Emitter Saturation Voltage
hFE* DC Current Gain TA= –55°C
40
75
610
10
10
10
20
0.3
1
0.6 1.2
2
35
50
75
35
100 300
50
40
V
V
V
nA
nA
µA
nA
nA
V
V
—
fTTransition Frequency
Cob Output Capacitance
Cib Input Capacitance
hfe Small Signal Current Gain
IC= 20mA VCE = 20V f = 100MHz
VCB = 10V IE= 0 f = 1.0MHz
VBE = 0.5V IC= 0 f = 1.0MHz
IC= 1mA VCE = 10V f = 1kHz
IC= 10mA VCE = 10V f = 1kHz
300 8
30
50 300
75 375
MHz
pF
pF
10
25
225
60
ns
ns
ns
ns
VCC = 30V VBE = 0.5V (off)
IC1 = 150mA IB1 = 15mA
VCC = 30V IC= 150mA
IB1 = IB2 = 15mA
fTis defined as the frequency at which hFE extrapolates to unity.
* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25°C unless otherwise stated)
