MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
1
Parameter
V
alue
Unit
V
DS
@
T
j,max
750
V
R
DS(on),max
0
.3
8
Ω
V
TH
,typ
3
V
I
D
11
A
Q
g,typ
34
nC
Order Code
Marking
T
emp. Range
Package
Packing
RoHS Status
MME
70R380PRH
70R38
0P
-55 ~ 150
℃
TO
-
263
(D2-P
AK)
Reel
Halogen Free
MME
70R380P
700V 0.38
Ω
N-channel MOSFET
Description
MME
70
R3
8
0P
is pow
er MOSFET
using magnachi
p
’
s advanced super
junction technol
ogy that ca
n
realize v
ery low on-resistance and ga
te charge. It
will
provide much high ef
ficiency by
using
optimized char
ge coupling technolo
gy
.
These user friendl
y devices give an
advantage of Low
EMI to
designers as w
ell as low
switching loss.
Features
Low Pow
er Loss by High Speed
Switching and
Low On-Resistance
100%
Av
alanche
T
es
ted
Green Packa
ge
–
Pb Free Plating, Hal
ogen Free
Key Parameters
Ordering Informatio
n
Applications
PFC Pow
er Supply Stages
Switching
Applications
Adapter
Motor Control
DC
–
DC Converters
Package & Internal
Circui
t
G
S
D
G
D
S
MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
2
Parameter
Symbol
Rating
Unit
Note
Drain
–
Source vol
tage
V
DSS
7
00
V
Gate
–
Source vol
tage
V
GSS
±
30
V
Continuous drain
current
I
D
11
A
T
C
=25
℃
7
A
T
C
=100
℃
Pulsed drain cu
rrent
(1)
I
DM
33
A
Power dissi
pation
P
D
101
W
Single - pulse aval
anche energy
E
AS
2
15
mJ
MOSFE
T dv/dt rugg
edness
dv/dt
50
V/ns
Diode dv
/dt ruggedness
(2
)
dv/dt
15
V/ns
Storage tempera
ture
T
stg
-55 ~150
℃
Maximum operatin
g junction
temperature
T
j
150
℃
1)
Pulse width t
P
limited by T
j,m
ax
2)
I
SD
≤
I
D
, V
DS peak
≤
V
(
BR)DSS
Parameter
Symbol
V
alue
Unit
Thermal resistance,
junction-case max
R
thjc
1.24
℃
/W
Thermal resistanc
e, junction-ambient
max
R
thja
62.5
℃
/W
Thermal Character
istics
Absolute Maximum
Rating (T
c
=2
5
℃
unless otherw
ise spec
ified)
MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
3
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Drain
–
Source
Breakdow
n voltage
V
(BR)D
SS
7
00
-
-
V
V
GS
= 0V
,
I
D
=0.25mA
Gate
Threshold V
oltage
V
GS
(th)
2
3
4
V
V
DS
= V
GS,
I
D
=0.25mA
Zero Gate V
oltage
Drain Current
I
D
SS
-
-
1
μ
A
V
DS
= 600V
,
V
GS
= 0V
Gate Leakage
Current
I
GSS
-
-
100
nA
V
GS
=
±3
0V
,
V
DS
=0V
Drain-Source On
State Resistance
R
DS(ON)
-
0.34
0.38
Ω
V
GS
= 10V
, I
D
=
3.
2
A
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Input Capacitance
C
iss
-
1061
-
pF
V
DS
= 25V
, V
GS
= 0V
,
f = 1.0MHz
Output Capacitance
C
oss
-
823
-
Reverse
T
ransfer Capacitance
C
rss
-
50
-
Effectiv
e Output Capaci
tance
Energy Related
(3)
C
o(er)
-
30
-
V
DS
= 0V to
56
0V
,
V
GS
= 0V
,f = 1.0M
Hz
T
urn On
Delay
Time
t
d(on)
-
20
-
ns
V
GS
= 10V
, R
G
= 25Ω,
V
DS
=
35
0V
, I
D
=
11
A
Rise
T
ime
t
r
-
38
-
T
urn O
ff Delay
T
ime
t
d(off)
-
101
-
Fall
T
ime
t
f
-
38
-
T
o
tal Gate Char
ge
Q
g
-
34
-
nC
V
GS
= 10V
, V
DS
=
56
0V
,
I
D
=
11
A
Gate
–
Source Cha
rge
Q
gs
-
6.7
-
Gate
–
Drain Char
ge
Q
gd
-
22.4
-
Gate Resistance
R
G
-
3.5
-
Ω
V
GS
= 0V
, f = 1.0M
Hz
3) C
o(er)
is a capacitance that gives the same stored energy as C
OSS
while V
DS
is
rising from 0V to 80% V
(BR)DSS
Static Characterist
ics (T
c
=25
℃
unless
otherwise specified
)
Dynamic Characteri
stics (T
c
=25
℃
unless otherw
ise specif
ied)
MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
4
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Continuous Diod
e Forward
Current
I
SD
-
-
1
1
A
Diode Forw
ard Voltage
V
SD
-
-
1.4
V
I
SD
=
11
A, VGS = 0V
Reverse Recov
ery Time
t
rr
-
385
-
ns
I
SD
=
11
A
di/dt = 100 A/μs
V
DD
= 100V
Reverse Recov
ery Charge
Q
rr
-
4.
8
-
μ
C
Reverse Recov
ery Current
I
rrm
-
25.0
-
A
Reverse Diode Ch
aracteristics (
T
c
=25
℃
unless otherwise specified)
MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
5
Characteristic Gra
ph
MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
6
MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
7
MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
8
T
est Circuit
V
DS
10V
1mA
DUT
100K
Ω
10V
Same type as DUT
+
-
V
DD
DUT
+
-
Same type as DUT
V
DS
+
-
I
S
R
g
10K
Ω
V
gs
±
15V
L
I
F
V
DD
DUT
+
-
I
D
V
DS
V
gs
t
p
R
L
V
DD
DUT
+
-
I
AS
V
DS
R
g
V
gs
t
p
L
10V
V
GS
Charge
Q
g
Q
gs
Q
gd
V
DS
V
GS
90%
10%
T
d(on)
t
r
t
on
T
d(off)
t
f
t
off
V
DD
t
p
t
AV
V
DS(t)
BV
DSS
I
AS
Rds(on) * I
AS
t
rr
t
a
t
b
I
FM
I
RM
d
i
/d
t
0.25 I
RM
0.75 I
RM
0.5 I
RM
V
R
V
RM(REC)
Fig15-1. Gate charge measurement circuit
Fig15-2. Gate charge waveform
Fig16-1. Diode reverse recovery test circuit
Fig16-1. Diode reverse recovery test waveform
Fig17-1. Switching time test circuit for resistive load
Fig17-2. Switching time waveform
Fig18-1. Unclamped inductive load test circuit
Fig18-2. Unclamped inductive waveform
R
g
25
Ω
MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
9
Physical Dimension
TO
-263 (D2P
A
K) , 3L
Dimensions are in mil
limeters, unles
s otherw
ise specified
MME
70R38
0P
Datasheet
Jul.
201
4 Revision 1.0
MagnaC
hip Semicondu
ctor Ltd
.
10
DISCLAIMER:
The
Products
are
not
des
igned
for
use
in
hostile
environments,
including,
w
ithout
limitation,
aircraft,
nuclear
p
ower
generation,
medical
appliances,
and
dev
ices
or
systems
in
w
hich
malfunction
of
any
Product
can
reasonably
be
expected
to
result
in
a
personal
i
njury.
Seller’s
customers
using
or
selling
Seller’s
products
for
use
in
such
applications do so at their own risk and agree to fully defend and indemnify
Se
lle
r.
MagnaC
hip reserves
the
right
to change
the s
pecification
s
and circuitry
without notice
at
any time.
MagnaC
hip does
not
consid
er
responsibili
ty
for
use
of
any
circuitry
other
than
circuitry
entirely
included
in
a
Ma
gnaChip
product.
is
a
registered
trade
mark
of
MagnaC
hip
Semiconductor
Ltd.
Suppliers Inquiry
Previous
Next
Link
Name *
Reason for Contact
General Inquiry
Place Order
Report Issue
Target Price (Option)
Email Address *
Message *
BOM / Attach Files (Option)
Maximum allowed file size is 10MB