2N2060 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * Matched, Dual Transistors * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2060J) * JANTX level (2N2060JX) * JANTXV level (2N2060JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0410 Reference document: MIL-PRF-19500/270 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C TC = 25C unless otherwise specified Symbol VCEO VCBO VEBO IC PT Derate linearly above 25C Power Dissipation, TC = 25C PT Derate linearly above 25C Operating Junction Temperature Storage Temperature Copyright 2002 Rev. G TJ TSTG Rating 60 100 7 500 540 one section 600 both sections 3.08 one section 3.48 both sections 1.5 one section 2.12 both sections 8.6 one section 12.1 both sections Unit Volts Volts Volts mA mW mW mW/C mW/C W W mW/C mW/C -65 to +200 C Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 1 2N2060 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Collector-Emitter Breakdown Voltage V(BR)CEO IC = 30 mA 60 Units Volts Collector-Emitter Breakdown Voltage V(BR)CER 80 Volts Collector-Base Cutoff Current ICBO1 ICBO2 ICBO3 IC = 10 mA, RBE = 10 VCB = 100 Volts VCB = 80 Volts VCB = 80 Volts, TA = 150C Collector-Emitter Cutoff Current ICEO VCE = xx Volts A nA A A Collector-Emitter Cutoff Current ICEX VCE = xx Volts, VEB = x Volts A Collector-Emitter Cutoff Current ICES VCE = xx Volts nA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 7 Volts VEB = 5 Volts On Characteristics 10 2 A nA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 DC Current Gain Base-Emitter Voltage Differential Base-Emitter Voltage Differential change with temperature Copyright 2002 Rev. G 10 2 10 |VBE1 - VBE2|1 |VBE1 - VBE2|2 |VBE1 - VBE2|1 |VBE1 - VBE2|2 Test Conditions IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 100 A, VCE = 5 Volts TA = -55C VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 1 mA VCE = 5 Volts, IC = 100 A TA = 25C and -55C VCE = 5 Volts, IC = 1 mA TA = 25C and +125C Min Typ 25 30 40 50 10 Max Units 75 90 120 150 5 .8 mVolts mVolts 1 Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2 2N2060 Silicon NPN Transistor Data Sheet Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO NF1 Noise Figure NF2 Short Circuit Input Impedance Short Circuit Input Impedance Open Circuit Output Admittance Copyright 2002 Rev. G hib hie hoe Test Conditions VCE = 10 Volts, IC = 50 mA, f = 20 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 300 A, f = 1 kHz, Rg = 510 VCE = 10 Volts, IC = 300 A, f = 10 kHz, Rg = 1 k VCB = 5V, IC = 1mA, f = 1kHz VCB = 5V, IC = 1mA, f = 1kHz VCB = 5V, IC = 1mA, f = 1kHz Min Typ Max 3 25 50 150 Units 15 pF 85 pF 8 dB 8 20 1 30 4 16 k mhos Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 3 of 3