2008. 9. 8 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS113
SILICON EPITAXIAL TYPE DIODE
Revision No : 3
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
·Small Package.
·Small Total Capacitance : CT=1.2pF(Max.).
·Low Series Resistance : rS=0.6Ω(Typ.).
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
A
B
D
E
1. CATHODE 1
2. CATHODE 2
3. ANODE
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
13
2
E
B
D
A
J
G
C
L
H
MM
NN
M0.42 0.10
N0.10 MIN
3
21
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage VR30 V
Forward Current IF50 mA
Junction Temperature Tj125 ℃
Storage Temperature Range Tstg -55～125 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VFIF=2mA - - 0.85 V
Reverse Current IRVR=15V - - 0.1 μA
Reverse Voltage VRIR=1μA30 - - V
Total Capacitance CTVR=6V, f=1MHz - 0.8 1.2 pF
Series Resistance rsIF=2mA, f=100MHz - 0.6 0.9 Ω
T3
Type Name
Marking
Lot No.
2008. 9. 8 2/2
KDS113
Revision No : 3
10
0
FORWARD VOLTAGE V (V)
I - VF
FORWARD CURRENT I (A)
F
TOTAL CAPACITANCE C (pF)
T
REVERSE VOLTAGE V (V)
R
RT
C - V
FORWARD CURRENT I (mA)
0.3
SERIES RESISTANCE r (Ω)
1
s
31020
r - I
sF
F
5
0.5
1
3
Ta=25 C
f=100MHz
1
0.3
0.5
1
3
35 10 20
f=1MHz
Ta=25 C
F
0.4 0.8 1.2 1.6 2.0 2.4
F
-4
10
-3
10
-2
10
-1
Ta=25 C
