DSSS 30-01AR IFAV = 2x30 A VRRM = 100 V V F = 0.63 V Power Schottky Rectifier dual diode VRSM VRRM V V 100 100 A Type C/A C ISOPLUS 247TM C A/C DSSS 30-01AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 155C; rectangular, d = 0.5 TC = 155C; rectangular, d = 0.5; per device IFSM 70 30 60 A A A TVJ = 45C; tp = 10 ms (50 Hz), sine 600 A EAS IAS = 15 A; L = 100 H; TVJ = 25C; non repetitive 11.3 mJ IAR VA =1.5 * VRRM typ.; f=10 kHz; repetitive 1.5 A 5000 V/s -55...+175 175 -55...+150 C C C 190 W 20...120 N 3000 V~ 6 g (dv/dt)cr TVJ TVJM Tstg Ptot TC = 25C FC mounting force with clip VISOL 50/60 Hz, RMS; t = 1 s Weight typical Symbol Conditions IR VR = VRRM; TVJ = 25C VR = VRRM; TVJ = 125C VF IF = 30 A; IF = 30 A; IF = 60 A; Features * International standard package * Very low VF * Extremely low switching losses * Low IRM-values * Isolated and UL registered E153432 Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses Dimensions see Outlines.pdf Characteristic Values typ. max. TVJ = 125C TVJ = 25C TVJ = 125C RthJC RthCH 0.25 2 20 mA mA 0.63 0.79 0.78 V V V 0.8 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. (c) 2005 IXYS All rights reserved 0528 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSSS 30-01AR 100 10000 100 mA TVJ=175C A IR IF pF 10 CT 150C 1 TVJ= 25C 125C 10 TVJ = 0.1 100C 175C 75C 150C 0.01 125C 25C 1 0.0 1000 50C 25C 100 0.001 0.2 0.4 0.6 0.8 V 1.0 0 20 40 60 0 V 80 20 40 VR VF Fig. 1 Max. forward voltage drop characteristics Fig. 2 Typ. reverse current IR versus reverse voltage 80 VR V Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 10000 60 80 60 W A 50 d = 0.5 60 A IFSM P(AV) 40 DC IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 30 40 20 20 10 1000 0 0 0 50 100 150 0 C 10 20 30 TC Fig. 4 Avg. forward current IF(AV) vs. case temperature TC 40 50 IF(AV) A 60 70 100 10 100 1000 s 10000 tP Fig. 5 Forward power loss characteristics 1 K/W D = 0.5 0.33 0.25 ZthJC 0.17 0.1 0.08 Single Pulse 0.01 1e-5 1e-4 DSSS 30-01AR 1e-3 1e-2 1e-1 1e+0 t Note: All curves are per diode s 1e+1 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2005 IXYS All rights reserved 0528 Fig. 6 Transient thermal impedance junction to case at various duty cycles 2-2