BST52
Datasheet Number: DS33022 Rev. 4 - 2 1 of 6
www.diodes.com December 2011
© Diodes Incorporated
A Product Line o
f
Diodes Incorporated
BST52
80V NPN SILICON PLANAR DARLINGTON TRANSISTOR
IN SOT89
Features
• BVCEO > 80V
• High current gain
• Max Continuous Current IC = 500mA
• Fast switching
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free, “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT89
• Moisture Sensitivity: Level 1 per J-STD-020
• UL Flammability Rating 94V-0
• Terminals: Matte Tin Finish
• Weight: 0.052 grams (Approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
BST52TA AS3 7 12 1,000
Notes: 1. No purposefully added lead.
2. Halogen and Antimony Free. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Top View
SOT89
Device symbol Top View
Pin-out
A
S3 = Product Type Marking Code
BST52
Datasheet Number: DS33022 Rev. 4 - 2 2 of 6
www.diodes.com December 2011
© Diodes Incorporated
A Product Line o
f
Diodes Incorporated
BST52
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 90 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 10 V
Continuous Collector Current IC 500 mA
Peak Pulse Current ICM 1.5 A
Base Current IB 100 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD1 W
Thermal Resistance, Junction to Ambient (Note 4) RθJA 125 °C/W
Thermal Resistance, Junction to Leads (Note 5) RθJL 8.66 °C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
Notes: 4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junctio n to solder-point (on the exposed collector pad).
Thermal Characteristics
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0 25mm x 25mm 1oz Cu
D era tin g Cu rve
Temperature (°C)
Ma x Power Di ssi p a tio n (W )
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120 25mm x 25mm 1oz Cu
Tamb = 25°C
Transient Thermal Imp ed anc e
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Therm al Resist a n ce (°C/ W )
Pu l se Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100 25mm x 25mm 1oz Cu
Tamb = 25°C
Single pulse
Pulse Power Dissipation
Pu lse Wid th (s)
Ma x Power Di ssi p a ti on (W )
BST52
Datasheet Number: DS33022 Rev. 4 - 2 3 of 6
www.diodes.com December 2011
© Diodes Incorporated
A Product Line o
f
Diodes Incorporated
BST52
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 90 - - V
IC = 10µA
Collector-Emitter Breakdown Voltage (Notes 6) BVCEO 80 - - V
IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 10 - - V
IE = 10µA
Collector Cutoff Current ICES - - 10 µA
VCE = 80V
Emitter Cutoff Current IEBO - - 10 µA
VEB = 8V
DC current transfer Static ratio (Notes 6) hFE 1000
2000 - - IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
Collector-Emitter Saturation Voltage (Notes 6) VCE(sat) - - 1.3
1.3 V IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA, TJ=150°C
Base-Emitter Saturation Voltage (Notes 6) VBE
(
sat
)
- - 1.9 V
IC = 500mA, IB = 0.5mA
Turn On Time tON - 0.4 - µs
IC = 500mA,
IBon = IBoff = 0.5mA Turn Off Time tOFF 1.5
Notes: 6. Measured under pulsed conditions. Pulse wi dth ≤ 300μs. Duty cycle ≤2%.
BST52
Datasheet Number: DS33022 Rev. 4 - 2 5 of 6
www.diodes.com December 2011
© Diodes Incorporated
A Product Line o
f
Diodes Incorporated
BST52
Package Outline Dimensions
Suggested Pad Layout
SOT89
Dim Min Max
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.43
D 4.40 4.60
D1 1.52 1.83
E 2.29 2.60
e 1.50 Typ
e1 3.00 Typ
H 3.94 4.25
L 0.89 1.20
All Dimensions in mm
Dimensions Value (in mm)
X 0.900
X1 1.733
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
e
D
H
L
A
C
E
8° (4X)
B1
B
D1
R0.200
e1
Y1
X1
Y2
Y
C
X (3 x)
Y3 Y4
X2 (2x)
BST52
Datasheet Number: DS33022 Rev. 4 - 2 6 of 6
www.diodes.com December 2011
© Diodes Incorporated
A Product Line o
f
Diodes Incorporated
BST52
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
