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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FSBB20CH60C Motion SPM® 3 Series
February 2016
1www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
FSBB20CH60C
Motion SPM® 3 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 20 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC Sub-
strate
• Built-in Bootstrap Diodes and Dedicated Vs Pins Sim-
plify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2500 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
•AN-9044 - Motion SPM® 3 Series Users Guide
General Description
FSBB20CH60C is an advanced Motion SPM® 3 module
providing a fully-featured, high-performance inverter out-
put stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown, and
fault reporting. The built-in, high-speed HVIC requires
only a single supply voltage and translates the incoming
logic-level gate inputs to the high-voltage, high-current
drive signals required to properly drive the module's
internal IGBTs. Separate negative IGBT terminals are
available for each phase to support the widest variety of
control algorithms.
Figure 1. Package Overview
Package Marking and Ordering Information
Device Device Marking Package Packing Type Quantity
FSBB20CH60C FSBB20CH60C SPMCC-027 Rail 10
2www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
FSBB20CH60C Motion SPM® 3 Series
Integrated Power Functions
• 600 V - 20 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 12 and 13.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
FSBB20CH60C Motion SPM® 3 Series
3www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Pin Descriptions
Pin Number Pin Name Pin Description
1 VCC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving
2COM Common Supply Ground
3IN(UL) Signal Input for Low-Side U-Phase
4IN(VL) Signal Input for Low-Side V-Phase
5IN(WL) Signal Input for Low-Side W-Phase
6 VFO Fault Output
7 CFOD Capacitor for Fault Output Duration Selection
8 CSC Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input
9IN(UH) Signal Input for High-Side U-Phase
10 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving
11 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving
12 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving
13 IN(VH) Signal Input for High-Side V-Phase
14 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving
15 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving
16 VS(V) High-Side Bias Voltage Ground for V Phase IGBT Driving
17 IN(WH) Signal Input for High-Side W-Phase
18 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving
19 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving
20 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving
21 NUNegative DC-Link Input for U-Phase
22 NVNegative DC-Link Input for V-Phase
23 NWNegative DC-Link Input for W-Phase
24 UOutput for U-Phase
25 VOutput for V-Phase
26 WOutput for W-Phase
27 PPositive DC-Link Input
FSBB20CH60C Motion SPM® 3 Series
4www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Internal Equivalent Circuit and Input/Output Pins
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
NU (21)
NV (22)
NW (23)
U (24)
V (25)
W (26)
P (27)
(20) VS(W)
(19) VB(W)
(16) VS(V)
(15) VB(V)
(8) CSC
(7) CFOD
(6) VFO
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
(2) COM
(1) VCC(L)
VCC
VB
OUT
COM
VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM
VS
IN
(18) VCC(H)
(17) IN(WH)
(14) VCC(H)
(13) IN(VH)
(12) VS(U)
(11) VB(U)
(10) VCC(H)
(9) IN(UH)
VSL
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
FSBB20CH60C Motion SPM® 3 Series
5www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol Parameter Conditions Rating Unit
VPN Supply Voltage Applied between P - NU, NV, NW450 V
VPN(Surge) Supply Voltage (Surge) Applied between P - NU, NV, NW500 V
VCES Collector - Emitter Voltage 600 V
± ICEach IGBT Collector Current TC = 25°C, TJ ≤ 150°C 20 A
± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ ≤ 150°C, Under 1 ms Pulse
Width
40 A
PCCollector Dissipation TC = 25°C per Chip 62 W
TJOperating Junction Temperature (2nd Note 1) - 40 ~ 150 °C
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 3 product is 150°C (at TC ≤ 125°C).
Control Part
Symbol Parameter Conditions Rating Unit
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V
VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20 V
VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3 ~ VCC + 0.3 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V
IFO Fault Output Current Sink Current at VFO pin 5mA
VSC Current-Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC + 0.3 V
Bootstrap Diode Part
Symbol Parameter Conditions Rating Unit
VRRM Maximum Repetitive Reverse Voltage 600 V
IFForward Current TC = 25°C, TJ ≤ 150°C 0.5 A
IFP Forward Current (Peak) TC = 25°C, TJ ≤ 150°C Under 1 ms Pulse
Width
2.0 A
TJOperating Junction Temperature -40 ~ 150 °C
Total System
Symbol Parameter Conditions Rating Unit
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 μs
400 V
TCModule Case Operation Temperature -40°C ≤ TJ ≤ 150°C, See Figure 2 -40 ~ 125 °C
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
2500 Vrms
Thermal Resistance
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-c)Q Junction to Case Thermal Resistance Inverter IGBT part (per 1 / 6 module) - - 2.0 °C / W
Rth(j-c)F Inverter FWDi part (per 1 / 6 module) - - 3.0 °C / W
2nd Notes:
2. For the measurement point of case temperature (TC), please refer to Figure 2.
FSBB20CH60C Motion SPM® 3 Series
6www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol Parameter Conditions Min. Typ. Max. Unit
VCE(SAT) Collector - Emitter Saturation
Voltage
VCC = VBS = 15 V
VIN = 5 V
IC = 20 A, TJ = 25°C - - 2.0 V
VFFWDi Forward Voltage VIN = 0 V IF = 20 A, TJ = 25°C - - 2.2 V
HS tON Switching Times VPN = 300 V, VCC = VBS = 15 V
IC = 20 A
VIN = 0 V ↔ 5 V, Inductive Load
(2nd Note 3)
-0.75 -μs
tC(ON) -0.2 -μs
tOFF -0.45 -μs
tC(OFF) -0.15 -μs
trr -0.1 -μs
LS tON VPN = 300 V, VCC = VBS = 15 V
IC = 20 A
VIN = 0 V ↔ 5 V, Inductive Load
(2nd Note 3)
-0.5 -μs
tC(ON) -0.3 -μs
tOFF -0.45 -μs
tC(OFF) -0.15 -μs
trr -0.1 -μs
ICES Collector - Emitter Leakage
Current
VCE = VCES - - 1 mA
2nd Notes:
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Control Part
Symbol Parameter Conditions Min. Typ. Max. Unit
IQCCL Quiescent VCC Supply
Current
VCC = 15 V
IN(UL, VL, WL) = 0 V
VCC(L) - COM - - 23 mA
IQCCH VCC = 15 V
IN(UH, VH, WH) = 0 V
VCC(H) - COM - - 600 μA
IQBS Quiescent VBS Supply
Current
VBS = 15 V
IN(UH, VH, WH) = 0 V
VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
- - 500 μA
VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 kΩ to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 4.7 kΩ to 5 V Pull-up - - 0.8 V
VSC(ref) Short-Circuit Current
Trip Level
VCC = 15 V (2nd Note 4) 0.45 0.50 0.55 V
TSD Over-Temperature
Protection
Temperature at LVIC -160 -°C
ΔTSD Over-Temperature
Protection Hysterisis
Temperature at LVIC - 5 - °C
UVCCD Supply Circuit
Under-Voltage Protection
Detection Level 10.7 11.9 13.0 V
UVCCR Reset Level 11.2 12.4 13.4 V
UVBSD Detection Level 10 11 12 V
UVBSR Reset Level 10.5 11.5 12.5 V
tFOD Fault-Out Pulse Width CFOD = 33 nF (2nd Note 5) 1.0 1.8 -ms
VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL),
IN(VL), IN(WL) - COM
2.8 - - V
VIN(OFF) OFF Threshold Voltage - - 0.8 V
2nd Notes:
4. Short-circuit protection is functioning only at the low-sides.
5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10-6 x tFOD [F]
VCE IC
VIN
tON
tC(ON)
VIN(ON) 10% IC10% VCE
90% IC
100% IC
trr
100% IC
0
VCE
IC
VIN
tOFF
tC(OFF)
VIN(OFF) 10% VCE 10% IC
(a) turn-on (b) turn-off
FSBB20CH60C Motion SPM® 3 Series
7www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Figure 4. Switching Time Definition
0246810121416182022
0
100
200
300
400
500
600
700
800
900
1000
1100
SWITCHING LOSS(ON) VS. COLLECTOR CURRENT
VCE=300V
VCC=15V
VIN=5V
TJ=25℃
TJ=150℃
SWITCHING LOSS, ESW(ON) [uJ]
COLLECTOR CURRENT, Ic [AMPERES]
0246810121416182022
0
100
200
300
400
500
600
700
SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT
VCE=300V
VCC=15V
VIN=5V
TJ=25℃
TJ=150℃
SWITCHING LOSS, ESW(OFF) [uJ]
COLLECTOR CURRENT, Ic [AMPERES]
Figure 5. Switching Loss Characteristics (Typical)
FSBB20CH60C Motion SPM® 3 Series
8www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Bootstrap Diode Part
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage IF = 0.1 A, TC = 25°C -2.5 - V
trr Reverse Recovery Time IF = 0.1 A, TC = 25°C -80 -ns
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built-in Bootstrap Diode VF-IF Characteristic
TC=25oC
IF [A]
VF [V]
Figure 6. Built-in Bootstrap Diode Characteristics
2nd Notes:
6. Built-in bootstrap diode includes around 15 Ω resistance characteristic.
Recommended Operating Conditions
Symbol Parameter Conditions Min. Typ. Max. Unit
VPN Supply Voltage Applied between P - NU, NV, NW-300 400 V
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 13.5 15.0 16.5 V
VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
13.0 15.0 18.5 V
dVCC / dt,
dVBS / dt
Control Supply Variation -1 - 1 V / μs
tdead Blanking Time for Preventing
Arm-Short
Each Input Signal 2 - - μs
fPWM PWM Input Signal -40°C ≤ TC ≤ 125°C, -40°C ≤ TJ ≤ 150°C - - 20 kHz
VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM
(Including Surge Voltage)
-4 4 V
FSBB20CH60C Motion SPM® 3 Series
9www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Mechanical Characteristics and Ratings
Parameter Conditions Min. Typ. Max. Unit
Mounting Torque Mounting Screw: M3 Recommended 0.62 N•m 0.51 0.62 0.80 N•m
Device Flatness See Figure 7 0 - +120 μm
Weight -15.00 - g
( + )
( + )
( + )
( + )
Figure 7. Flatness Measurement Position
FSBB20CH60C Motion SPM® 3 Series
10 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Time Charts of Protective Function
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVCCR
Protection
Circuit State SET RESET
UVCCD
a1
a3
a2
a4
a6
a5
a7
a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under-voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 8. Under-Voltage Protection (Low-Side)
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVBSR
Protection
Circuit State SET RESET
UVBSD
b1
b3
b2 b4
b6
b5
High-level (no fault output)
b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under-voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under-voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current.
Figure 9. Under-Voltage Protection (High-Side)
FSBB20CH60C Motion SPM® 3 Series
11 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short-circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor CFO.
c6 : Input “LOW”: IGBT OFF state.
c7 : Input “HIGH”: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.
c8 : IGBT OFF state.
Figure 10. Short-Circuit Protection (Low-Side Operation Only)
MCU
SPM
COM
+5 V
,,
IN(UL) IN(VL) IN(WL)
,,
IN(UH) IN(VH) IN(WH)
VFO
1 nF CPF = 1 nF
RPF = 4.7 ㏀
100 Ω
100 Ω
1 nF 1 nF
100 Ω
FSBB20CH60C Motion SPM® 3 Series
12 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Figure 11. Recommended MCU I/O Interface Circuit
15 V 22 µF
0.1 µF
1000 µF1 µF
One-Leg Diagram of
Motion SPM 3 Product
Inverter
Output
P
N
These values depend on PWM control algorithm.
Vcc
IN
COM
VB
HO
VS
Vcc
IN
COM
OUT
VSL
3rd Notes:
1. RC coupling at each input might change depending on the PWM control scheme in the application and the wiring impedance of the application’s printed circuit board. The input
signal section of the Motion SPM® 3 product integrates a 5 kΩ (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal
voltage drop at input terminal.
2. The logic input works with standard CMOS or LSTTL outputs.
Figure 12. Recommended Bootstrap Operation Circuit and Parameters
3rd Notes:
3. The ceramic capacitor placed between VCC - COM should be over 1 μF and mounted as close to the pins of the Motion SPM 3 product as possible.
Fault
+15 V
CBS CBSC
CBS CBSC
CBS CBSC
CSP15 CSPC15
CFOD
+5 V
RPF
CBPF
RS
M
Vdc
CDCS
Gating UH
Gating VH
Gating WH
Gating WL
Gating VL
Gating UL
CPF
M
C
U
RFU
RFV
RFW
RSU
RSV
RSW
CFU
CFV
CFW
W-Phase Current
V-Phase Current
U-Phase Current
RF
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
NU(21)
NV(22)
NW(23)
U (24)
V (25)
W (26)
P (27)
(20) VS(W )
(19) VB(W)
(16) VS(V )
(15) VB(V)
(8) CSC
(7) CFOD
(6) VFO
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
(2) COM
(1) VCC(L)
VCC
VB
OUT
COM
VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM
VS
IN
(18) VCC(H)
(17) IN(WH)
(14) VCC(H)
(13) IN(VH)
(12) VS(U)
(11) VB(U )
(10) VCC(H)
(9) IN(UH)
Input Signal for
Short-Circuit Protection
CSC
VSL
RS
RS
RS
RS
RS
RS
CPS
CPS
CPS
CPS CPS CPS
FSBB20CH60C Motion SPM® 3 Series
13 www.fairchildsemi.com©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
Figure 13. Typical Application Circuit
4th Notes:
1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3cm).
2. By virtue of integrating an application-specific type of HVIC inside the Motion SPM® 3 product, direct coupling to MCU terminals without any optocoupler or transformer isola-
tion is possible.
3. VFO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 kΩ resistance (please refer to Fig-
ure11).
4. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example: if CFOD = 33 nF, then tFO = 1.8 ms
(typ.)) Please refer to the 2nd note 5 for calculation method.
6. Input signal is active-HIGH type. There is a 5 kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be used to prevent input signal
oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. CPS should not be less than 1 nF (recommended RS = 100 Ω, CPS = 1 nF).
7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2.0 μs.
9. Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible.
10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 μF between the P & GND pins is recommended.
11. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
12. CSPC15 should be over 1 μF and mounted as close to the pins of the Motion SPM 3 product as possible.
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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