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FQP6N80C / FQPF6N80C N-Channel QFET(R) MOSFET 800 V, 5.5 A, 2.5 Description Features * 5.5 A, 800 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, ID = 2.75 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * Low Gate Charge (Typ. 21 nC) * Low Crss (Typ. 8 pF) * 100% Avalanche Tested D GD S G G D S TO-220 TO-220F S Absolute Maximum Ratings Symbol VDSS TC = 25C unless otherwise noted. Parameter ID Drain-Source Voltage - Continuous (TC = 25C) Drain Current IDM Drain Current FQP6N80C FQPF6N80C / FQPF6N80CT 800 - Continuous (TC = 100C) - Pulsed (Note 1) Unit V 5.5 5.5 * A 3.2 3.2 * A 22 22 * A VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 15.8 4.5 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL (Note 3) 30 V 680 mJ 158 1.27 - Derate above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. 51 0.41 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP6N80C FQPF6N80C / FQPF6N80CT Unit RJC Thermal Resistance, Junction-to-Case, Max. 0.79 2.45 C/W RCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 1 www.fairchildsemi.com FQP6N80C / FQPF6N80C -- N-Channel QFET(R) MOSFET December 2013 Part Number FQP6N80C Top Mark FQP6N80C Package TO-220 FQPF6N80C FQPF6N80C TO-220F Tube N/A N/A 50 units FQPF6N80CT FQPF6N80CT TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 800 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.97 VDS = 800 V, VGS = 0 V -- -- 10 A VDS = 640 V, TC = 125C -- -- 100 A IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.75 A -- 2.1 2.5 gFS Forward Transconductance VDS = 50 V, ID = 2.75 A -- 5.4 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1010 1310 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 90 115 pF -- 8 11 pF -- 26 60 ns ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 400 V, ID = 5.5 A, RG = 25 (Note 4) VDS = 640 V, ID = 5.5 A, VGS = 10 V (Note 4) -- 65 140 -- 47 105 ns -- 44 90 ns -- 21 30 nC -- 6 -- nC -- 9 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A ISM -- -- 22 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 615 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/s -- 5.4 -- C Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 42 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 5.5 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 2 www.fairchildsemi.com FQP6N80C / FQPF6N80C -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 -1 10 o 150 C 0 10 o -55 C o 25 C Notes : 1. 250 s Pulse Test 2. TC = 25 -1 -2 10 Notes : 1. VDS = 50V 2. 250 s Pulse Test -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 1 10 VGS = 10V IDR , Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 5 4 3 VGS = 20V 2 Note : TJ = 25 1 0 10 150 -1 0 3 6 9 10 12 0.2 0.4 0.6 Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1500 1.2 1.4 12 VDS = 160V 10 VGS, Gate-Source Voltage [V] Ciss 900 Coss 600 Notes ; 1. VGS = 0 V 2. f = 1 MHz 300 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1200 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Capacitance [pF] Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 Crss VDS = 400V VDS = 640V 8 6 4 2 Note : ID = 6.0A 0 -1 10 0 10 0 1 10 Figure 5. Capacitance Characteristics (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 0 5 10 15 20 25 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQP6N80C / FQPF6N80C -- N-Channel QFET(R) MOSFET ! (Continued) 1.2 3.0 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.0 -100 200 -50 0 100 150 200 o Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 2 102 10 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 100 s 1 ms 10 ms 100 ms 10 -1 10 Notes : 1. TC = 25 oC 10 100 s 1 ms 10 ms 100 ms 0 DC -1 DC 0 10 10 2. TJ = 150 oC 3. Single Pulse 2. TJ = 150 C 3. Single Pulse 10-2 100 -2 0 1 2 10 3 10 Notes : 1. TC = 25 oC o 10 10 s 1 ID, Drain Current [A] 1 10 10 50 TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] ID, Drain Current [A] Notes : 1. VGS = 10 V 2. ID = 3.0 A 0.5 10 101 102 103 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-2. Maximum Safe Operating Area for FQPF6N80C Figure 9-1. Maximum Safe Operating Area for FQP6N80C 6 ID, Drain Current [A] 5 4 3 2 1 0 25 50 75 100 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 4 www.fairchildsemi.com FQP6N80C / FQPF6N80C -- N-Channel QFET(R) MOSFET Typical Characteristics ZJC(t), Thermal Response [oC/W] 10 FQP6N80C / FQPF6N80C -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 0 D = 0 .5 0 .2 10 -1 N o te s : 1 . Z J C( t ) = 0 . 7 9 / W M a x . 2 . D u ty F a c t o r , D = t 1 / t 2 3 . T J M - T C = P D M * Z J C( t ) 0 .1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 s in g le p u ls e t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] ZJC(t), Thermal Response [oC/W] Figure 11-1. Transient Thermal Response Curve for FQP6N80C 10 D = 0 .5 0 0 .2 N o te s : 1 . Z J C( t ) = 2 . 4 5 / W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T J M - T C = P D M * Z J C( t ) 0 .1 10 0 .0 5 -1 0 .0 2 PDM 0 .0 1 10 10 t1 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF6N80C (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 5 www.fairchildsemi.com FQP6N80C / FQPF6N80C -- N-Channel QFET(R) MOSFET 200nF 12V VGS Same Type as DUT 50K Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 6 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 7 www.fairchildsemi.com FQP6N80C / FQPF6N80C -- N-Channel QFET(R) MOSFET DUT FQP6N80C / FQPF6N80C -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 8 www.fairchildsemi.com FQP6N80C / FQPF6N80C -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. 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