INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRGP4068DPbF
IRGP4068D-EPbF
1www.irf.com
07/27/09
E
G
n-channel
C
VCES = 600V
IC = 48A, TC = 100°C
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
•5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
Gate Collector Emitter
TO-247AC
IRGP4068DPbF
TO-247AD
IRGP4068D-EPbF
GCE
C
GCE
C
PD - 97250C
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 96
I
C
@ T
C
= 100°C Continuous Collector Current 48
I
CM
Pulse Collector Current, V
GE
= 15V 144
I
LM
Clamped Inductive Load Current, V
GE
= 20V
c
192 A
I
F
@ T
C
= 160°C Diode Continous Forward Current
g
8.0
I
FSM
Diode Non Repetitive Peak Surge Current @ T
J
= 25°C
dg
175
I
FRM
@Tc = 100°C Diode Repetitive Peak Forward Current at tp=10μs
df
100
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 330 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 170
T
J
Operating Junction and -55 to +175
T
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W
R
θJC
(Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.0
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
IRGP4068DPbF/IRGP4068D-EPbF
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Notes:
VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
fsw = 20KHz, refer to figure 19.
Sinusoidal half wave, t=10ms.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 100μA
e
CT6
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
—0.30—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C)
CT6
—1.652.14 I
C
= 48A, V
GE
= 15V, T
J
= 25°C
4,5,6
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V I
C
= 48A, V
GE
= 15V, T
J
= 150°C
8,9,10
—2.05— I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 1.4mA
8,9,10,11,20
gfe Forward Transconductance — 32 — S V
CE
= 50V, I
C
= 48A, PW = 80μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 150 μAV
GE
= 0V, V
CE
= 600V
— 450 1000 V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 0.96 1.05 V I
F
= 8.0A
7
—0.810.86 I
F
= 8.0A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 95 140 I
C
= 48A
18
Q
ge
Gate-to-Emitter Charge (turn-on) — 28 42 nC V
GE
= 15V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 35 53 V
CC
= 400V
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 1275 1481 μJR
G
= 10
Ω
, L = 200μH,T
J
= 25°C
CT4
Energy losses include tail
t
d(off)
Turn-Off delay time — 145 176 ns I
C
= 48A, V
CC
= 400V, V
GE
= 15V
t
f
Fall time — 35 46 R
G
= 10Ω, L = 200μH,T
J
= 25°C
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 1585 — μJR
G
= 10Ω, L = 200μH,T
J
= 175°C
CT4
Energy losses include tail
t
d(off)
Turn-Off delay time — 165 — ns I
C
= 48A, V
CC
= 400V, V
GE
= 15V
WF1
t
f
Fall time — 45 — R
G
=10
Ω
, L=200μH, T
J
= 175°C
C
ies
Input Capacitance — 3025 — V
GE
= 0V
17
C
oes
Output Capacitance — 245 — pF V
CC
= 30V
C
res
Reverse Transfer Capacitance — 90 — f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp =600V
CT2
Rg = 10
Ω
, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsV
CC
= 400V, Vp =600V
16, CT3
Rg = 10
Ω
, V
GE
= +15V to 0V
WF2
Conditions
IRGP4068DPbF/IRGP4068D-EPbF
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
025 50 75 100 125 150 175 200
TC (°C)
0
10
20
30
40
50
60
70
80
90
100
IC (A)
0 25 50 75 100 125 150 175 200
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
Fig. 3 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IRGP4068DPbF/IRGP4068D-EPbF
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Fig. 7 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 10 - Typical VCE vs. VGE
TJ = 175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
0 5 10 15
VGE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
TJ = 25°C
TJ = 175°C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
0 255075100
IC (A)
0
1000
2000
3000
4000
5000
6000
Energy (μJ)
EOFF
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Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
020 40 60 80 100
IC (A)
10
100
1000
Swiching Time (ns)
tdOFF
tF
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
0 25 50 75 100 125
Rg (Ω)
1000
1500
2000
2500
3000
3500
4000
4500
5000
Energy (μJ)
EOFF
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
025 50 75 100 125
RG (Ω)
10
100
1000
Swiching Time (ns)
tdOFF
tF
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
0 255075100
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 300V
VCES
= 400V
8 1012141618
VGE (V)
4
6
8
10
12
14
16
18
Time (μs)
50
100
150
200
250
300
350
400
Current (A)
Isc
Tsc
Fig. 16 - VGE vs. Short Circuit
VCC = 400V; TC = 25°C
IRGP4068DPbF/IRGP4068D-EPbF
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Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 22. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 19. Maximum Diode Repetitive Forward
Peak Current vs. Case Temperature
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.0248 0.000014
0.0652 0.000050
0.1537 0.001041
0.2065 0.013663
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.0400 0.000030
0.7532 0.000717
0.8317 0.004860
0.3766 0.036590
25 50 75 100 125 150 175
Case Temperature (°C)
0
20
40
60
80
100
120
140
160
Repetitive Peak Current (A)
D=0.5
D=0.2
D=0.1
Square Pulse,
f = 20KHz
D = t/T
t
T = 50us
Fig 20. Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
25 50 75 100 125 150 175
TJ , Temperature (°C)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VGE(th),
IC = 1.4mA
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1K
VC C
DUT
0
L
L
Rg
80 V DUT
480V
DC
4x
DUT
360V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
C f orce
400μH
G f orce DUT
D1 10K
C sense
0.0075μ
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
L
Rg
VCC
DIODE CLAMP /
DUT
DUT /
DRIVER
- 5V
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Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-100
0
100
200
300
400
500
600
700
-0.40 0.10 0.60 1.10
Time(µs)
V
CE
(V)
-20
0
20
40
60
80
100
120
140
E
OFF
Loss
5% V
CE
5% I
CE
90% I
CE
tf
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (µS)
V
CE
(V)
-100
0
100
200
300
400
500
600
I
CE
(A )
V
CE
I
CE
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TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRGP4068DPbF/IRGP4068D-EPbF
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TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/09
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/