1
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
1
2
3
4
SOT-223-4
Drain
Pin 2, 4
Gate
Pin 1
Source
Pin 3
MOSFET
OptiMOSTMSmallSignalTransistor,-60V
Features
•P-Channel
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•LogicLevel
•Enhancementmode
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter Value Unit
VDS -60 V
RDS(on),max 750 mΩ
ID-1.1 A
Type/OrderingCode Package Marking RelatedLinks
ISP75DP06LM PG-SOT223 75DP06LM -
2
OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID- - -1.1 A VGS=-10V,TA=25°C,
RTHJA=70°C/W
Continuous drain current1) ID
-
-
-
-
-
-
-0.7
-1.0
-0.6
A
VGS=-10V,TA=100°C,
RTHJA=70°C/W
VGS=-4.5V,TA=25°C,
RTHJA=70°C/W
VGS=-4.5V,TA=100°C,
RTHJA=70°C/W
Pulsed drain current2) ID,pulse - - -4.4 A TA=25°C
Avalanche energy, single pulse3) EAS - - 36 mJ ID=-1.1A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot -
-
-
-
4.2
1.8 WTS=25°C
TA=25°C,RTHJA=70°C/W1)
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1:
55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - soldering
point RthJS - - 30 °C/W -
Device on PCB,
6 cm² cooling area1) RthJA - - 70 °C/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
4
OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS -60 - - V VGS=0V,ID=-250µA
Gate threshold voltage VGS(th) -1 -1.5 -2 V VDS=VGS,ID=-77µA
Zero gate voltage drain current IDSS -
-
-0.1
-10
-1
-100 µA VDS=-60V,VGS=0V,Tj=25°C
VDS=-60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - -10 -100 nA VGS=-20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
621
748
750
1000 mΩVGS=-10V,ID=-1.1A
VGS=-4.5V,ID=-1A
Gate resistance RG- 75 - Ω-
Transconductance gfs - 1.8 - S |VDS|≥2|ID|RDS(on)max,ID=-1.1A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 120 - pF VGS=0V,VDS=-30V,f=1MHz
Output capacitance Coss - 19 - pF VGS=0V,VDS=-30V,f=1MHz
Reverse transfer capacitance Crss - 5 - pF VGS=0V,VDS=-30V,f=1MHz
Turn-on delay time td(on) - 3 - ns VDD=-30V,VGS=-10V,ID=-1.1A,
RG,ext=1.6Ω
Rise time tr- 5 - ns VDD=-30V,VGS=-10V,ID=-1.1A,
RG,ext=1.6Ω
Turn-off delay time td(off) - 40 - ns VDD=-30V,VGS=-10V,ID=-1.1A,
RG,ext=1.6Ω
Fall time tf- 14 - ns VDD=-30V,VGS=-10V,ID=-1.1A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - -0.4 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V
Gate charge at threshold Qg(th) - -0.2 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V
Gate to drain charge Qgd - -1.1 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V
Switching charge Qsw - -1.3 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V
Gate charge total Qg- -4.0 - nC VDD=-30V,ID=-1.1A,VGS=0to-10V
Gate plateau voltage Vplateau - -3.4 - V VDD=-30V,ID=-1.1A,VGS=0to-10V
Output charge Qoss - -1.3 - nC VDD=-30V,VGS=0V
1) See ″Gate charge waveforms″ for parameter definition
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OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - -1.1 A TA=25°C
Diode pulse current IS,pulse - - -4.4 A TA=25°C
Diode forward voltage VSD - -0.9 -1.2 V VGS=0V,IF=-1.1A,Tj=25°C
Reverse recovery time trr - 23 - ns VR=-30V,IF=-1.1A,diF/dt=-100A/µs
Reverse recovery charge Qrr - -27 - nC VR=-30V,IF=-1.1A,diF/dt=-100A/µs
6
OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TA[°C]
Ptot[W]
0 20 40 60 80 100 120 140 160
0
1
2
Ptot=f(TA)
Diagram2:Draincurrent
TA[°C]
-ID[A]
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
ID=f(TA);|VGS|≥10V
Diagram3:Safeoperatingarea
-VDS[V]
-ID[A]
10-1 100101102
10-3
10-2
10-1
100
101
1 µs
100 µs
1 ms
10 ms
100 ms
DC
ID=f(VDS);TA=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJA[K/W]
10-5 10-4 10-3 10-2 10-1 100101
10-1
100
101
102
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJA=f(tp);parameter:D=tp/T
7
OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
Diagram5:Typ.outputcharacteristics
-VDS[V]
-ID[A]
012345
0
1
2
3
4
5
-10 V
-5 V
-4.5 V
-4 V
-3.5 V
-3 V
-2.8 V
ID=f(VDS),Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
-ID[A]
RDS(on)[mΩ]
0.0 0.4 0.8 1.2 1.6 2.0 2.4
500
750
1000
1250
1500
-2.8 V -3 V
-3.5 V
-4 V
-4.5 V
-5 V
-10 V
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
-VGS[V]
-ID[A]
12345
0
1
2
3
150 °C
25 °C
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.drain-sourceonresistance
-VGS[V]
RDS(on)[mΩ]
4 5 6 7 8 9 10
0
250
500
750
1000
1250
1500
1750
2000
150 °C
25 °C
RDS(on)=f(VGS),ID=-1.1A;parameter:Tj
8
OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
Diagram9:Normalizeddrain-sourceonresistance
Tj[°C]
RDS(on)(normalizedto25°C)
-75 -50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
RDS(on)=f(Tj),ID=-1.1A,VGS=-10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
-VGS(th)[V]
-75 -50 -25 0 25 50 75 100 125 150
1.00
1.25
1.50
1.75
2.00
-77 µA
-770 µA
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
-VDS[V]
C[pF]
0 10 20 30 40 50 60
100
101
102
103
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
-VSD[V]
-IF[A]
0.00 0.25 0.50 0.75 1.00 1.25 1.50
10-2
10-1
100
101
25 °C
25 °C, max
150 °C
150 °C, max
IF=f(VSD);parameter:Tj
9
OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
-IAV[A]
100101102103
10-2
10-1
100
101
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
Diagram14:Typ.gatecharge
-Qgate[nC]
-VGS[V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
2
4
6
8
10
-12 V
-30 V
-48 V
VGS=f(Qgate),ID=-1.1Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
-VBR(DSS)[V]
-75 -50 -25 0 25 50 75 100 125 150
55
60
65
70
VBR(DSS)=f(Tj);ID=-250µA
Diagram Gate charge waveforms
10
OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
5PackageOutlines
Figure1OutlinePG-SOT223,dimensionsinmm/inches
11
OptiMOSTMSmallSignalTransistor,-60V
ISP75DP06LM
Rev.2.0,2019-03-25Final Data Sheet
RevisionHistory
ISP75DP06LM
Revision:2019-03-25,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2019-03-25 Release of final version
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